Straintronic photodetectors based on 2D materials
[EN] The world suffered an enormous revolution thanks to the emergence of the electronics; nowadays, our lives are surrounded by electronic devices that make them easier. Since the first fabrication of a transistor (the base the most common electronic devices) in 1947, electronics is been improving...
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| Format: | doctoral thesis |
| Publication Date: | 2020 |
| Country: | España |
| Institution: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repository: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/249052 |
| Online Access: | http://hdl.handle.net/10261/249052 |
| Access Level: | Open access |
| Keyword: | Fotodetectores Optoelectrónica Física |
| Summary: | [EN] The world suffered an enormous revolution thanks to the emergence of the electronics; nowadays, our lives are surrounded by electronic devices that make them easier. Since the first fabrication of a transistor (the base the most common electronic devices) in 1947, electronics is been improving its performance by adding more elements to the electronic devices. In order to maintain the level of improvement, the size of the components included in the electronic devices decreased, which have led to difficulties during the last years. Researchers are looking for different strategies to continue the enhancement of electronics, among which is the study of new materials like 2D semiconductors. Likewise, another proposed idea is including more tuning knobs in the components, which would increase the functionality of each component. The different options for increasing the responses of the components include the control of different properties (degrees of freedom) of the device through control the valey or spin polarization or applying external deformations leading to valleytronics, spintronics, straintronics respectively. The main aim of this thesis is the development of a proof-of-concept straintronic device, which would proof the viability of this technique to keep the electronic progress. Thus, this device is fabricated with a new semiconductor, which allows us to fabricate this type of device unlike silicon (Si). This new material is a 2D semiconductor from the transition metal dichalcogenides (TMDCs) family, MoS2. Due to the special characteristics of 2D materials, the techniques used for studying and manipulating them are different from the common methods used in 3D semiconductor industry. So, we introduce the optical techniques that allow us to characterize the optical properties of these materials. Some of them, like Raman and photoluminescence spectroscopies, are well spread in the material science world while some others are used specifically in 2D materials. All the different optical methods used along the thesis are presented in Chapter 2, where the details for studying the TMDCs family are included. The different steps and methods used for electrically contact and measure these materials are explained in Chapter 3. Here, the steps of the different processes are presented with the options available depending on the needs of the experiment. Moreover, one technique developed during the thesis which allows to minimize the number of steps is explained in this Chapter. In Chapter 4, we fabricate several MoS2 simple photodetector devices which can be strained. These photodetectors show an optoelectrical response to the strain, which is the mayor goal of this thesis. Different experiments prove the reliability of this new design for electronic components. The results achieved in the last Chapter open a new path for researching this type of devices. As mentioned, the new design will allow to have components with higher functionalities and the use of 2D materials solve some of the issues lately found in the electronics industry. Moreover, the 2D devices can be mixed with the current Si technology, for improving the performance of the electronic devices. Thus, new concept devices would keep the improvement race in the electronic world. |
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