Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cells

The growing interest in using thinner wafers (< 200 μm) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature deposited back contacts based on boron-doped amorphous silicon films obtained...

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Autores: Muñoz Ramos, David, Voz Sánchez, Cristóbal, Martin Garcia, Isidro, Orpella, Albert, Alcubilla González, Ramón, Villar, Fernando, Bertomeu i Balagueró, Joan, Andreu i Batallé, Jordi, Roca i Cabarrocas, P. (Pere)
Formato: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2008
País:España
Recursos:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/98054
Acesso em linha:https://hdl.handle.net/2445/98054
Access Level:acceso abierto
Palavra-chave:Cèl·lules solars
El·lipsometria
Solar cells
Ellipsometry
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spelling Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cellsMuñoz Ramos, DavidVoz Sánchez, CristóbalMartin Garcia, IsidroOrpella, AlbertAlcubilla González, RamónVillar, FernandoBertomeu i Balagueró, JoanAndreu i Batallé, JordiRoca i Cabarrocas, P. (Pere)Cèl·lules solarsEl·lipsometriaSolar cellsEllipsometryThe growing interest in using thinner wafers (< 200 μm) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature deposited back contacts based on boron-doped amorphous silicon films obtained by Hot-Wire CVD. The influence of the deposition parameters and the use of an intrinsic buffer layer have been considered. The microstructure of the deposited thin films has been comprehensively studied by Spectroscopic Ellipsometry in the UV-visible range. The effective recombination velocity at the back surface has been measured by the Quasi-Steady-State Photoconductance technique. Complete double-side heterojunction solar cells (1 cm 2) have been fabricated and characterized by External Quantum Efficiency and current-voltage measurements. Total-area conversion efficiencies up to 14.5% were achieved in a fully low temperature process (< 200 °C).Elsevier B.V.2016201620082016info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersion18 p.application/pdfhttps://hdl.handle.net/2445/98054Articles publicats en revistes (Física Aplicada)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésVersió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2007.12.020Thin Solid Films, 2008, vol. 516, num. 20, p. 6782-6785http://dx.doi.org/10.1016/j.tsf.2007.12.020(c) Elsevier B.V., 2008info:eu-repo/semantics/openAccessoai:recercat.cat:2445/980542026-05-29T05:05:01Z
dc.title.none.fl_str_mv Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cells
title Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cells
spellingShingle Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cells
Muñoz Ramos, David
Cèl·lules solars
El·lipsometria
Solar cells
Ellipsometry
title_short Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cells
title_full Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cells
title_fullStr Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cells
title_full_unstemmed Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cells
title_sort Low temperature back-surface-field contacts deposited by Hot-wire CVD for heterojunction solar cells
dc.creator.none.fl_str_mv Muñoz Ramos, David
Voz Sánchez, Cristóbal
Martin Garcia, Isidro
Orpella, Albert
Alcubilla González, Ramón
Villar, Fernando
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Roca i Cabarrocas, P. (Pere)
author Muñoz Ramos, David
author_facet Muñoz Ramos, David
Voz Sánchez, Cristóbal
Martin Garcia, Isidro
Orpella, Albert
Alcubilla González, Ramón
Villar, Fernando
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Roca i Cabarrocas, P. (Pere)
author_role author
author2 Voz Sánchez, Cristóbal
Martin Garcia, Isidro
Orpella, Albert
Alcubilla González, Ramón
Villar, Fernando
Bertomeu i Balagueró, Joan
Andreu i Batallé, Jordi
Roca i Cabarrocas, P. (Pere)
author2_role author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Cèl·lules solars
El·lipsometria
Solar cells
Ellipsometry
topic Cèl·lules solars
El·lipsometria
Solar cells
Ellipsometry
description The growing interest in using thinner wafers (< 200 μm) requires the development of low temperature passivation strategies for the back contact of heterojunction solar cells. In this work, we investigate low temperature deposited back contacts based on boron-doped amorphous silicon films obtained by Hot-Wire CVD. The influence of the deposition parameters and the use of an intrinsic buffer layer have been considered. The microstructure of the deposited thin films has been comprehensively studied by Spectroscopic Ellipsometry in the UV-visible range. The effective recombination velocity at the back surface has been measured by the Quasi-Steady-State Photoconductance technique. Complete double-side heterojunction solar cells (1 cm 2) have been fabricated and characterized by External Quantum Efficiency and current-voltage measurements. Total-area conversion efficiencies up to 14.5% were achieved in a fully low temperature process (< 200 °C).
publishDate 2008
dc.date.none.fl_str_mv 2008
2016
2016
2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/98054
url https://hdl.handle.net/2445/98054
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2007.12.020
Thin Solid Films, 2008, vol. 516, num. 20, p. 6782-6785
http://dx.doi.org/10.1016/j.tsf.2007.12.020
dc.rights.none.fl_str_mv (c) Elsevier B.V., 2008
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Elsevier B.V., 2008
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv 18 p.
application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.198674

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