Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: a study of material, interface and device properties

This study explores the impact of an optimized amorphous silicon (a-Si) buffer layer on AlxIn1-xN-on-Si(100) heterojunction solar cells, with Al content varying from 0% (InN) to 55%. The buffer layer improves the structural quality of the AlInN layer, as evidenced by reduced full width at half maxim...

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Detalhes bibliográficos
Autores: Sun Hu, Michael|||0000-0001-7105-4784, Cornejo, Rubén, Mata, María de la, Molina Rubio, Sergio Ignacio, Damilano, Benjamin, Valdueza Felip, Sirona|||0000-0003-1817-5354, Naranjo Vega, Fernando Bernabé|||0000-0002-2119-6749
Formato: artículo
Fecha de publicación:2025
País:España
Recursos:Universidad de Alcalá (UAH)
Repositorio:e_Buah Biblioteca Digital Universidad de Alcalá
Idioma:inglés
OAI Identifier:oai:ebuah.uah.es:10017/66799
Acesso em linha:http://hdl.handle.net/10017/66799
https://dx.doi.org/10.1016/j.surfin.2025.107278
Access Level:acceso abierto
Palavra-chave:Reactive sputtering
AlInN
Silicon
Solar cell
A-Si
Buffer layer
Electrónica
Electronics
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spelling Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: a study of material, interface and device propertiesSun Hu, Michael|||0000-0001-7105-4784Cornejo, RubénMata, María de laMolina Rubio, Sergio IgnacioDamilano, BenjaminValdueza Felip, Sirona|||0000-0003-1817-5354Naranjo Vega, Fernando Bernabé|||0000-0002-2119-6749Reactive sputteringAlInNSiliconSolar cellA-SiBuffer layerElectrónicaElectronicsThis study explores the impact of an optimized amorphous silicon (a-Si) buffer layer on AlxIn1-xN-on-Si(100) heterojunction solar cells, with Al content varying from 0% (InN) to 55%. The buffer layer improves the structural quality of the AlInN layer, as evidenced by reduced full width at half maximum values in X-ray diffraction rocking curves around the AlInN (0002) peak. Atomic force microscopy reveals that the buffer layer does not alter surface roughness. The effectiveness of the a-Si buffer is demonstrated by an enhancement of the conversion efficiency under AM1.5G illumination from 3.3 % to 3.9 % for devices with 35 % Al. Looking at the effect of the Al content in devices with the a-Si buffer, the device with 22% Al shows the best photovoltaic performance, with a conversion efficiency of 4.1 % and a VOC of 0.42 V, JSC of 15.4 mA/cm², and FF of 63.3%. However, performance declines for Al contents above 36% due to increased resistivity and reduced carrier concentration. These findings highlight the critical role of the novel a-Si buffer layer developed by RF-sputtering and the Al content in optimizing AlInN/Si heterojunction solar cell performance.Comunidad de MadridUniversidad de AlcaláElsevier20252025-09-01journal articlehttp://purl.org/coar/resource_type/c_6501NAhttp://purl.org/coar/version/c_be7fb7dd8ff6fe43info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10017/66799https://dx.doi.org/10.1016/j.surfin.2025.107278reponame:e_Buah Biblioteca Digital Universidad de Alcaláinstname:Universidad de Alcalá (UAH)InglésengComunidad de Madrid http://dx.doi.org/10.13039/100012818 Not available S2018%2FNMT4326 SENSORES E INSTRUMENTACION EN TECNOLOGIAS FOTONICAS 2UAH Not available CM-JIN-2021-021UAH Not available EPU-DPTO%2F2020%2F012Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 PID2022-138434OB-C53 INTEGRACION DE NUEVOS CONTACTOS SELECTIVOS Y CAPAS ACTIVAS EN DISPOSITIVOS DE NUEVA GENERACION PARA APLICACIONES DE ENERGIA RENOVABLEUAH Not available PIUAH24%2FIA-053open accesshttp://purl.org/coar/access_right/c_abf2Attribution-NonCommercial 4.0 Internationalhttp://creativecommons.org/licenses/by-nc/4.0/info:eu-repo/semantics/openAccessoai:ebuah.uah.es:10017/667992026-06-18T11:13:07Z
dc.title.none.fl_str_mv Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: a study of material, interface and device properties
title Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: a study of material, interface and device properties
spellingShingle Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: a study of material, interface and device properties
Sun Hu, Michael|||0000-0001-7105-4784
Reactive sputtering
AlInN
Silicon
Solar cell
A-Si
Buffer layer
Electrónica
Electronics
title_short Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: a study of material, interface and device properties
title_full Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: a study of material, interface and device properties
title_fullStr Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: a study of material, interface and device properties
title_full_unstemmed Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: a study of material, interface and device properties
title_sort Enhancing solar cell efficiency of AlxIn1-xN/Si heterojunctions using an a-Si buffer: a study of material, interface and device properties
dc.creator.none.fl_str_mv Sun Hu, Michael|||0000-0001-7105-4784
Cornejo, Rubén
Mata, María de la
Molina Rubio, Sergio Ignacio
Damilano, Benjamin
Valdueza Felip, Sirona|||0000-0003-1817-5354
Naranjo Vega, Fernando Bernabé|||0000-0002-2119-6749
author Sun Hu, Michael|||0000-0001-7105-4784
author_facet Sun Hu, Michael|||0000-0001-7105-4784
Cornejo, Rubén
Mata, María de la
Molina Rubio, Sergio Ignacio
Damilano, Benjamin
Valdueza Felip, Sirona|||0000-0003-1817-5354
Naranjo Vega, Fernando Bernabé|||0000-0002-2119-6749
author_role author
author2 Cornejo, Rubén
Mata, María de la
Molina Rubio, Sergio Ignacio
Damilano, Benjamin
Valdueza Felip, Sirona|||0000-0003-1817-5354
Naranjo Vega, Fernando Bernabé|||0000-0002-2119-6749
author2_role author
author
author
author
author
author
dc.subject.none.fl_str_mv Reactive sputtering
AlInN
Silicon
Solar cell
A-Si
Buffer layer
Electrónica
Electronics
topic Reactive sputtering
AlInN
Silicon
Solar cell
A-Si
Buffer layer
Electrónica
Electronics
description This study explores the impact of an optimized amorphous silicon (a-Si) buffer layer on AlxIn1-xN-on-Si(100) heterojunction solar cells, with Al content varying from 0% (InN) to 55%. The buffer layer improves the structural quality of the AlInN layer, as evidenced by reduced full width at half maximum values in X-ray diffraction rocking curves around the AlInN (0002) peak. Atomic force microscopy reveals that the buffer layer does not alter surface roughness. The effectiveness of the a-Si buffer is demonstrated by an enhancement of the conversion efficiency under AM1.5G illumination from 3.3 % to 3.9 % for devices with 35 % Al. Looking at the effect of the Al content in devices with the a-Si buffer, the device with 22% Al shows the best photovoltaic performance, with a conversion efficiency of 4.1 % and a VOC of 0.42 V, JSC of 15.4 mA/cm², and FF of 63.3%. However, performance declines for Al contents above 36% due to increased resistivity and reduced carrier concentration. These findings highlight the critical role of the novel a-Si buffer layer developed by RF-sputtering and the Al content in optimizing AlInN/Si heterojunction solar cell performance.
publishDate 2025
dc.date.none.fl_str_mv 2025
2025-09-01
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
NA
http://purl.org/coar/version/c_be7fb7dd8ff6fe43
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10017/66799
https://dx.doi.org/10.1016/j.surfin.2025.107278
url http://hdl.handle.net/10017/66799
https://dx.doi.org/10.1016/j.surfin.2025.107278
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Comunidad de Madrid http://dx.doi.org/10.13039/100012818 Not available S2018%2FNMT4326 SENSORES E INSTRUMENTACION EN TECNOLOGIAS FOTONICAS 2
UAH Not available CM-JIN-2021-021
UAH Not available EPU-DPTO%2F2020%2F012
Agencia Estatal de Investigación http://dx.doi.org/10.13039/501100011033 Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023 PID2022-138434OB-C53 INTEGRACION DE NUEVOS CONTACTOS SELECTIVOS Y CAPAS ACTIVAS EN DISPOSITIVOS DE NUEVA GENERACION PARA APLICACIONES DE ENERGIA RENOVABLE
UAH Not available PIUAH24%2FIA-053
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution-NonCommercial 4.0 International
http://creativecommons.org/licenses/by-nc/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Attribution-NonCommercial 4.0 International
http://creativecommons.org/licenses/by-nc/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:e_Buah Biblioteca Digital Universidad de Alcalá
instname:Universidad de Alcalá (UAH)
instname_str Universidad de Alcalá (UAH)
reponame_str e_Buah Biblioteca Digital Universidad de Alcalá
collection e_Buah Biblioteca Digital Universidad de Alcalá
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.198674

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