Observation of AlGaAs/GaAs multiquantum well structure by scanning tunneling microscopy

We have imaged an AlGaAs/GaAs multiquantum well structure by scanning tunneling microscopy (STM). In order to localize the structure the STM is integrated in a conventional scanning electron microscope. The observed surface structure has a periodicity of ≊180 Å and shows an apparent corrugation of ≊...

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Detalles Bibliográficos
Autores: Gómez-Rodríguez, J. M., Baró, A. M., Silveira, Juan Pedro, Vázquez López, Manuel, González Díez, Yolanda, Briones Fernández-Pola, Fernando
Tipo de recurso: artículo
Fecha de publicación:1990
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/52295
Acceso en línea:http://hdl.handle.net/10261/52295
Access Level:acceso abierto
Descripción
Sumario:We have imaged an AlGaAs/GaAs multiquantum well structure by scanning tunneling microscopy (STM). In order to localize the structure the STM is integrated in a conventional scanning electron microscope. The observed surface structure has a periodicity of ≊180 Å and shows an apparent corrugation of ≊10 Å in the constant current mode. We discuss the possible mechanisms of the observed contrast, which we tentatively attribute to the different electrical properties of the two different layers.

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