Polarization strategies to improve the emission of a Si-based light source emitting at 1.55 um

We present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the devices and their main optical limitations are presented. We show that under...

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Detalles Bibliográficos
Autores: Ramírez Ramírez, Joan Manel, Jambois, Olivier, Berencén Ramírez, Yonder Antonio, Navarro Urrios, Daniel, Anopchenko, Aleksei, Marconi, Alessandro, Prtljaga, Nikola, Daldosso, Nicola, Pavesi, Lorenzo, Colonna, Jean-Philippe, Fedeli, Jean-Marc, Garrido Fernández, Blas
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2011
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/32396
Acceso en línea:https://hdl.handle.net/2445/32396
Access Level:acceso abierto
Palabra clave:Nanocristalls semiconductors
Silici
Metall-òxid-semiconductors complementaris
Fotònica
Semiconductor nanocrystals
Silicon
Complementary metal oxide semiconductors
Photonics
Descripción
Sumario:We present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the devices and their main optical limitations are presented. We show that under PV polarization scheme, the devices achieve one order of magnitude superior performance in comparison with DC. Time-resolved measurements have shown that this enhancement is met only for active layers in which annealing temperature is high enough (>1000 ◦C) for silicon nanocrystal (Si-nc) formation. Modeling of the system with rate equations has been done and excitation cross-sections for both Si-nc and Er3+ ions have been extracted.

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