Fe lattice sites, charge states, and spin dynamics in In0.10Ga0.90N following 57Mn+ implantation

This paper is part of the Special Topic on Frontiers in Nitride Semiconductors Research.-- et al.

Detalles Bibliográficos
Autores: Mpatani, Ongeziwe, Tarazaga Martín-Luengo, Aitana, Masenda, Hilary
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/416024
Acceso en línea:http://hdl.handle.net/10261/416024
Access Level:acceso abierto
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spelling Fe lattice sites, charge states, and spin dynamics in In0.10Ga0.90N following 57Mn+ implantationMpatani, OngeziweTarazaga Martín-Luengo, AitanaMasenda, HilaryThis paper is part of the Special Topic on Frontiers in Nitride Semiconductors Research.-- et al.The data that support the findings of this study are available from the corresponding authors upon reasonable request.The lattice locations and charge states of dopants in a crystal structure influence the optical, electronic, or magnetic properties of doped semiconductors. In this study, Fe lattice sites and charge states in In0:10Ga0:90N are investigated by emission Mössbauer spectroscopy following 57Mnþ implantation at ISOLDE, CERN. Room temperature measurements confirmed the presence of both Fe2þ and Fe3þ ions. The iron atoms with a 2+ charge state occupied the In/Ga site near a nitrogen vacancy. Paramagnetic Fe3þ signatures were evident on the outer regions of the spectra, akin to metal oxides, GaN, and AlN. Slow spin–lattice relaxation characteristics of high-spin ferric iron were observed, following T2 dependence. However, the relaxation rates in In0:10Ga0:90N are significantly slower than those in GaN. This is attributed to the weaker spin–lattice coupling, modified local symmetry, and crystal field splitting related to alloy disorder, softening the lattice. The ability to manipulate the dopant’s spin dynamics via alloying offers promising pathways for controlling spin coherence in InGaN-based spintronics and quantum devices.The authors thank the financial support provided by the Federal Ministry of Research, Technology, and Space (BMFTR), through Grant Nos. 05K22PGA, 05K25PGA, and 05K22PGB, alongside support from the ISOLDE collaboration. The authors acknowledge the support of the EU’s Horizon Europe Framework research and innovation program under Grant Agreement No. 101057511 (EURO-LABS) and of the European Union’s Horizon 2020 Framework research and innovation program under Grant Agreement No. 654002 (ENSAR2). O.M., H.M., D.N., K.B.-R., and G.P. acknowledge the support from the South African National Research Foundation (NRF) and the Department of Science and Innovation within the SA-CERN program. O.M. acknowledges the support from the PhD SA-CERN Excellence Bursary and the Wits Postgraduate Merit Award. H.P.G., B.Q., H.P.G., and S.Ó. acknowledge the support from the Icelandic Research Fund. R. Adhikari, A. Tarazaga Martín-Luengo, and A. Bonanni would like to acknowledge the support from the Austrian Science Fund (FWF) through Project No. TAI-817 and from JKU LIT Seed funding through Project No. LIT-2022-11-SEE-119. P.B.K. acknowledges the support from the Bulgarian Ministry of Education and Science, within the National Roadmap for Research Infrastructures (object CERN). I.U. acknowledges the support of the Spanish MICIU/AEI/10.13039/501100011033 through Project No. PID2023-147324NA-I00.Peer reviewedAmerican Institute of PhysicsFederal Ministry of Research, Technology and Space (Germany)European CommissionNational Research Foundation (South Africa)Icelandic Research FundAustrian Science FundMinistry of Education and Science (Bulgaria)Agencia Estatal de Investigación (España)Ministerio de Ciencia, Innovación y Universidades (España)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202620262025info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10261/416024reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/EC/HE/101057511info:eu-repo/grantAgreement/EC/H2020/654002info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2023-147324NA-I00https://doi.org/10.1063/5.0307091Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/4160242026-05-22T06:33:51Z
dc.title.none.fl_str_mv Fe lattice sites, charge states, and spin dynamics in In0.10Ga0.90N following 57Mn+ implantation
title Fe lattice sites, charge states, and spin dynamics in In0.10Ga0.90N following 57Mn+ implantation
spellingShingle Fe lattice sites, charge states, and spin dynamics in In0.10Ga0.90N following 57Mn+ implantation
Mpatani, Ongeziwe
title_short Fe lattice sites, charge states, and spin dynamics in In0.10Ga0.90N following 57Mn+ implantation
title_full Fe lattice sites, charge states, and spin dynamics in In0.10Ga0.90N following 57Mn+ implantation
title_fullStr Fe lattice sites, charge states, and spin dynamics in In0.10Ga0.90N following 57Mn+ implantation
title_full_unstemmed Fe lattice sites, charge states, and spin dynamics in In0.10Ga0.90N following 57Mn+ implantation
title_sort Fe lattice sites, charge states, and spin dynamics in In0.10Ga0.90N following 57Mn+ implantation
dc.creator.none.fl_str_mv Mpatani, Ongeziwe
Tarazaga Martín-Luengo, Aitana
Masenda, Hilary
author Mpatani, Ongeziwe
author_facet Mpatani, Ongeziwe
Tarazaga Martín-Luengo, Aitana
Masenda, Hilary
author_role author
author2 Tarazaga Martín-Luengo, Aitana
Masenda, Hilary
author2_role author
author
dc.contributor.none.fl_str_mv Federal Ministry of Research, Technology and Space (Germany)
European Commission
National Research Foundation (South Africa)
Icelandic Research Fund
Austrian Science Fund
Ministry of Education and Science (Bulgaria)
Agencia Estatal de Investigación (España)
Ministerio de Ciencia, Innovación y Universidades (España)
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
description This paper is part of the Special Topic on Frontiers in Nitride Semiconductors Research.-- et al.
publishDate 2025
dc.date.none.fl_str_mv 2025
2026
2026
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/416024
url http://hdl.handle.net/10261/416024
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
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info:eu-repo/grantAgreement/EC/HE/101057511
info:eu-repo/grantAgreement/EC/H2020/654002
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2023-147324NA-I00
https://doi.org/10.1063/5.0307091
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
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dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
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