Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors
The synthesis of four new TTF derivatives bearing phthalimides and fluorinated alkyl moieties as potential ambipolar semiconductors is described. The presence of such electron-withdrawing groups permits the stabilization of the energy of HOMO and LUMO orbitals. The solid-state structures of these no...
| Autores: | , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2011 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/102948 |
| Acceso en línea: | http://hdl.handle.net/10261/102948 |
| Access Level: | acceso abierto |
| Palabra clave: | Single-crystals Carrier type Dithiophene-tetrathiafulvalene High-performance Organic semiconductors Field-effect transistors Powder diffracton data Thin-film transistors Monte-Carlo methods Charge-transport |
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oai:digital.csic.es:10261/102948 |
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Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductorsOtón, FranciscoPfattner, RaphaelPavlica, EgonOlivier, YoannMoreno Calvo, EvelynPuigdollers-González, JoaquimBratina, GvidoCornil, JérômeFontrodona, XavierMas Torrent, MartaVeciana, JaumeRovira, ConcepcióSingle-crystalsCarrier typeDithiophene-tetrathiafulvaleneHigh-performanceOrganic semiconductorsField-effect transistorsPowder diffracton dataThin-film transistorsMonte-Carlo methodsCharge-transportThe synthesis of four new TTF derivatives bearing phthalimides and fluorinated alkyl moieties as potential ambipolar semiconductors is described. The presence of such electron-withdrawing groups permits the stabilization of the energy of HOMO and LUMO orbitals. The solid-state structures of these novel molecules have been characterized by X-ray diffraction techniques. The potential of these materials as hole and electron conductors has been estimated under theoretical considerations by evaluating the position of the frontier energy levels as well as their charge carrier mobilities. Preparation of solution-processed single crystal organic field-effect transistors (OFETs) has resulted in hole mobilities of up to 0.33 cm2 V-1 s -1 for compound 1. On the other hand, electrical time of flight (EToF) measurements on single crystals of compound 3 demonstrated ambipolar transport, reaching very high mobility values around 2.0 cm2 V -1 s-1 for both types of charges. © 2010 American Chemical Society.The research leading to these results has received funding from the European Community's Seventh Framework Programme (FP7/2007-2013) under grant agreement n° 212311 of the ONE-P project, Marie Curie EST FuMASSEC, DGI, Spain (contracts CTQ2006-06333/BQU and CTQ2010-195011/BQU), the Generalitat de Catalunya, (2009SGR00516) and the program “Juan de la Cierva”(MICINN). We also thank Stefan T. Bromley for his advice regarding the DFT calculations and CESGA for the use of their computational resources. The work in Mons is also supported by the European ONE-P project as well as by the Belgian National Fund for Scientific Research (FNRS). Y.O. and J.C. are FNRS research fellows. Peer ReviewedAmerican Chemical Society2014201420112014info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/102948reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/FP7/212311info:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1029482026-05-22T06:33:51Z |
| dc.title.none.fl_str_mv |
Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors |
| title |
Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors |
| spellingShingle |
Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors Otón, Francisco Single-crystals Carrier type Dithiophene-tetrathiafulvalene High-performance Organic semiconductors Field-effect transistors Powder diffracton data Thin-film transistors Monte-Carlo methods Charge-transport |
| title_short |
Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors |
| title_full |
Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors |
| title_fullStr |
Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors |
| title_full_unstemmed |
Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors |
| title_sort |
Electron-withdrawing substituted tetrathiafulvalenes as ambipolar semiconductors |
| dc.creator.none.fl_str_mv |
Otón, Francisco Pfattner, Raphael Pavlica, Egon Olivier, Yoann Moreno Calvo, Evelyn Puigdollers-González, Joaquim Bratina, Gvido Cornil, Jérôme Fontrodona, Xavier Mas Torrent, Marta Veciana, Jaume Rovira, Concepció |
| author |
Otón, Francisco |
| author_facet |
Otón, Francisco Pfattner, Raphael Pavlica, Egon Olivier, Yoann Moreno Calvo, Evelyn Puigdollers-González, Joaquim Bratina, Gvido Cornil, Jérôme Fontrodona, Xavier Mas Torrent, Marta Veciana, Jaume Rovira, Concepció |
| author_role |
author |
| author2 |
Pfattner, Raphael Pavlica, Egon Olivier, Yoann Moreno Calvo, Evelyn Puigdollers-González, Joaquim Bratina, Gvido Cornil, Jérôme Fontrodona, Xavier Mas Torrent, Marta Veciana, Jaume Rovira, Concepció |
| author2_role |
author author author author author author author author author author author |
| dc.subject.none.fl_str_mv |
Single-crystals Carrier type Dithiophene-tetrathiafulvalene High-performance Organic semiconductors Field-effect transistors Powder diffracton data Thin-film transistors Monte-Carlo methods Charge-transport |
| topic |
Single-crystals Carrier type Dithiophene-tetrathiafulvalene High-performance Organic semiconductors Field-effect transistors Powder diffracton data Thin-film transistors Monte-Carlo methods Charge-transport |
| description |
The synthesis of four new TTF derivatives bearing phthalimides and fluorinated alkyl moieties as potential ambipolar semiconductors is described. The presence of such electron-withdrawing groups permits the stabilization of the energy of HOMO and LUMO orbitals. The solid-state structures of these novel molecules have been characterized by X-ray diffraction techniques. The potential of these materials as hole and electron conductors has been estimated under theoretical considerations by evaluating the position of the frontier energy levels as well as their charge carrier mobilities. Preparation of solution-processed single crystal organic field-effect transistors (OFETs) has resulted in hole mobilities of up to 0.33 cm2 V-1 s -1 for compound 1. On the other hand, electrical time of flight (EToF) measurements on single crystals of compound 3 demonstrated ambipolar transport, reaching very high mobility values around 2.0 cm2 V -1 s-1 for both types of charges. © 2010 American Chemical Society. |
| publishDate |
2011 |
| dc.date.none.fl_str_mv |
2011 2014 2014 2014 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_6501 |
| format |
article |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10261/102948 |
| url |
http://hdl.handle.net/10261/102948 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
#PLACEHOLDER_PARENT_METADATA_VALUE# info:eu-repo/grantAgreement/EC/FP7/212311 |
| dc.rights.none.fl_str_mv |
info:eu-repo/semantics/openAccess |
| eu_rights_str_mv |
openAccess |
| dc.publisher.none.fl_str_mv |
American Chemical Society |
| publisher.none.fl_str_mv |
American Chemical Society |
| dc.source.none.fl_str_mv |
reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC instname:Consejo Superior de Investigaciones Científicas (CSIC) |
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Consejo Superior de Investigaciones Científicas (CSIC) |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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1869418181839290368 |
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15,811543 |