Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon

High-dose carbon-ion-implanted Si samples have been analyzed by infrared spectroscopy, Raman scattering, and x-ray photoelectron spectroscopy (XPS) correlated with transmission electron microscopy. Samples were implanted at room temperature and 500°C with doses between 1017 and 1018 C+/cm2. Some of...

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Detalhes bibliográficos
Autores: Serre, Christophe, Pérez Rodríguez, Alejandro, Romano Rodríguez, Albert, Morante i Lleonart, Joan Ramon, Kögler, Reinhard, Skorupa, Wolfgang
Formato: artículo
Estado:Versión publicada
Fecha de publicación:1995
País:España
Recursos:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/24726
Acesso em linha:https://hdl.handle.net/2445/24726
Access Level:acceso abierto
Palavra-chave:Cristal·lografia
Espectroscòpia
Crystallography
Spectrum analysis
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spelling Spectroscopic characterization of phases formed by high-dose carbon ion implantation in siliconSerre, ChristophePérez Rodríguez, AlejandroRomano Rodríguez, AlbertMorante i Lleonart, Joan RamonKögler, ReinhardSkorupa, WolfgangCristal·lografiaEspectroscòpiaCrystallographySpectrum analysisHigh-dose carbon-ion-implanted Si samples have been analyzed by infrared spectroscopy, Raman scattering, and x-ray photoelectron spectroscopy (XPS) correlated with transmission electron microscopy. Samples were implanted at room temperature and 500°C with doses between 1017 and 1018 C+/cm2. Some of the samples were implanted at room temperature with the surface covered by a capping oxide layer. Implanting at room temperature leads to the formation of a surface carbon-rich amorphous layer, in addition to the buried implanted layer. The dependence of this layer on the capping oxide suggests this layer to be determined by carbon migration toward the surface, rather than surface contamination. Implanting at 500°C, no carbon-rich surface layer is observed and the SiC buried layer is formed by crystalline ßSiC precipitates aligned with the Si matrix. The concentration of SiC in this region as measured by XPS is higher than for the room-temperature implantation.American Institute of Physics1995info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/24726Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.358714Journal of Applied Physics, 1995, vol. 77, núm. 7, p. 2978-2984http://dx.doi.org/10.1063/1.358714(c) American Institute of Physics, 1995info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/247262026-05-27T06:46:51Z
dc.title.none.fl_str_mv Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon
title Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon
spellingShingle Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon
Serre, Christophe
Cristal·lografia
Espectroscòpia
Crystallography
Spectrum analysis
title_short Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon
title_full Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon
title_fullStr Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon
title_full_unstemmed Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon
title_sort Spectroscopic characterization of phases formed by high-dose carbon ion implantation in silicon
dc.creator.none.fl_str_mv Serre, Christophe
Pérez Rodríguez, Alejandro
Romano Rodríguez, Albert
Morante i Lleonart, Joan Ramon
Kögler, Reinhard
Skorupa, Wolfgang
author Serre, Christophe
author_facet Serre, Christophe
Pérez Rodríguez, Alejandro
Romano Rodríguez, Albert
Morante i Lleonart, Joan Ramon
Kögler, Reinhard
Skorupa, Wolfgang
author_role author
author2 Pérez Rodríguez, Alejandro
Romano Rodríguez, Albert
Morante i Lleonart, Joan Ramon
Kögler, Reinhard
Skorupa, Wolfgang
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Cristal·lografia
Espectroscòpia
Crystallography
Spectrum analysis
topic Cristal·lografia
Espectroscòpia
Crystallography
Spectrum analysis
description High-dose carbon-ion-implanted Si samples have been analyzed by infrared spectroscopy, Raman scattering, and x-ray photoelectron spectroscopy (XPS) correlated with transmission electron microscopy. Samples were implanted at room temperature and 500°C with doses between 1017 and 1018 C+/cm2. Some of the samples were implanted at room temperature with the surface covered by a capping oxide layer. Implanting at room temperature leads to the formation of a surface carbon-rich amorphous layer, in addition to the buried implanted layer. The dependence of this layer on the capping oxide suggests this layer to be determined by carbon migration toward the surface, rather than surface contamination. Implanting at 500°C, no carbon-rich surface layer is observed and the SiC buried layer is formed by crystalline ßSiC precipitates aligned with the Si matrix. The concentration of SiC in this region as measured by XPS is higher than for the room-temperature implantation.
publishDate 1995
dc.date.none.fl_str_mv 1995
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/24726
url https://hdl.handle.net/2445/24726
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Reproducció del document publicat a: http://dx.doi.org/10.1063/1.358714
Journal of Applied Physics, 1995, vol. 77, núm. 7, p. 2978-2984
http://dx.doi.org/10.1063/1.358714
dc.rights.none.fl_str_mv (c) American Institute of Physics, 1995
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) American Institute of Physics, 1995
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300719

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