Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks

Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein,...

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Autores: Aseev, Pavel|||0000-0003-0343-9302, Fursina, Alexandra, Boekhout, Frenk, Krizek, Filip, Sestoft, Joachim E., Borsoi, Francesco|||0000-0001-9398-7614, Heedt, Sebastian, Wang, Guanzhong, Binci, Luca, Martí-Sánchez, Sara|||0000-0003-4283-1489, Swoboda, Timm, Koops, René, Uccelli, Emanuele, Arbiol i Cobos, Jordi|||0000-0002-0695-1726, Krogstrup, Peter|||0000-0002-1930-8553, Kouwenhoven, Leo P., Caroff, Philippe
Tipo de recurso: artículo
Fecha de publicación:2019
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:204903
Acceso en línea:https://ddd.uab.cat/record/204903
https://dx.doi.org/urn:doi:10.1021/acs.nanolett.8b03733
Access Level:acceso abierto
Palabra clave:Selective-area growth
Epitaxy
Selectivity
III-V nanowire
InAs
GaAs Molecular beam epitaxy
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spelling Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire NetworksAseev, Pavel|||0000-0003-0343-9302Fursina, AlexandraBoekhout, FrenkKrizek, FilipSestoft, Joachim E.Borsoi, Francesco|||0000-0001-9398-7614Heedt, SebastianWang, GuanzhongBinci, LucaMartí-Sánchez, Sara|||0000-0003-4283-1489Swoboda, TimmKoops, RenéUccelli, EmanueleArbiol i Cobos, Jordi|||0000-0002-0695-1726Krogstrup, Peter|||0000-0002-1930-8553Kouwenhoven, Leo P.Caroff, PhilippeSelective-area growthEpitaxySelectivityIII-V nanowireInAsGaAs Molecular beam epitaxySelective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques that unambiguously establish the parameter space window resulting in selective III-V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III-V surface and the amorphous mask area is identified as the primary mechanism governing selectivity. The broad applicability of this method is demonstrated by the successful realization of high-quality InAs and GaAs nanowire networks on GaAs, InP, and InAs substrates of both (001) and (111)B orientations as well as homoepitaxial InSb nanowire networks. Finally, phase coherence in Aharonov-Bohm ring experiments validates the potential of these crystals for nanoelectronics and quantum transport applications. This work should enable faster and better nanoscale crystal engineering over a range of compound semiconductors for improved device performance. 22019-01-0120192019-01-01Articlehttp://purl.org/coar/resource_type/c_6501VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/204903https://dx.doi.org/urn:doi:10.1021/acs.nanolett.8b03733reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengAgència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2017/SGR-327Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2013-0295open accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.https://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2049032026-06-06T12:50:31Z
dc.title.none.fl_str_mv Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
title Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
spellingShingle Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
Aseev, Pavel|||0000-0003-0343-9302
Selective-area growth
Epitaxy
Selectivity
III-V nanowire
InAs
GaAs Molecular beam epitaxy
title_short Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
title_full Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
title_fullStr Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
title_full_unstemmed Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
title_sort Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks
dc.creator.none.fl_str_mv Aseev, Pavel|||0000-0003-0343-9302
Fursina, Alexandra
Boekhout, Frenk
Krizek, Filip
Sestoft, Joachim E.
Borsoi, Francesco|||0000-0001-9398-7614
Heedt, Sebastian
Wang, Guanzhong
Binci, Luca
Martí-Sánchez, Sara|||0000-0003-4283-1489
Swoboda, Timm
Koops, René
Uccelli, Emanuele
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Krogstrup, Peter|||0000-0002-1930-8553
Kouwenhoven, Leo P.
Caroff, Philippe
author Aseev, Pavel|||0000-0003-0343-9302
author_facet Aseev, Pavel|||0000-0003-0343-9302
Fursina, Alexandra
Boekhout, Frenk
Krizek, Filip
Sestoft, Joachim E.
Borsoi, Francesco|||0000-0001-9398-7614
Heedt, Sebastian
Wang, Guanzhong
Binci, Luca
Martí-Sánchez, Sara|||0000-0003-4283-1489
Swoboda, Timm
Koops, René
Uccelli, Emanuele
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Krogstrup, Peter|||0000-0002-1930-8553
Kouwenhoven, Leo P.
Caroff, Philippe
author_role author
author2 Fursina, Alexandra
Boekhout, Frenk
Krizek, Filip
Sestoft, Joachim E.
Borsoi, Francesco|||0000-0001-9398-7614
Heedt, Sebastian
Wang, Guanzhong
Binci, Luca
Martí-Sánchez, Sara|||0000-0003-4283-1489
Swoboda, Timm
Koops, René
Uccelli, Emanuele
Arbiol i Cobos, Jordi|||0000-0002-0695-1726
Krogstrup, Peter|||0000-0002-1930-8553
Kouwenhoven, Leo P.
Caroff, Philippe
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Selective-area growth
Epitaxy
Selectivity
III-V nanowire
InAs
GaAs Molecular beam epitaxy
topic Selective-area growth
Epitaxy
Selectivity
III-V nanowire
InAs
GaAs Molecular beam epitaxy
description Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. Herein, we present a set of experimental techniques that unambiguously establish the parameter space window resulting in selective III-V nanowire networks growth by molecular beam epitaxy. Selectivity maps are constructed for both GaAs and InAs compounds based on in situ characterization of growth kinetics on GaAs(001) substrates, where the difference in group III adatom desorption rates between the III-V surface and the amorphous mask area is identified as the primary mechanism governing selectivity. The broad applicability of this method is demonstrated by the successful realization of high-quality InAs and GaAs nanowire networks on GaAs, InP, and InAs substrates of both (001) and (111)B orientations as well as homoepitaxial InSb nanowire networks. Finally, phase coherence in Aharonov-Bohm ring experiments validates the potential of these crystals for nanoelectronics and quantum transport applications. This work should enable faster and better nanoscale crystal engineering over a range of compound semiconductors for improved device performance.
publishDate 2019
dc.date.none.fl_str_mv 2
2019-01-01
2019
2019-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/204903
https://dx.doi.org/urn:doi:10.1021/acs.nanolett.8b03733
url https://ddd.uab.cat/record/204903
https://dx.doi.org/urn:doi:10.1021/acs.nanolett.8b03733
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agència de Gestió d'Ajuts Universitaris i de Recerca https://doi.org/10.13039/501100003030 2017/SGR-327
Ministerio de Economía y Competitividad https://doi.org/10.13039/501100003329 SEV-2013-0295
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
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