Light-induced ferroelectric modulation of p-n homojunctions in monolayer MoS2
The association of 2D materials and ferroelectrics offers a promisingapproach to tune the optoelectronic properties of atomically thin TransitionMetal Dichalcogenides (TMDs). In this work, the combined effect offerroelectricity and light on the optoelectronic properties of monolayer(1L)-MoS2 deposited...
| Autores: | , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2024 |
| País: | España |
| Institución: | Universidad Autónoma de Madrid |
| Repositorio: | Biblos-e Archivo. Repositorio Institucional de la UAM |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.uam.es:10486/713267 |
| Acceso en línea: | http://hdl.handle.net/10486/713267 https://dx.doi.org/10.1002/adom.202400624 |
| Access Level: | acceso abierto |
| Palabra clave: | Ferroelectrics Lithium Niobate Monolayer MoS2 Photodoping Photoluminescence Modulation p-n Homojunctions Física |
| Sumario: | The association of 2D materials and ferroelectrics offers a promisingapproach to tune the optoelectronic properties of atomically thin TransitionMetal Dichalcogenides (TMDs). In this work, the combined effect offerroelectricity and light on the optoelectronic properties of monolayer(1L)-MoS2 deposited on periodically poled lithium niobate crystals is explored.Using scanning micro-photoluminescence, the effect of excitation intensity,scanning direction, and domain walls on the 1L-MoS2 photoluminescenceproperties is analyzed, offering insights into charge modulation of MoS2 . Thefindings unveil a photoinduced charging process dependent on theferroelectric domain orientation, in which light induces charge generation andtransfer at the monolayer-substrate interface. This highlights the substantialrole of light excitation in ferroelectrically-driven electrostatic doping in MoS 2 .Additionally, the work provides insights into the effect of the strong,nanometrically confined electric fields on LiNbO3 domain wall surfaces,demonstrating precise control over charge carriers in MoS2 , and enabling thecreation of deterministic p-n homojunctions with exceptional precision. Theresults suggest prospects for novel optoelectronic and photonic applicationinvolving monolayer TMDs by combining light-matter interaction processesand the surface selectivity provided by ferroelectric domain structures |
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