Phase Transition FETs for Improved Dynamic Logic Gates
Transistors incorporating phase change materials (Phase Change FETs) are being investigated to obtain steep switching and a boost in the I ON /I OFF ratio and, thus, to solve power and energy limitations of CMOS technologies. In addition to the replacement of the transistors in conventional static C...
| Autores: | , , |
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| Formato: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2018 |
| País: | España |
| Recursos: | Universidad de Sevilla (US) |
| Repositorio: | idUS. Depósito de Investigación de la Universidad de Sevilla |
| OAI Identifier: | oai:idus.us.es:11441/135121 |
| Acesso em linha: | https://hdl.handle.net/11441/135121 https://doi.org/10.1109/LED.2018.2871855 |
| Access Level: | acceso abierto |
| Palavra-chave: | Steep subthreshold slope Phase transition materials Low voltage Dynamic logic Keeper transistor |
| Resumo: | Transistors incorporating phase change materials (Phase Change FETs) are being investigated to obtain steep switching and a boost in the I ON /I OFF ratio and, thus, to solve power and energy limitations of CMOS technologies. In addition to the replacement of the transistors in conventional static CMOS logic circuits, the distinguishing features of Phase Change FETs can be exploited in other application domains or can be useful for solving specific design challenges. In this letter, we take advantage of them to implement a smart dynamic gate in which undesirable contention currents are reduced, leading to speed advantage without power penalties. |
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