Cycle-to-cycle variability analysis of Ti/Al<inf>2</inf>O<inf>3</inf>-based memristors
In this work, an experimental analysis of the resistive switching behavior of TiN/Ti/Al2O3/W memristors is presented. The main focus is on the analysis of the variability of the key parameters during long series of cycles, using both sweep and pulsed voltage measurement sequences. In addition, the c...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2023 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/361291 |
| Acceso en línea: | http://hdl.handle.net/10261/361291 https://api.elsevier.com/content/abstract/scopus_id/85175251324 |
| Access Level: | acceso abierto |
| Palabra clave: | Al2O3 Correlation plots Memristors Resistive Switching Variability |
| Sumario: | In this work, an experimental analysis of the resistive switching behavior of TiN/Ti/Al2O3/W memristors is presented. The main focus is on the analysis of the variability of the key parameters during long series of cycles, using both sweep and pulsed voltage measurement sequences. In addition, the correlation of the resistive switching parameters between subsequent cycles has been investigated. The results demonstrate that memristors based on Ti/Al2O3 exhibit a low cycle-to-cycle variability between consecutive cycles, indicating their potential use for emerging applications. |
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