Stress-mediated solution deposition method to stabilize ferroelectric BiFe1-xCrxO3 perovskite thin films with narrow bandgaps

Ferroelectric oxides with low bandgaps are mainly based on the BiFeO perovskite upon the partial substitution of iron with different cations. However, the structural stability of many of these perovskites is only possible by their processing at high pressures (HP,.

Detalles Bibliográficos
Autores: Jiménez-Zavala, Ricardo|||0000-0002-5333-8529, Ricote, J.|||0000-0002-2907-2505, Bretos, Iñigo, Jiménez Riobóo, Rafael J.|||0000-0002-9545-0172, Mompean, Federico J.|||0000-0002-6346-1475, Ruiz y Ruiz de Gopegui, Ana, Xie, Haibing|||0000-0002-5070-2882, Lira-Cantu, Monica|||0000-0002-3393-7436, Calzada, M. Lourdes|||0000-0002-2286-653X
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:239266
Acceso en línea:https://ddd.uab.cat/record/239266
https://dx.doi.org/urn:doi:10.1016/j.jeurceramsoc.2020.12.042
Access Level:acceso abierto
Palabra clave:Thin film
Bismuth ferrite
Chemical solution deposition
Ferroelectricity
Bandgap
Descripción
Sumario:Ferroelectric oxides with low bandgaps are mainly based on the BiFeO perovskite upon the partial substitution of iron with different cations. However, the structural stability of many of these perovskites is only possible by their processing at high pressures (HP,.

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