Optomechanical Cavities Based on Epitaxial GaP on Nominally (001)-Oriented Si
[EN] Gallium Phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectric properties. Usually, GaP is grown epitaxially on III-V substrates to keep its crystallinity and later transferred...
| Autores: | , , , , , , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2024 |
| País: | España |
| Recursos: | Universitat Politècnica de València (UPV) |
| Repositorio: | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| Idioma: | inglés |
| OAI Identifier: | oai:riunet.upv.es:10251/214711 |
| Acesso em linha: | https://riunet.upv.es/handle/10251/214711 |
| Access Level: | acceso abierto |
| Palavra-chave: | Cavity optomechanics Gallium phosphide Photonic integrated circuits TEORÍA DE LA SEÑAL Y COMUNICACIONES FISICA APLICADA |
| Resumo: | [EN] Gallium Phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectric properties. Usually, GaP is grown epitaxially on III-V substrates to keep its crystallinity and later transferred to silicon wafers for further processing. Here, an alternative promising route for the fabrication of optomechanical (OM) cavities on GaP epitaxially grown on nominally (001)-oriented Si is introduced by using a two-step process consisting of a low-temperature etching of GaP followed by selective etching of the underneath silicon. The low-temperature (-30 degrees C) during the dry-etching of GaP hinders the lateral etching rate, preserving the pattern with a deviation between the design and the pattern in the GaP layer lower than 5%, avoiding the complex process of transferring and bonding a GaP wafer to a silicon-on-insulator wafer. To demonstrate the quality and feasibility of the proposed fabrication route, suspended OM cavities are fabricated and experimentally characterized. The cavities exhibit optical quality factors between 103 and 104 at telecom wavelengths, and localized mechanical resonances approximate to 3.1 GHz with quality factors approximate to 63 when measured at room temperature. These results suggest a simple and low-cost way to build GaP-based photonic devices directly integrated on industry-standard Si(001) photonic wafers.; Here, optomechanical (OM) cavities on Gallium Phosphide (GaP) epitaxially grown on exact (001)-Si are fabricated following a novel two-step dry-etching process. The suspended OM cavities showed optical Q-factors up to 104 at telecom wavelengths, and mechanical resonances at approximate to 3.1 GHz at room temperature, suggesting a simple and low-cost way to build GaP-based photonic devices directly integrated on Si(001) photonic wafers. image |
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