Valence band electronic structure characterization of the rutile TiO2 (110)-(1 × 2) reconstructed surface
The electronic structure of the TiO2 (110)-(1 × 2) surface has been studied by means of angular resolved ultraviolet photoemission spectroscopy (ARUPS). The valence band dispersion along the high symmetry surface directions, [001] and [1–10], has been recorded. The experimental data show no dispersi...
| Autores: | , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión aceptada para publicación |
| Fecha de publicación: | 2013 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:dnet:digitalcsic_::4cdd4338dcba61010f1155a854f91cc8 |
| Acceso en línea: | http://hdl.handle.net/10261/168289 |
| Access Level: | acceso abierto |
| Palabra clave: | Titanium oxide Electronic structure ARUPS Defects |
| Sumario: | The electronic structure of the TiO2 (110)-(1 × 2) surface has been studied by means of angular resolved ultraviolet photoemission spectroscopy (ARUPS). The valence band dispersion along the high symmetry surface directions, [001] and [1–10], has been recorded. The experimental data show no dispersion of the band-gap Ti 3d states. However, the existence of dispersive bands along the [001] direction located at about 7 eV below the Fermi level is reported. The existence of two different contributions in the emission from the defects-related state located in the gap of the surface is univocally shown for the first time. |
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