Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN

We investigate the hydrostatic pressure dependence of the zone center optical phonons of c-plane and a-plane wurtzite InN epilayers grown on GaN substrates. The longitudinal to transverse mode splitting for the A1 and E1 modes was found to increase with increasing pressure, whereas the associated tr...

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Autor: Serrano Gutiérrez, Jorge
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2018
País:España
Institución:Universidad de Valladolid
Repositorio:UVaDOC. Repositorio Documental de la Universidad de Valladolid
OAI Identifier:oai:uvadoc.uva.es:10324/65228
Acceso en línea:https://doi.org/10.1103/PhysRevB.98.165204
https://uvadoc.uva.es/handle/10324/65228
Access Level:acceso abierto
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spelling Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InNSerrano Gutiérrez, JorgeWe investigate the hydrostatic pressure dependence of the zone center optical phonons of c-plane and a-plane wurtzite InN epilayers grown on GaN substrates. The longitudinal to transverse mode splitting for the A1 and E1 modes was found to increase with increasing pressure, whereas the associated transverse effective charge decreases for both modes as e∗T(A1)=2.93–9.9×10−3P and e∗T(E1)=2.80–10.6×10−3P (in units of elementary charge and P in GPa). These observations are well in line with results for other II–VI, III–V, and group-IV semiconductor compounds as far as the relation between the magnitude and sign of the pressure derivative of e∗T and the bond ionicity is concerned. As the latter increases so does |∂e∗T/∂P| with a sign change from positive to negative for bond ionicities around fi=0.46 for compounds with anions belonging to the first row of the Periodic Table. A comparison of the results for InN and other nine tetrahedrally bonded compounds indicate that the pressure behavior of the transverse effective charge is mainly determined by the strength of the Pauli repulsion between cation valence electrons and those of the anion core. We also perform ab initio calculations in order to address the origin of the observed increase in linewidth of the Ehigh2 mode which is found to arise from a pressure-induced increase in the rate of two-phonon decay processes. This broadening is associated with tuning into resonance of a steep edge in the two-phonon density of states around 460 cm−1 with the frequency of the Ehigh2 mode.American Physical Society2018info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://doi.org/10.1103/PhysRevB.98.165204https://uvadoc.uva.es/handle/10324/65228reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolidinstname:Universidad de ValladolidInglésinfo:eu-repo/semantics/openAccessoai:uvadoc.uva.es:10324/652282026-06-13T12:44:47Z
dc.title.none.fl_str_mv Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN
title Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN
spellingShingle Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN
Serrano Gutiérrez, Jorge
title_short Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN
title_full Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN
title_fullStr Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN
title_full_unstemmed Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN
title_sort Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN
dc.creator.none.fl_str_mv Serrano Gutiérrez, Jorge
author Serrano Gutiérrez, Jorge
author_facet Serrano Gutiérrez, Jorge
author_role author
description We investigate the hydrostatic pressure dependence of the zone center optical phonons of c-plane and a-plane wurtzite InN epilayers grown on GaN substrates. The longitudinal to transverse mode splitting for the A1 and E1 modes was found to increase with increasing pressure, whereas the associated transverse effective charge decreases for both modes as e∗T(A1)=2.93–9.9×10−3P and e∗T(E1)=2.80–10.6×10−3P (in units of elementary charge and P in GPa). These observations are well in line with results for other II–VI, III–V, and group-IV semiconductor compounds as far as the relation between the magnitude and sign of the pressure derivative of e∗T and the bond ionicity is concerned. As the latter increases so does |∂e∗T/∂P| with a sign change from positive to negative for bond ionicities around fi=0.46 for compounds with anions belonging to the first row of the Periodic Table. A comparison of the results for InN and other nine tetrahedrally bonded compounds indicate that the pressure behavior of the transverse effective charge is mainly determined by the strength of the Pauli repulsion between cation valence electrons and those of the anion core. We also perform ab initio calculations in order to address the origin of the observed increase in linewidth of the Ehigh2 mode which is found to arise from a pressure-induced increase in the rate of two-phonon decay processes. This broadening is associated with tuning into resonance of a steep edge in the two-phonon density of states around 460 cm−1 with the frequency of the Ehigh2 mode.
publishDate 2018
dc.date.none.fl_str_mv 2018
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://doi.org/10.1103/PhysRevB.98.165204
https://uvadoc.uva.es/handle/10324/65228
url https://doi.org/10.1103/PhysRevB.98.165204
https://uvadoc.uva.es/handle/10324/65228
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname:Universidad de Valladolid
instname_str Universidad de Valladolid
reponame_str UVaDOC. Repositorio Documental de la Universidad de Valladolid
collection UVaDOC. Repositorio Documental de la Universidad de Valladolid
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