Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials

Differential scanning calorimetry (DSC) was used to study the dehydrogenation processes that take place in three hydrogenated amorphous silicon materials: nanoparticles, polymorphous silicon, and conventional device-quality amorphous silicon. Comparison of DSC thermograms with evolved gas analysis (...

Descripción completa

Detalles Bibliográficos
Autores: Roura Grabulosa, Pere, Farjas Silva, Jordi, Rath, Chandana, Serra-Miralles, J., Bertrán Serra, Enric, Roca i Cabarrocas, Pere
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2006
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:10256/7695
Acceso en línea:http://hdl.handle.net/10256/7695
Access Level:acceso abierto
Palabra clave:Ciència dels materials
Materials science
Semiconductors amorfs
Amorphous semiconductors
Capes fines
Thin films
id ES_a605e737e7cde9b71d0d4e7cd46993f2
oai_identifier_str oai:recercat.cat:10256/7695
network_acronym_str ES
network_name_str España
repository_id_str
spelling Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materialsRoura Grabulosa, PereFarjas Silva, JordiRath, ChandanaSerra-Miralles, J.Bertrán Serra, EnricRoca i Cabarrocas, PereCiència dels materialsMaterials scienceSemiconductors amorfsAmorphous semiconductorsCapes finesThin filmsDifferential scanning calorimetry (DSC) was used to study the dehydrogenation processes that take place in three hydrogenated amorphous silicon materials: nanoparticles, polymorphous silicon, and conventional device-quality amorphous silicon. Comparison of DSC thermograms with evolved gas analysis (EGA) has led to the identification of four dehydrogenation processes arising from polymeric chains (A), SiH groups at the surfaces of internal voids (A'), SiH groups at interfaces (B), and in the bulk (C). All of them are slightly exothermic with enthalpies below 50 meV/H atoms , indicating that, after dissociation of any SiH group, most dangling bonds recombine. The kinetics of the three low-temperature processes [with DSC peak temperatures at around 320 (A),360 (A'), and 430°C (B)] exhibit a kinetic-compensation effect characterized by a linea relationship between the activation entropy and enthalpy, which constitutes their signature. Their Si-H bond-dissociation energies have been determined to be E (Si-H)0=3.14 (A), 3.19 (A'), and 3.28 eV (B). In these cases it was possible to extract the formation energy E(DB) of the dangling bonds that recombine after Si-H bond breaking [0.97 (A), 1.05 (A'), and 1.12 (B)]. It is concluded that E(DB) increases with the degree of confinement and that E(DB)>1.10 eV for the isolated dangling bond in the bulk. After Si-H dissociation and for the low-temperature processes, hydrogen is transported in molecular form and a low relaxation of the silicon network is promoted. This is in contrast to the high-temperature process for which the diffusion of H in atomic form induces a substantial lattice relaxation that, for the conventional amorphous sample, releases energy of around 600 meV per H atom. It is argued that the density of sites in the Si network for H trapping diminishes during atomic diffusionAmerican Physical Society2006info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10256/7695http://hdl.handle.net/10256/7695© Physical Review B, 2006, vol. 73, núm 8, p. 085203-1-085203-15Articles publicats (D-F)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)Inglésinfo:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.73.085203info:eu-repo/semantics/altIdentifier/issn/1098-0121info:eu-repo/semantics/altIdentifier/eissn/1550-235XTots els drets reservatsinfo:eu-repo/semantics/openAccessoai:recercat.cat:10256/76952026-05-29T05:05:01Z
dc.title.none.fl_str_mv Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials
title Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials
spellingShingle Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials
Roura Grabulosa, Pere
Ciència dels materials
Materials science
Semiconductors amorfs
Amorphous semiconductors
Capes fines
Thin films
title_short Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials
title_full Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials
title_fullStr Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials
title_full_unstemmed Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials
title_sort Calorimetry of dehydrogenation and dangling-bond recombination in several hydrogenated amorphous silicon materials
dc.creator.none.fl_str_mv Roura Grabulosa, Pere
Farjas Silva, Jordi
Rath, Chandana
Serra-Miralles, J.
Bertrán Serra, Enric
Roca i Cabarrocas, Pere
author Roura Grabulosa, Pere
author_facet Roura Grabulosa, Pere
Farjas Silva, Jordi
Rath, Chandana
Serra-Miralles, J.
Bertrán Serra, Enric
Roca i Cabarrocas, Pere
author_role author
author2 Farjas Silva, Jordi
Rath, Chandana
Serra-Miralles, J.
Bertrán Serra, Enric
Roca i Cabarrocas, Pere
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Ciència dels materials
Materials science
Semiconductors amorfs
Amorphous semiconductors
Capes fines
Thin films
topic Ciència dels materials
Materials science
Semiconductors amorfs
Amorphous semiconductors
Capes fines
Thin films
description Differential scanning calorimetry (DSC) was used to study the dehydrogenation processes that take place in three hydrogenated amorphous silicon materials: nanoparticles, polymorphous silicon, and conventional device-quality amorphous silicon. Comparison of DSC thermograms with evolved gas analysis (EGA) has led to the identification of four dehydrogenation processes arising from polymeric chains (A), SiH groups at the surfaces of internal voids (A'), SiH groups at interfaces (B), and in the bulk (C). All of them are slightly exothermic with enthalpies below 50 meV/H atoms , indicating that, after dissociation of any SiH group, most dangling bonds recombine. The kinetics of the three low-temperature processes [with DSC peak temperatures at around 320 (A),360 (A'), and 430°C (B)] exhibit a kinetic-compensation effect characterized by a linea relationship between the activation entropy and enthalpy, which constitutes their signature. Their Si-H bond-dissociation energies have been determined to be E (Si-H)0=3.14 (A), 3.19 (A'), and 3.28 eV (B). In these cases it was possible to extract the formation energy E(DB) of the dangling bonds that recombine after Si-H bond breaking [0.97 (A), 1.05 (A'), and 1.12 (B)]. It is concluded that E(DB) increases with the degree of confinement and that E(DB)>1.10 eV for the isolated dangling bond in the bulk. After Si-H dissociation and for the low-temperature processes, hydrogen is transported in molecular form and a low relaxation of the silicon network is promoted. This is in contrast to the high-temperature process for which the diffusion of H in atomic form induces a substantial lattice relaxation that, for the conventional amorphous sample, releases energy of around 600 meV per H atom. It is argued that the density of sites in the Si network for H trapping diminishes during atomic diffusion
publishDate 2006
dc.date.none.fl_str_mv 2006
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10256/7695
http://hdl.handle.net/10256/7695
url http://hdl.handle.net/10256/7695
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.73.085203
info:eu-repo/semantics/altIdentifier/issn/1098-0121
info:eu-repo/semantics/altIdentifier/eissn/1550-235X
dc.rights.none.fl_str_mv Tots els drets reservats
info:eu-repo/semantics/openAccess
rights_invalid_str_mv Tots els drets reservats
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv © Physical Review B, 2006, vol. 73, núm 8, p. 085203-1-085203-15
Articles publicats (D-F)
reponame:Recercat. Dipósit de la Recerca de Catalunya
instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
instname_str Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
reponame_str Recercat. Dipósit de la Recerca de Catalunya
collection Recercat. Dipósit de la Recerca de Catalunya
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869415663699755008
score 15,81155

Similares en LA Referencia