Colloidal Ag2SbBiSe4 nanocrystals as n-type thermoelectric materials

Materials with low intrinsic thermal conductivity are essential for the development of high-performance thermoelectric devices. At the same time, the solution processing of these materials may enable the cost-effective production of the devices. Herein, we detail a high-yield and scalable colloidal...

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Detalles Bibliográficos
Autores: Nan, Bingfei|||0000-0002-7128-6056, Yu, Jing|||0000-0002-7620-745X, Li, Mengyao|||0000-0002-9082-7938, Huang, Chen, Chen, Hongyu, Zhang, Hao, Chang, Cheng|||0000-0002-9515-4277, Li, Junshan|||0000-0002-1482-1972, Song, Xuan, Guo, Kai|||0000-0002-8486-4185, Arbiol i Cobos, Jordi|||0000-0002-0695-1726, Cabot i Codina, Andreu|||0000-0002-7533-3251
Tipo de recurso: artículo
Fecha de publicación:2025
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:308868
Acceso en línea:https://ddd.uab.cat/record/308868
https://dx.doi.org/urn:doi:10.1016/j.jcis.2024.10.035
Access Level:acceso abierto
Palabra clave:Thermoelectricity
Quaternary chalcogenide
Ag2BiSbSe4
Nanocrystal
Modulation doping
Hot press
Descripción
Sumario:Materials with low intrinsic thermal conductivity are essential for the development of high-performance thermoelectric devices. At the same time, the solution processing of these materials may enable the cost-effective production of the devices. Herein, we detail a high-yield and scalable colloidal synthesis route to produce AgSbBiSe nanocrystals (NCs) using amine-thiol-Se chemistry. The quaternary chalcogenide material is consolidated by a rapid hot-press maintaining the cubic crystalline structure. Transport measurements confirm that n-type AgSbBiSe exhibits an inherently ultralow lattice thermal conductivity of ca. 0.34 W mK at 760 K. Moreover, a modulation doping strategy based on the blending of semiconductor AgSbBiSe and metallic Sn NCs is demonstrated to control the charge carrier concentration in the final composite material. The introduction of Sn nanodomains additionally blocks phonon propagation thus contributing to reducing the thermal conductivity of the final material. Ultimately, a peak thermoelectric figure of merit value of 0.64 at 760 K is achieved for n-type AgSbBiSe-Sn nanocomposites that also demonstrate a notable Vickers hardness of 185 HV.