Large memcapacitance and memristance at Nb:SrTiO3/La0.5Sr0.5Mn0.5Co0.5O3-d topotactic redox interface

The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspec...

Full description

Bibliographic Details
Authors: Román Acevedo, W., Van Den Bosch, C.A.M., Aguirre, M.H., Acha, C., Cavallaro, A., Ferreyra, C., Sánchez, M.J., Patrone, L., Aguadero, A., Rubi, D.
Format: article
Status:Published version
Publication Date:2020
Country:España
Institution:Universidad de Zaragoza
Repository:Zaguán. Repositorio Digital de la Universidad de Zaragoza
OAI Identifier:oai:zaguan.unizar.es:98487
Online Access:http://zaguan.unizar.es/record/98487
Access Level:Open access
Description
Summary:The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive systems. Memristors with additional functionalities such as robust memcapacitance can outperform standard devices in key aspects such as power consumption or miniaturization possibilities. In this work, we demonstrate a large memcapacitive response of a perovskite memristive interface, using the topotactic redox ability of La0.5Sr0.5Mn0.5Co0.5O3-d (LSMCO, 0 = d = 0.62). We demonstrate that the multi-mem behavior originates at the switchable n-p diode formed at the Nb:SrTiO3/LSMCO interface. We found for our Nb:SrTiO3/LSMCO/Pt devices a memcapacitive effect CHIGH/CLOW ~100 at 150 kHz. The proof-of-concept interface reported here opens a promising venue to use topotactic redox materials for disruptive nanoelectronics, with straightforward applications in neuromorphic computing technology.

Similar Items