Transforming Device Efficiency and Stability in NiO-Sputtered n-i-p Perovskite Solar Cells by Soft-Landing and a Thin Spiro-OMeTAD Buffer Layer
[EN] The integration of inorganic materials in perovskite solar cells (PSCs) is critical for enhancing long-term operational stability, scalability, and economic viability. Here, we demonstrate the transformational efficacy of using a modified protocol for sputtered nickel oxide as a hole transport...
| Autores: | , , , , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2026 |
| País: | España |
| Institución: | Universitat Politècnica de València (UPV) |
| Repositorio: | RiuNet. Repositorio Institucional de la Universitat Politécnica de Valéncia |
| Idioma: | inglés |
| OAI Identifier: | oai:dnet:riunet______::7ec8ae9c39824f5d13168419f5027a20 |
| Acceso en línea: | https://riunet.upv.es/handle/10251/234040 |
| Access Level: | acceso embargado |
| Palabra clave: | NiO hole transporting layer (HTL) N-i-p perovskite solar cell Radio-frequency magnetron sputtering Record efficiency Thin Spiro-OMeTAD buffer layer |
| Sumario: | [EN] The integration of inorganic materials in perovskite solar cells (PSCs) is critical for enhancing long-term operational stability, scalability, and economic viability. Here, we demonstrate the transformational efficacy of using a modified protocol for sputtered nickel oxide as a hole transport layer (HTL) in n-i-p structured PSCs, in conjunction with a thin Spiro-OMeTAD buffer layer. The introduction of a biased grid and a buffer interface enable us to achieve a soft landing of NiO on the halide perovskite, thereby minimizing process-induced interfacial damage. Our results indicate that the buffer layer serves solely as an interfacial protection layer, rather than as a functional HTL. Using this approach, we report champion power conversion efficiencies of 23.45% (mean approximate to 22.2%) on rigid glass substrates and 22.1% (mean approximate to 21%) on flexible ITO-coated PET substrates, both employing fully inorganic charge transport layers. These results represent unprecedented enhancements over previously reported highest PCE values (<12%) for n-i-p devices using sputtered NiO as the HTL, placing them on par with p-i-n architectures that utilize a combination of NiO and organic HTLs. This work demonstrates a scalable, commercially viable pathway toward high-efficiency, stable perovskite photovoltaics based solely on sputtered inorganic layers, offering a competitive edge for further development. |
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