High thermoelectric performance in Bi2-xPbxBa2Co2Oy promoted by directional growth and annealing

Bi2-xPbxBa2Co2Oy (x=0.0, 0.2, 0.4, and 0.6) misfit compounds were grown by the laser floating zone technique. Microstructural analysis has shown the formation of thermoelectric grains together with high amount of secondary phases. Thermoelectric grains orientation is increased until 0.4Pb, while fur...

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Autores: Madre, M.A., Costa, F.M., Ferreira, N.M., Costa, S.I.R., Rasekh, S., Torres, M.A., Diez, J.C., Amaral, V.S., Amaral, J.S., Sotelo, A.
Tipo de recurso: artículo
Estado:Versión enviada para evaluación y publicación
Fecha de publicación:2016
País:España
Institución:Universidad de Zaragoza
Repositorio:Zaguán. Repositorio Digital de la Universidad de Zaragoza
OAI Identifier:oai:zaguan.unizar.es:32801
Acceso en línea:http://zaguan.unizar.es/record/32801
Access Level:acceso abierto
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spelling High thermoelectric performance in Bi2-xPbxBa2Co2Oy promoted by directional growth and annealingMadre, M.A.Costa, F.M.Ferreira, N.M.Costa, S.I.R.Rasekh, S.Torres, M.A.Diez, J.C.Amaral, V.S.Amaral, J.S.Sotelo, A.Bi2-xPbxBa2Co2Oy (x=0.0, 0.2, 0.4, and 0.6) misfit compounds were grown by the laser floating zone technique. Microstructural analysis has shown the formation of thermoelectric grains together with high amount of secondary phases. Thermoelectric grains orientation is increased until 0.4Pb, while further substitution drastically destroys the preferential grain orientation. Electrical resistivity is very low compared with the values obtained in sintered materials, spectacularly increasing power factor. Moreover, the performance of these materials was further improved subjecting the as-grown samples to a postannealing step due to the rise of thermoelectric phase content. These microstructural modifications led to a high decrease of electrical resistivity, improving power factor in around a factor two at room temperature, compared with the as-grown samples. Moreover, the low thermal conductivity of the textured annealed samples leads to a maximum estimated ZT value of 0.53 for the 0.2 Pb-doped samples, much higher than the reported in literature.2016info:eu-repo/semantics/articleinfo:eu-repo/semantics/submittedVersionapplication/pdfhttp://zaguan.unizar.es/record/32801reponame:Zaguán. Repositorio Digital de la Universidad de Zaragozainstname:Universidad de ZaragozaInglésinfo:eu-repo/grantAgreement/ES/DGA/T12info:eu-repo/grantAgreement/ES/DGA/T87info:eu-repo/grantAgreement/ES/MINECO/MAT2013-46505-C3-1-Rinfo:eu-repo/semantics/openAccessoai:zaguan.unizar.es:328012026-05-29T13:59:51Z
dc.title.none.fl_str_mv High thermoelectric performance in Bi2-xPbxBa2Co2Oy promoted by directional growth and annealing
title High thermoelectric performance in Bi2-xPbxBa2Co2Oy promoted by directional growth and annealing
spellingShingle High thermoelectric performance in Bi2-xPbxBa2Co2Oy promoted by directional growth and annealing
Madre, M.A.
title_short High thermoelectric performance in Bi2-xPbxBa2Co2Oy promoted by directional growth and annealing
title_full High thermoelectric performance in Bi2-xPbxBa2Co2Oy promoted by directional growth and annealing
title_fullStr High thermoelectric performance in Bi2-xPbxBa2Co2Oy promoted by directional growth and annealing
title_full_unstemmed High thermoelectric performance in Bi2-xPbxBa2Co2Oy promoted by directional growth and annealing
title_sort High thermoelectric performance in Bi2-xPbxBa2Co2Oy promoted by directional growth and annealing
dc.creator.none.fl_str_mv Madre, M.A.
Costa, F.M.
Ferreira, N.M.
Costa, S.I.R.
Rasekh, S.
Torres, M.A.
Diez, J.C.
Amaral, V.S.
Amaral, J.S.
Sotelo, A.
author Madre, M.A.
author_facet Madre, M.A.
Costa, F.M.
Ferreira, N.M.
Costa, S.I.R.
Rasekh, S.
Torres, M.A.
Diez, J.C.
Amaral, V.S.
Amaral, J.S.
Sotelo, A.
author_role author
author2 Costa, F.M.
Ferreira, N.M.
Costa, S.I.R.
Rasekh, S.
Torres, M.A.
Diez, J.C.
Amaral, V.S.
Amaral, J.S.
Sotelo, A.
author2_role author
author
author
author
author
author
author
author
author
description Bi2-xPbxBa2Co2Oy (x=0.0, 0.2, 0.4, and 0.6) misfit compounds were grown by the laser floating zone technique. Microstructural analysis has shown the formation of thermoelectric grains together with high amount of secondary phases. Thermoelectric grains orientation is increased until 0.4Pb, while further substitution drastically destroys the preferential grain orientation. Electrical resistivity is very low compared with the values obtained in sintered materials, spectacularly increasing power factor. Moreover, the performance of these materials was further improved subjecting the as-grown samples to a postannealing step due to the rise of thermoelectric phase content. These microstructural modifications led to a high decrease of electrical resistivity, improving power factor in around a factor two at room temperature, compared with the as-grown samples. Moreover, the low thermal conductivity of the textured annealed samples leads to a maximum estimated ZT value of 0.53 for the 0.2 Pb-doped samples, much higher than the reported in literature.
publishDate 2016
dc.date.none.fl_str_mv 2016
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/submittedVersion
format article
status_str submittedVersion
dc.identifier.none.fl_str_mv http://zaguan.unizar.es/record/32801
url http://zaguan.unizar.es/record/32801
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv info:eu-repo/grantAgreement/ES/DGA/T12
info:eu-repo/grantAgreement/ES/DGA/T87
info:eu-repo/grantAgreement/ES/MINECO/MAT2013-46505-C3-1-R
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv
publisher.none.fl_str_mv
dc.source.none.fl_str_mv reponame:Zaguán. Repositorio Digital de la Universidad de Zaragoza
instname:Universidad de Zaragoza
instname_str Universidad de Zaragoza
reponame_str Zaguán. Repositorio Digital de la Universidad de Zaragoza
collection Zaguán. Repositorio Digital de la Universidad de Zaragoza
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