Strain effects on the surface optical transitions of GaAs
The surface optical properties of GaAs on GaP-strained layers have been analyzed in situ by chemical modulation spectroscopy. A clear surface-related optical transition has been identified, and the effect of strain on this transition has been studied, showing a blueshift of 30 meV even for epitaxies...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 1998 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/27415 |
| Acceso en línea: | http://hdl.handle.net/10261/27415 |
| Access Level: | acceso abierto |
| Palabra clave: | Surface optical properties GaAs |
| Sumario: | The surface optical properties of GaAs on GaP-strained layers have been analyzed in situ by chemical modulation spectroscopy. A clear surface-related optical transition has been identified, and the effect of strain on this transition has been studied, showing a blueshift of 30 meV even for epitaxies as thin as 1 ML of GaAs deposited on top of GaP. This small shift is consistent with a transition between dimer states and dangling-bond states of the Ga-Ga dimers. |
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