Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6
Two-and three-dimensional topological insulators are the key materials for the future nanoelectronic and spintronic devices and quantum computers. By means of angle-and spin-resolved photoemission spectroscopy we study the electronic and spin structure of the Bi-bilayer/3D topological insulator in q...
| Autores: | , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2017 |
| País: | España |
| Institución: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/177229 |
| Acceso en línea: | http://hdl.handle.net/10261/177229 |
| Access Level: | acceso abierto |
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Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6Klimovskikh, Ilya I.Sostina, DariaPetukhov, Anatoly E.Rybkin, Artem G.Eremeev, Sergey V.Chulkov, Eugene V.Tereshchenko, Oleg E.Kokh, Konstantin A.Shikin, Alexander M.Two-and three-dimensional topological insulators are the key materials for the future nanoelectronic and spintronic devices and quantum computers. By means of angle-and spin-resolved photoemission spectroscopy we study the electronic and spin structure of the Bi-bilayer/3D topological insulator in quantum tunneling regime formed under the short annealing of BiTeSe Owing to the temperature-induced restructuring of the topological insulator's surface quintuple layers, the hole-like spin-split Bi-bilayer bands and the parabolic electronic-like state are observed instead of the Dirac cone. Scanning Tunneling Microscopy and X-ray Photoemission Spectroscopy measurements reveal the appearance of the Bi terraces at the surface under the annealing. The experimental results are supported by density functional theory calculations, predicting the spin-polarized Bi-bilayer bands interacting with the quintuple-layers-derived states. Such an easily formed heterostructure promises exciting applications in spin transport devices and low-energy electronics.The work was partially supported by grant of Saint Petersburg State University for scientific investigations (No 15.61.202.2015). We acknowledge the financial support of the University of Basque Country UPV/EHU (Grant No. GIC07-IT-756-13), the Departamento de Educación del Gobierno Vasco and the Spanish Ministerio de Ciencia e Innovación (Grant No. FIS2010-19609-C02-01), the Spanish Ministry of Economy and Competitiveness MINECO (Grant No. FIS2013-48286-C2-1-P) and the Tomsk State University Competitiveness Improvement Program.Peer ReviewedNature Publishing GroupUniversidad del País VascoEusko JaurlaritzaTomsk State UniversityMinisterio de Ciencia e Innovación (España)Saint Petersburg State UniversityMinisterio de Economía y Competitividad (España)Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]2019201920172019info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionhttp://hdl.handle.net/10261/177229reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FIS2013-48286-C2-1-Phttps://doi.org/10.1038/srep45797Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1772292026-05-22T06:33:51Z |
| dc.title.none.fl_str_mv |
Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6 |
| title |
Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6 |
| spellingShingle |
Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6 Klimovskikh, Ilya I. |
| title_short |
Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6 |
| title_full |
Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6 |
| title_fullStr |
Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6 |
| title_full_unstemmed |
Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6 |
| title_sort |
Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6 |
| dc.creator.none.fl_str_mv |
Klimovskikh, Ilya I. Sostina, Daria Petukhov, Anatoly E. Rybkin, Artem G. Eremeev, Sergey V. Chulkov, Eugene V. Tereshchenko, Oleg E. Kokh, Konstantin A. Shikin, Alexander M. |
| author |
Klimovskikh, Ilya I. |
| author_facet |
Klimovskikh, Ilya I. Sostina, Daria Petukhov, Anatoly E. Rybkin, Artem G. Eremeev, Sergey V. Chulkov, Eugene V. Tereshchenko, Oleg E. Kokh, Konstantin A. Shikin, Alexander M. |
| author_role |
author |
| author2 |
Sostina, Daria Petukhov, Anatoly E. Rybkin, Artem G. Eremeev, Sergey V. Chulkov, Eugene V. Tereshchenko, Oleg E. Kokh, Konstantin A. Shikin, Alexander M. |
| author2_role |
author author author author author author author author |
| dc.contributor.none.fl_str_mv |
Universidad del País Vasco Eusko Jaurlaritza Tomsk State University Ministerio de Ciencia e Innovación (España) Saint Petersburg State University Ministerio de Economía y Competitividad (España) Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72] |
| description |
Two-and three-dimensional topological insulators are the key materials for the future nanoelectronic and spintronic devices and quantum computers. By means of angle-and spin-resolved photoemission spectroscopy we study the electronic and spin structure of the Bi-bilayer/3D topological insulator in quantum tunneling regime formed under the short annealing of BiTeSe Owing to the temperature-induced restructuring of the topological insulator's surface quintuple layers, the hole-like spin-split Bi-bilayer bands and the parabolic electronic-like state are observed instead of the Dirac cone. Scanning Tunneling Microscopy and X-ray Photoemission Spectroscopy measurements reveal the appearance of the Bi terraces at the surface under the annealing. The experimental results are supported by density functional theory calculations, predicting the spin-polarized Bi-bilayer bands interacting with the quintuple-layers-derived states. Such an easily formed heterostructure promises exciting applications in spin transport devices and low-energy electronics. |
| publishDate |
2017 |
| dc.date.none.fl_str_mv |
2017 2019 2019 2019 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article http://purl.org/coar/resource_type/c_6501 Publisher's version info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
http://hdl.handle.net/10261/177229 |
| url |
http://hdl.handle.net/10261/177229 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
#PLACEHOLDER_PARENT_METADATA_VALUE# info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/FIS2013-48286-C2-1-P https://doi.org/10.1038/srep45797 Sí |
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info:eu-repo/semantics/openAccess |
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openAccess |
| dc.publisher.none.fl_str_mv |
Nature Publishing Group |
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Nature Publishing Group |
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reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC instname:Consejo Superior de Investigaciones Científicas (CSIC) |
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Consejo Superior de Investigaciones Científicas (CSIC) |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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DIGITAL.CSIC. Repositorio Institucional del CSIC |
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