Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers

The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smo...

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Autores: Roura Grabulosa, Pere, Vilà i Arbonès, Anna Maria, Bosch, J., López-de Miguel, Manel, Cornet i Calveras, Albert, Morante i Lleonart, Joan R., Westwood, D. I.
Tipo de recurso: artículo
Fecha de publicación:1997
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:10256/3049
Acceso en línea:http://hdl.handle.net/10256/3049
Access Level:acceso abierto
Palabra clave:Gal·li
Compostos d'indi
Espectres d'absorció
Semiconductors
Absorption spectra
Gallium
Indium compounds
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spelling Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layersRoura Grabulosa, PereVilà i Arbonès, Anna MariaBosch, J.López-de Miguel, ManelCornet i Calveras, AlbertMorante i Lleonart, Joan R.Westwood, D. I.Gal·liCompostos d'indiEspectres d'absorcióSemiconductorsAbsorption spectraGalliumIndium compoundsThe origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05<x<0.8). On the other hand, in thin enough layers strain inhomogeneities are dominant. This evolution in line with layer thickness is due to the atomic diffusion at the surface during growth, induced by the strain inhomogeneities that arise from stress relaxation. In consequence, the strain variations present in the layer are converted into composition variations during growth. This process is energetically favorable as it diminishes elastic energy. An additional support to this hypothesis is given by a clear proportionality between the magnitude of the composition variations and the mean strainAmerican Institute of Physics1997info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10256/3049http://hdl.handle.net/10256/3049© Journal of Applied Physics, 1997, vol. 82, núm. 3, p. 1147-1152Articles publicats (D-F)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)Inglésinfo:eu-repo/semantics/altIdentifier/doi/10.1063/1.365881info:eu-repo/semantics/altIdentifier/issn/0021-8979Tots els drets reservatsinfo:eu-repo/semantics/openAccessoai:recercat.cat:10256/30492026-05-29T05:05:01Z
dc.title.none.fl_str_mv Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
title Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
spellingShingle Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
Roura Grabulosa, Pere
Gal·li
Compostos d'indi
Espectres d'absorció
Semiconductors
Absorption spectra
Gallium
Indium compounds
title_short Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
title_full Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
title_fullStr Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
title_full_unstemmed Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
title_sort Atomic diffusion induced by stress relaxation in InGaAs/GaAs epitaxial layers
dc.creator.none.fl_str_mv Roura Grabulosa, Pere
Vilà i Arbonès, Anna Maria
Bosch, J.
López-de Miguel, Manel
Cornet i Calveras, Albert
Morante i Lleonart, Joan R.
Westwood, D. I.
author Roura Grabulosa, Pere
author_facet Roura Grabulosa, Pere
Vilà i Arbonès, Anna Maria
Bosch, J.
López-de Miguel, Manel
Cornet i Calveras, Albert
Morante i Lleonart, Joan R.
Westwood, D. I.
author_role author
author2 Vilà i Arbonès, Anna Maria
Bosch, J.
López-de Miguel, Manel
Cornet i Calveras, Albert
Morante i Lleonart, Joan R.
Westwood, D. I.
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Gal·li
Compostos d'indi
Espectres d'absorció
Semiconductors
Absorption spectra
Gallium
Indium compounds
topic Gal·li
Compostos d'indi
Espectres d'absorció
Semiconductors
Absorption spectra
Gallium
Indium compounds
description The origin of the microscopic inhomogeneities in InxGa1-xAs layers grown on GaAs by molecular beam epitaxy is analyzed through the optical absorption spectra near the band gap. It is seen that, for relaxed thick layers of about 2.8μm, composition inhomogeneities are responsible for the band edge smoothing into the whole compositional range (0.05<x<0.8). On the other hand, in thin enough layers strain inhomogeneities are dominant. This evolution in line with layer thickness is due to the atomic diffusion at the surface during growth, induced by the strain inhomogeneities that arise from stress relaxation. In consequence, the strain variations present in the layer are converted into composition variations during growth. This process is energetically favorable as it diminishes elastic energy. An additional support to this hypothesis is given by a clear proportionality between the magnitude of the composition variations and the mean strain
publishDate 1997
dc.date.none.fl_str_mv 1997
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10256/3049
http://hdl.handle.net/10256/3049
url http://hdl.handle.net/10256/3049
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1063/1.365881
info:eu-repo/semantics/altIdentifier/issn/0021-8979
dc.rights.none.fl_str_mv Tots els drets reservats
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Tots els drets reservats
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv © Journal of Applied Physics, 1997, vol. 82, núm. 3, p. 1147-1152
Articles publicats (D-F)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,812429

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