Controlling Magneto-Ionics by Defect Engineering Through Light Ion Implantation
Magneto-ionics relies on the voltage-driven transport of ions to modify magnetic properties. As a diffusion-controlled mechanism, defects play a central role in determining ion motion and, hence, magneto-ionic response. Here, the potential of ion implantation is exploited to engineer depth-resolved...
| Autores: | , , , , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/364688 |
| Acceso en línea: | http://hdl.handle.net/10261/364688 https://api.elsevier.com/content/abstract/scopus_id/85194504249 |
| Access Level: | acceso abierto |
| Palabra clave: | Ion implantation Magneto-ionics Voltage control of magnetism |
| Sumario: | Magneto-ionics relies on the voltage-driven transport of ions to modify magnetic properties. As a diffusion-controlled mechanism, defects play a central role in determining ion motion and, hence, magneto-ionic response. Here, the potential of ion implantation is exploited to engineer depth-resolved defect type and density with the aim to control the magneto-ionic behavior of Co3O4 thin films. It is demonstrated that through a single implantation process of light ions (He+) at 5 keV, the magneto-ionic response of a nanostructured 50 nm thick Co3O4 film, in terms of rate and amount of induced magnetization, at short-, mid-, and long-term voltage actuation, can be controlled by varying the generated collisional damage through the ion fluence. These results constitute a proof-of-principle that paves the way to further use ion implantation (tuning the ion nature, energy, fluence, target temperature, or using multiple implantations) to enhance performance in magneto-ionic systems, with implications in ionic-based devices. |
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