Influence of Li doping on the morphology and luminescence of Ga_2O_3 microrods grown by a vapor-solid method

Gallium oxide microrods have been grown by an evaporation-deposition method by using a precursor containing lithium in order to check the influence of such dopant on the morphology and physical properties of the obtained ß-Ga_2O_3 structures. SEM studies show that the morphology is modified with res...

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Detalles Bibliográficos
Autores: López, I, Alonso Orts, Manuel, Nogales Díaz, Emilio, Méndez Martín, María Bianchi, Piqueras De Noriega, Francisco Javier
Tipo de recurso: artículo
Fecha de publicación:2016
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/17704
Acceso en línea:https://hdl.handle.net/20.500.14352/17704
Access Level:acceso abierto
Palabra clave:538.9
Nanowires
ß-Ga_2O_3
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
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oai_identifier_str oai:docta.ucm.es:20.500.14352/17704
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network_name_str España
repository_id_str
spelling Influence of Li doping on the morphology and luminescence of Ga_2O_3 microrods grown by a vapor-solid methodLópez, IAlonso Orts, ManuelNogales Díaz, EmilioMéndez Martín, María BianchiPiqueras De Noriega, Francisco Javier538.9Nanowiresß-Ga_2O_3Física de materialesFísica del estado sólido2211 Física del Estado SólidoGallium oxide microrods have been grown by an evaporation-deposition method by using a precursor containing lithium in order to check the influence of such dopant on the morphology and physical properties of the obtained ß-Ga_2O_3 structures. SEM studies show that the morphology is modified with respect to undoped gallium oxide, promoting the growth of micropyramids transversal to the microwire axis. Raman analysis reveals good crystal quality and an additional Raman peak centred at around 270 cm^(-1), characteristic of these samples and not present in undoped monoclinic gallium oxide. The presence of the Li^(+) ions also influences the luminescence emission by inducing a red-shift of the characteristic UV-blue defect band of gallium oxide. In addition, an intense sharp peak centred around 717 nm observed both by cathodoluminescence (CL) and photoluminescence (PL) is also attributed to the presence of these ions. The Li related luminescence features have also been investigated by PL excitation (PLE) spectra and by the temperature dependence of the luminescence.Iop Publishing LtdUniversidad Complutense de Madrid20162016-11-0120162016-11-01journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/17704reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/177042026-06-02T12:44:21Z
dc.title.none.fl_str_mv Influence of Li doping on the morphology and luminescence of Ga_2O_3 microrods grown by a vapor-solid method
title Influence of Li doping on the morphology and luminescence of Ga_2O_3 microrods grown by a vapor-solid method
spellingShingle Influence of Li doping on the morphology and luminescence of Ga_2O_3 microrods grown by a vapor-solid method
López, I
538.9
Nanowires
ß-Ga_2O_3
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title_short Influence of Li doping on the morphology and luminescence of Ga_2O_3 microrods grown by a vapor-solid method
title_full Influence of Li doping on the morphology and luminescence of Ga_2O_3 microrods grown by a vapor-solid method
title_fullStr Influence of Li doping on the morphology and luminescence of Ga_2O_3 microrods grown by a vapor-solid method
title_full_unstemmed Influence of Li doping on the morphology and luminescence of Ga_2O_3 microrods grown by a vapor-solid method
title_sort Influence of Li doping on the morphology and luminescence of Ga_2O_3 microrods grown by a vapor-solid method
dc.creator.none.fl_str_mv López, I
Alonso Orts, Manuel
Nogales Díaz, Emilio
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
author López, I
author_facet López, I
Alonso Orts, Manuel
Nogales Díaz, Emilio
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
author_role author
author2 Alonso Orts, Manuel
Nogales Díaz, Emilio
Méndez Martín, María Bianchi
Piqueras De Noriega, Francisco Javier
author2_role author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Nanowires
ß-Ga_2O_3
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic 538.9
Nanowires
ß-Ga_2O_3
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
description Gallium oxide microrods have been grown by an evaporation-deposition method by using a precursor containing lithium in order to check the influence of such dopant on the morphology and physical properties of the obtained ß-Ga_2O_3 structures. SEM studies show that the morphology is modified with respect to undoped gallium oxide, promoting the growth of micropyramids transversal to the microwire axis. Raman analysis reveals good crystal quality and an additional Raman peak centred at around 270 cm^(-1), characteristic of these samples and not present in undoped monoclinic gallium oxide. The presence of the Li^(+) ions also influences the luminescence emission by inducing a red-shift of the characteristic UV-blue defect band of gallium oxide. In addition, an intense sharp peak centred around 717 nm observed both by cathodoluminescence (CL) and photoluminescence (PL) is also attributed to the presence of these ions. The Li related luminescence features have also been investigated by PL excitation (PLE) spectra and by the temperature dependence of the luminescence.
publishDate 2016
dc.date.none.fl_str_mv 2016
2016-11-01
2016
2016-11-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/17704
url https://hdl.handle.net/20.500.14352/17704
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Iop Publishing Ltd
publisher.none.fl_str_mv Iop Publishing Ltd
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869417119186157568
score 15,298079

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