Influence of yttrium doping on the structural, morphological and optical properties of nanostructured ZnO thin films grown by spray pyrolysis
This study reports on the deposition of highly transparent, n-type ZnO thin films on glass substrate at 450 C using spray pyrolysis processing, with the simultaneous insertion of yttrium (Y) at different percentages (0, 2, 5, 7 at%) as a dopant. The effect of Y doping on the structure, morphology an...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2019 |
| País: | España |
| Institución: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/13256 |
| Acceso en línea: | https://hdl.handle.net/20.500.14352/13256 |
| Access Level: | acceso abierto |
| Palabra clave: | 538.9 Zinc-oxide Electrical-properties Photoluminescence properties Hydrothermal synthesis Al Microstructure Luminescence Optimization Temperature Dependence Films Optical properties Zno Y doped Spray pyrolysis Física de materiales Física del estado sólido 2211 Física del Estado Sólido |
| Sumario: | This study reports on the deposition of highly transparent, n-type ZnO thin films on glass substrate at 450 C using spray pyrolysis processing, with the simultaneous insertion of yttrium (Y) at different percentages (0, 2, 5, 7 at%) as a dopant. The effect of Y doping on the structure, morphology and optical properties of Y doped ZnO (ZnO:Y) was investigated for optoelectronic applications. The obtained thin films were characterized by means of X-ray diffraction, field-emission scanning electron microscopy (FESEM), UV visible absorbance measurements, photoluminescence (PL) and cathodoluminescence (CL) spectroscopy. The as-prepared films exhibit well-defined hexagonal wurtzite structure grown along [002]. Field emission scanning electron microscope micrographs of the pure ZnO and ZnO:Y showed that the films acquired a dominance of hexagonal-like grains, the morphology was influenced by Y incorporation. All the films showed high transparency in the visible domain with an average transmittance of 83%. The band gap energy, Eg, increased from 3.12 eV to 3.18 eV by increasing the Y doping concentration up to 5 at% and then decreased to 3.15 eV for 7 at% Y content. The PL and CL measurements reveal a strong ultraviolet (UV) emission, suggesting that the as-prepared ZnO:Y thin films can potentially be used in optoelectronic devices. |
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