IBIC analysis of SiC detectors developed for fusion applications

In this work, we consider a 4H-SiC detector as a plasma diagnostic system for the detection of fusion-born alpha particles in future nuclear fusion reactors. A nuclear microprobe was used to locally irradiate micrometer-sized regions of the detector with 3.5 MeV He ions to fluences from 5 × 109 to 5...

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Autores: Jiménez Ramos, María del Carmen, García López, Francisco Javier, García Osuna, Adrián, Rodríguez Ramos, Mauricio, Villalpando Barroso, A., García Muñoz, Manuel, Andrade, Eduardo, Pellegrini, Giulio, Otero Ugobono, Sofía, Godignon, Philippe, Rafí, Joan Marc, Rius, Gemma
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2020
País:España
Institución:Universidad de Sevilla (US)
Repositorio:idUS. Depósito de Investigación de la Universidad de Sevilla
OAI Identifier:oai:idus.us.es:11441/167272
Acceso en línea:https://hdl.handle.net/11441/167272
https://doi.org/10.1016/j.radphyschem.2020.109100
Access Level:acceso abierto
Palabra clave:Radiation damage
SiC detectors
Ion beam induced charge
Charge collection efficiency
Minority carrier lifetimeç
id ES_a804e45afbcaba62c33140ee96cd214a
oai_identifier_str oai:idus.us.es:11441/167272
network_acronym_str ES
network_name_str España
repository_id_str
spelling IBIC analysis of SiC detectors developed for fusion applicationsJiménez Ramos, María del CarmenGarcía López, Francisco JavierGarcía Osuna, AdriánRodríguez Ramos, MauricioVillalpando Barroso, A.García Muñoz, ManuelAndrade, EduardoPellegrini, GiulioOtero Ugobono, SofíaGodignon, PhilippeRafí, Joan MarcRius, GemmaRadiation damageSiC detectorsIon beam induced chargeCharge collection efficiencyMinority carrier lifetimeçIn this work, we consider a 4H-SiC detector as a plasma diagnostic system for the detection of fusion-born alpha particles in future nuclear fusion reactors. A nuclear microprobe was used to locally irradiate micrometer-sized regions of the detector with 3.5 MeV He ions to fluences from 5 × 109 to 5 × 1011 cm-2. Ion Beam Induced Charge (IBIC) microscopy was employed to study its degradation in Charge Collection Efficiency (CCE) and energy resolution after irradiation. At high reverse-bias voltages, both parameters remain practically unaffected for fluences up to 1 × 1011 cm-2, while a significant deterioration of the spectroscopic performance was observed above 3 × 1011 cm-2. A theoretical drift-diffusion model, in combination with Shockley-Read-Hall recombination statistics, was used to obtain the holes lifetime from the fitting of the experimental CCE values measured at different reverse voltages. Holes lifetime was found to strongly decrease with increasing particle fluence, changing from 57 ns in pristine detectors to 0.2 ns after irradiation with a fluence of 1 × 1011 cm-2.ElsevierFísica Aplicada IIFísica Atómica, Molecular y Nuclear2020info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfapplication/pdfhttps://hdl.handle.net/11441/167272https://doi.org/10.1016/j.radphyschem.2020.109100reponame:idUS. Depósito de Investigación de la Universidad de Sevillainstname:Universidad de Sevilla (US)InglésRadiation Physics and Chemistry, 177, 109100.https://doi.org/10.1016/j.radphyschem.2020.109100info:eu-repo/semantics/openAccessoai:idus.us.es:11441/1672722026-06-17T12:51:07Z
dc.title.none.fl_str_mv IBIC analysis of SiC detectors developed for fusion applications
title IBIC analysis of SiC detectors developed for fusion applications
spellingShingle IBIC analysis of SiC detectors developed for fusion applications
Jiménez Ramos, María del Carmen
Radiation damage
SiC detectors
Ion beam induced charge
Charge collection efficiency
Minority carrier lifetimeç
title_short IBIC analysis of SiC detectors developed for fusion applications
title_full IBIC analysis of SiC detectors developed for fusion applications
title_fullStr IBIC analysis of SiC detectors developed for fusion applications
title_full_unstemmed IBIC analysis of SiC detectors developed for fusion applications
title_sort IBIC analysis of SiC detectors developed for fusion applications
dc.creator.none.fl_str_mv Jiménez Ramos, María del Carmen
García López, Francisco Javier
García Osuna, Adrián
Rodríguez Ramos, Mauricio
Villalpando Barroso, A.
García Muñoz, Manuel
Andrade, Eduardo
Pellegrini, Giulio
Otero Ugobono, Sofía
Godignon, Philippe
Rafí, Joan Marc
Rius, Gemma
author Jiménez Ramos, María del Carmen
author_facet Jiménez Ramos, María del Carmen
García López, Francisco Javier
García Osuna, Adrián
Rodríguez Ramos, Mauricio
Villalpando Barroso, A.
García Muñoz, Manuel
Andrade, Eduardo
Pellegrini, Giulio
Otero Ugobono, Sofía
Godignon, Philippe
Rafí, Joan Marc
Rius, Gemma
author_role author
author2 García López, Francisco Javier
García Osuna, Adrián
Rodríguez Ramos, Mauricio
Villalpando Barroso, A.
García Muñoz, Manuel
Andrade, Eduardo
Pellegrini, Giulio
Otero Ugobono, Sofía
Godignon, Philippe
Rafí, Joan Marc
Rius, Gemma
author2_role author
author
author
author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Física Aplicada II
Física Atómica, Molecular y Nuclear
dc.subject.none.fl_str_mv Radiation damage
SiC detectors
Ion beam induced charge
Charge collection efficiency
Minority carrier lifetimeç
topic Radiation damage
SiC detectors
Ion beam induced charge
Charge collection efficiency
Minority carrier lifetimeç
description In this work, we consider a 4H-SiC detector as a plasma diagnostic system for the detection of fusion-born alpha particles in future nuclear fusion reactors. A nuclear microprobe was used to locally irradiate micrometer-sized regions of the detector with 3.5 MeV He ions to fluences from 5 × 109 to 5 × 1011 cm-2. Ion Beam Induced Charge (IBIC) microscopy was employed to study its degradation in Charge Collection Efficiency (CCE) and energy resolution after irradiation. At high reverse-bias voltages, both parameters remain practically unaffected for fluences up to 1 × 1011 cm-2, while a significant deterioration of the spectroscopic performance was observed above 3 × 1011 cm-2. A theoretical drift-diffusion model, in combination with Shockley-Read-Hall recombination statistics, was used to obtain the holes lifetime from the fitting of the experimental CCE values measured at different reverse voltages. Holes lifetime was found to strongly decrease with increasing particle fluence, changing from 57 ns in pristine detectors to 0.2 ns after irradiation with a fluence of 1 × 1011 cm-2.
publishDate 2020
dc.date.none.fl_str_mv 2020
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/11441/167272
https://doi.org/10.1016/j.radphyschem.2020.109100
url https://hdl.handle.net/11441/167272
https://doi.org/10.1016/j.radphyschem.2020.109100
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Radiation Physics and Chemistry, 177, 109100.
https://doi.org/10.1016/j.radphyschem.2020.109100
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:idUS. Depósito de Investigación de la Universidad de Sevilla
instname:Universidad de Sevilla (US)
instname_str Universidad de Sevilla (US)
reponame_str idUS. Depósito de Investigación de la Universidad de Sevilla
collection idUS. Depósito de Investigación de la Universidad de Sevilla
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869415843996106752
score 15,811543

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