Si3N4 single-crystal nanowires grown from silicon micro- and nanoparticles near the threshold of passive oxidation
A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Fecha de publicación: | 2005 |
| País: | España |
| Institución: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:10256/3212 |
| Acceso en línea: | http://hdl.handle.net/10256/3212 |
| Access Level: | acceso abierto |
| Palabra clave: | Materials nanoestructurals Nanopartícules Nitrurs Semiconductors Silici -- Compostos Silici -- Oxidació Nanoparticles Nanostructure materials Nitrides Silicon -- Oxidation Silicon compounds |
| Sumario: | A simple and most promising oxide-assisted catalyst-free method is used to prepare silicon nitride nanowires that give rise to high yield in a short time. After a brief analysis of the state of the art, we reveal the crucial role played by the oxygen partial pressure: when oxygen partial pressure is slightly below the threshold of passive oxidation, a high yield inhibiting the formation of any silica layer covering the nanowires occurs and thanks to the synthesis temperature one can control nanowire dimensions |
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