Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surfa...

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Autores: Rodilla, Helena, González Sánchez, Tomás, Moschetti, Giuseppe, Grahn, Jan, Mateos López, Javier
Tipo de recurso: artículo
Fecha de publicación:2010
País:España
Institución:Universidad de Salamanca (USAL)
Repositorio:GREDOS. Repositorio Institucional de la Universidad de Salamanca
OAI Identifier:oai:gredos.usal.es:10366/122189
Acceso en línea:http://hdl.handle.net/10366/122189
Access Level:acceso abierto
Palabra clave:InAs HEMTs
Monte Carlo method
22 Física
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spelling Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTsRodilla, HelenaGonzález Sánchez, TomásMoschetti, GiuseppeGrahn, JanMateos López, JavierInAs HEMTsMonte Carlo method22 FísicaIn this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, ns, has been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cut-off frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of ns shifts the maximum of the transconductance and intrinsic cut-off frequency to higher values of drain current and improves the agreement with the experimental results.ROOTHz (FP7-243845)201320132010info:eu-repo/semantics/articleapplication/pdfhttp://hdl.handle.net/10366/122189reponame:GREDOS. Repositorio Institucional de la Universidad de Salamancainstname:Universidad de Salamanca (USAL)InglésAttribution-NonCommercial-NoDerivs 3.0 Unportedhttps://creativecommons.org/licenses/by-nc-nd/3.0/info:eu-repo/semantics/openAccessoai:gredos.usal.es:10366/1221892026-06-07T06:28:51Z
dc.title.none.fl_str_mv Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
title Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
spellingShingle Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
Rodilla, Helena
InAs HEMTs
Monte Carlo method
22 Física
title_short Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
title_full Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
title_fullStr Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
title_full_unstemmed Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
title_sort Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs
dc.creator.none.fl_str_mv Rodilla, Helena
González Sánchez, Tomás
Moschetti, Giuseppe
Grahn, Jan
Mateos López, Javier
author Rodilla, Helena
author_facet Rodilla, Helena
González Sánchez, Tomás
Moschetti, Giuseppe
Grahn, Jan
Mateos López, Javier
author_role author
author2 González Sánchez, Tomás
Moschetti, Giuseppe
Grahn, Jan
Mateos López, Javier
author2_role author
author
author
author
dc.subject.none.fl_str_mv InAs HEMTs
Monte Carlo method
22 Física
topic InAs HEMTs
Monte Carlo method
22 Física
description In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, ns, has been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cut-off frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of ns shifts the maximum of the transconductance and intrinsic cut-off frequency to higher values of drain current and improves the agreement with the experimental results.
publishDate 2010
dc.date.none.fl_str_mv 2010
2013
2013
dc.type.none.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10366/122189
url http://hdl.handle.net/10366/122189
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv Attribution-NonCommercial-NoDerivs 3.0 Unported
https://creativecommons.org/licenses/by-nc-nd/3.0/
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Attribution-NonCommercial-NoDerivs 3.0 Unported
https://creativecommons.org/licenses/by-nc-nd/3.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname:Universidad de Salamanca (USAL)
instname_str Universidad de Salamanca (USAL)
reponame_str GREDOS. Repositorio Institucional de la Universidad de Salamanca
collection GREDOS. Repositorio Institucional de la Universidad de Salamanca
repository.name.fl_str_mv
repository.mail.fl_str_mv
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