Rapid thermal annealing effects on plasma deposited SiOx : H films

The bonding configuration, hydrogen evolution and defect content of rapid thermally annealed (RTA) SiOx:H films of different initial compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films was lost at temperatures lower than 700degreesC without a...

ver descrição completa

Detalhes bibliográficos
Autores: Martil De La Plaza, Ignacio, González Díaz, Germán, Prado Millán, Álvaro Del, San Andrés Serrano, Enrique
Formato: artículo
Fecha de publicación:2002
País:España
Recursos:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/59100
Acesso em linha:https://hdl.handle.net/20.500.14352/59100
Access Level:acceso abierto
Palavra-chave:537
Electron-Cyclotron-Resonance
Chemical-Vapor-Deposition
Interface
System.
Electricidad
Electrónica (Física)
2202.03 Electricidad
id ES_aac2f155e81fbf9cfa90e15669f709a2
oai_identifier_str oai:docta.ucm.es:20.500.14352/59100
network_acronym_str ES
network_name_str España
repository_id_str
spelling Rapid thermal annealing effects on plasma deposited SiOx : H filmsMartil De La Plaza, IgnacioGonzález Díaz, GermánPrado Millán, Álvaro DelSan Andrés Serrano, Enrique537Electron-Cyclotron-ResonanceChemical-Vapor-DepositionInterfaceSystem.ElectricidadElectrónica (Física)2202.03 ElectricidadThe bonding configuration, hydrogen evolution and defect content of rapid thermally annealed (RTA) SiOx:H films of different initial compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films was lost at temperatures lower than 700degreesC without any change in the oxygen to silicon ratio of films. RTA temperatures higher than 700degreesC promote a change in the Si-O-Si stretching position from the initial unannealed value to the 1070-1080 cm(-1) range independent of the initial film composition. Electron Spin Resonance (ESR) measurements show that all the films contained two types of paramagnetic defects: E' (.SidropO(3)) and D (.SidropSi(3))Annealing up to 700degreesC promotes the disappearance of the E' centre. For films where the D defect is present (all except the film with x approximate to 2), the concentration of these defects initially decreases for annealing temperatures of 400degreesC, then continuously increases for temperatures up to 700degreesC, getting a saturation value in the 10(18)-10(19) cm(-3) range for higher temperatures. ESR characterisation suggests that annealing at higher temperatures promotes the formation of a high-quality SiO2 matrix in which Si nanocrystals are formed, the D defects being located within these nanocrystals.Pergamon-Elsevier Science Ltd.Universidad Complutense de Madrid20022002-09-2620022002-09-26journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/59100reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/591002026-06-02T12:44:21Z
dc.title.none.fl_str_mv Rapid thermal annealing effects on plasma deposited SiOx : H films
title Rapid thermal annealing effects on plasma deposited SiOx : H films
spellingShingle Rapid thermal annealing effects on plasma deposited SiOx : H films
Martil De La Plaza, Ignacio
537
Electron-Cyclotron-Resonance
Chemical-Vapor-Deposition
Interface
System.
Electricidad
Electrónica (Física)
2202.03 Electricidad
title_short Rapid thermal annealing effects on plasma deposited SiOx : H films
title_full Rapid thermal annealing effects on plasma deposited SiOx : H films
title_fullStr Rapid thermal annealing effects on plasma deposited SiOx : H films
title_full_unstemmed Rapid thermal annealing effects on plasma deposited SiOx : H films
title_sort Rapid thermal annealing effects on plasma deposited SiOx : H films
dc.creator.none.fl_str_mv Martil De La Plaza, Ignacio
González Díaz, Germán
Prado Millán, Álvaro Del
San Andrés Serrano, Enrique
author Martil De La Plaza, Ignacio
author_facet Martil De La Plaza, Ignacio
González Díaz, Germán
Prado Millán, Álvaro Del
San Andrés Serrano, Enrique
author_role author
author2 González Díaz, Germán
Prado Millán, Álvaro Del
San Andrés Serrano, Enrique
author2_role author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 537
Electron-Cyclotron-Resonance
Chemical-Vapor-Deposition
Interface
System.
Electricidad
Electrónica (Física)
2202.03 Electricidad
topic 537
Electron-Cyclotron-Resonance
Chemical-Vapor-Deposition
Interface
System.
Electricidad
Electrónica (Física)
2202.03 Electricidad
description The bonding configuration, hydrogen evolution and defect content of rapid thermally annealed (RTA) SiOx:H films of different initial compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films was lost at temperatures lower than 700degreesC without any change in the oxygen to silicon ratio of films. RTA temperatures higher than 700degreesC promote a change in the Si-O-Si stretching position from the initial unannealed value to the 1070-1080 cm(-1) range independent of the initial film composition. Electron Spin Resonance (ESR) measurements show that all the films contained two types of paramagnetic defects: E' (.SidropO(3)) and D (.SidropSi(3))Annealing up to 700degreesC promotes the disappearance of the E' centre. For films where the D defect is present (all except the film with x approximate to 2), the concentration of these defects initially decreases for annealing temperatures of 400degreesC, then continuously increases for temperatures up to 700degreesC, getting a saturation value in the 10(18)-10(19) cm(-3) range for higher temperatures. ESR characterisation suggests that annealing at higher temperatures promotes the formation of a high-quality SiO2 matrix in which Si nanocrystals are formed, the D defects being located within these nanocrystals.
publishDate 2002
dc.date.none.fl_str_mv 2002
2002-09-26
2002
2002-09-26
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/59100
url https://hdl.handle.net/20.500.14352/59100
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Pergamon-Elsevier Science Ltd.
publisher.none.fl_str_mv Pergamon-Elsevier Science Ltd.
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869416210080202752
score 15.301603

Registos relacionados