Electrical properties of disordered films of van der Waals semiconductor WS2 on paper

One of the primary objectives in contemporary electronics is to develop sensors that are not only scalable and cost-effective but also environmentally sustainable. To achieve this goal, numerous experiments have focused on incorporating nanomaterial-based films, which utilize nanoparticles or van de...

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Autores: Kharchich, F.Z., Castellanos-Gómez, Andrés, Frisenda, Riccardo
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2024
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/383731
Acceso en línea:http://hdl.handle.net/10261/383731
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85190999419&doi=10.1039%2fd3nr06535a&partnerID=40&md5=c137582ff45f89a51a8f9c856eab7263
Access Level:acceso abierto
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spelling Electrical properties of disordered films of van der Waals semiconductor WS2 on paperKharchich, F.Z.Castellanos-Gómez, AndrésFrisenda, RiccardoOne of the primary objectives in contemporary electronics is to develop sensors that are not only scalable and cost-effective but also environmentally sustainable. To achieve this goal, numerous experiments have focused on incorporating nanomaterial-based films, which utilize nanoparticles or van der Waals materials, on paper substrates. In this article, we present a novel fabrication technique for producing dry-abraded van der Waals films on paper, demonstrating outstanding electrical characteristics. We assess the quality and uniformity of these films by conducting a spatial resistivity characterization on a 5 × 5 cm2 dry-abraded WS2 film with an average thickness of 25 μm. Employing transfer length measurements with varying channel length-to-width ratios, we extract critical parameters, including sheet resistance and contact resistance. Notably, our findings reveal a resistivity approximately one order of magnitude lower than previous reports. The film's inherent disorder manifests as an asymmetric distribution of resistance values for specific geometries. We explore how this behavior can be effectively modeled through a random resistance network (RRN), which can reproduce the experimentally observed resistance distribution. Finally, we investigate the response of these devices under applied uniaxial strain and apply the RRN model to gain a deeper understanding of this process. © 2024 The Royal Society of ChemistryThis project was partially funded by the PRIN Grants 2D-FRONTIERS (20228879FT) and 2D-PentaSensing (P2022HT3FF) of Ministero dell'Universita e della Ricerca (MUR), by Sapienza University Ateneo funds "Progetti di Ricerca Medi" 2022 and by the Ministry of Science and Innovation (Spain) through the projects PID2020-115566RB-I00 and PDC2023-145920-I00.Peer reviewedRoyal Society of Chemistry (UK)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252024info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/383731https://www.scopus.com/inward/record.uri?eid=2-s2.0-85190999419&doi=10.1039%2fd3nr06535a&partnerID=40&md5=c137582ff45f89a51a8f9c856eab7263reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)InglésNanoscalehttps://doi.org/10.1039/D3NR06535ASíinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/3837312026-05-22T06:33:51Z
dc.title.none.fl_str_mv Electrical properties of disordered films of van der Waals semiconductor WS2 on paper
title Electrical properties of disordered films of van der Waals semiconductor WS2 on paper
spellingShingle Electrical properties of disordered films of van der Waals semiconductor WS2 on paper
Kharchich, F.Z.
title_short Electrical properties of disordered films of van der Waals semiconductor WS2 on paper
title_full Electrical properties of disordered films of van der Waals semiconductor WS2 on paper
title_fullStr Electrical properties of disordered films of van der Waals semiconductor WS2 on paper
title_full_unstemmed Electrical properties of disordered films of van der Waals semiconductor WS2 on paper
title_sort Electrical properties of disordered films of van der Waals semiconductor WS2 on paper
dc.creator.none.fl_str_mv Kharchich, F.Z.
Castellanos-Gómez, Andrés
Frisenda, Riccardo
author Kharchich, F.Z.
author_facet Kharchich, F.Z.
Castellanos-Gómez, Andrés
Frisenda, Riccardo
author_role author
author2 Castellanos-Gómez, Andrés
Frisenda, Riccardo
author2_role author
author
dc.contributor.none.fl_str_mv Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description One of the primary objectives in contemporary electronics is to develop sensors that are not only scalable and cost-effective but also environmentally sustainable. To achieve this goal, numerous experiments have focused on incorporating nanomaterial-based films, which utilize nanoparticles or van der Waals materials, on paper substrates. In this article, we present a novel fabrication technique for producing dry-abraded van der Waals films on paper, demonstrating outstanding electrical characteristics. We assess the quality and uniformity of these films by conducting a spatial resistivity characterization on a 5 × 5 cm2 dry-abraded WS2 film with an average thickness of 25 μm. Employing transfer length measurements with varying channel length-to-width ratios, we extract critical parameters, including sheet resistance and contact resistance. Notably, our findings reveal a resistivity approximately one order of magnitude lower than previous reports. The film's inherent disorder manifests as an asymmetric distribution of resistance values for specific geometries. We explore how this behavior can be effectively modeled through a random resistance network (RRN), which can reproduce the experimentally observed resistance distribution. Finally, we investigate the response of these devices under applied uniaxial strain and apply the RRN model to gain a deeper understanding of this process. © 2024 The Royal Society of Chemistry
publishDate 2024
dc.date.none.fl_str_mv 2024
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/383731
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85190999419&doi=10.1039%2fd3nr06535a&partnerID=40&md5=c137582ff45f89a51a8f9c856eab7263
url http://hdl.handle.net/10261/383731
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85190999419&doi=10.1039%2fd3nr06535a&partnerID=40&md5=c137582ff45f89a51a8f9c856eab7263
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Nanoscale
https://doi.org/10.1039/D3NR06535A
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Royal Society of Chemistry (UK)
publisher.none.fl_str_mv Royal Society of Chemistry (UK)
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
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repository.mail.fl_str_mv
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