V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells

Masmitjà Rusiñol, Gerard|||0000-0001-9541-7586; Gerling Sarabia, Luis Guillermo; Ortega Villasclaras, Pablo Rafael|||0000-0001-6577-614X; Puigdollers i González, Joaquim|||0000-0002-1834-2565; Martín García, Isidro|||0000-0001-8833-9057; Voz Sánchez, Cristóbal|||0000-0002-0320-9606; Alcubilla González, Ramón|||0000-0003-4827-4513

V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells

Over the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use of both a thin and high quality intrinsic amorphous Si layer and TCO (Transpare...

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Autores:	Masmitjà Rusiñol, Gerard\|\|\|0000-0001-9541-7586, Gerling Sarabia, Luis Guillermo, Ortega Villasclaras, Pablo Rafael\|\|\|0000-0001-6577-614X, Puigdollers i González, Joaquim\|\|\|0000-0002-1834-2565, Martín García, Isidro\|\|\|0000-0001-8833-9057, Voz Sánchez, Cristóbal\|\|\|0000-0002-0320-9606, Alcubilla González, Ramón\|\|\|0000-0003-4827-4513
Tipo de recurso:	artículo
Fecha de publicación:	2017
País:	España
Institución:	Universitat Politècnica de Catalunya (UPC)
Repositorio:	UPCommons. Portal del coneixement obert de la UPC
Idioma:	inglés
OAI Identifier:	oai:upcommons.upc.edu:2117/116632
Acceso en línea:	https://hdl.handle.net/2117/116632 https://dx.doi.org/10.1039/C7TA01959A
Access Level:	acceso abierto
Palabra clave:	Solar cells Bateries solars Cèl·lules solars Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars

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network_acronym_str	ES
network_name_str	España
repository_id_str
spelling	V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cellsMasmitjà Rusiñol, Gerard\|\|\|0000-0001-9541-7586Gerling Sarabia, Luis GuillermoOrtega Villasclaras, Pablo Rafael\|\|\|0000-0001-6577-614XPuigdollers i González, Joaquim\|\|\|0000-0002-1834-2565Martín García, Isidro\|\|\|0000-0001-8833-9057Voz Sánchez, Cristóbal\|\|\|0000-0002-0320-9606Alcubilla González, Ramón\|\|\|0000-0003-4827-4513Solar cellsBateries solarsCèl·lules solarsÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solarsOver the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use of both a thin and high quality intrinsic amorphous Si layer and TCO (Transparent Conductive Oxide) films. In this work, we explore the use of vanadium suboxide (V2Ox) capped with a thin Ni layer as a hole transport layer trying to avoid both the intrinsic amorphous silicon layer and the TCO contact layer. Obtained figures of merit for Ni/V2Ox/c-Si(n) test samples are saturation current densities of 175 fA cm-2 and specific contact resistance below 115 mO cm2 on 40 nm thick V2Ox layers. Finally, the Ni/V2Ox stack is used with an interdigitated back-contacted c-Si(n) solar cell architecture fully fabricated at low temperatures. An open circuit voltage, a short circuit current and a fill factor of 656 mV, 40.7 mA cm-2 and 74.0% are achieved, respectively, leading to a power conversion efficiency of 19.7%. These results confirm the high potential of Ni/V2Ox stacks as hole-selective contacts on crystalline silicon photovoltaics.Royal Society of Chemistry20172017-04-0620182018-04-24journal articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/2117/116632https://dx.doi.org/10.1039/C7TA01959Areponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2info:eu-repo/semantics/openAccessoai:upcommons.upc.edu:2117/1166322026-05-27T15:37:01Z
dc.title.none.fl_str_mv	V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
title	V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
spellingShingle	V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells Masmitjà Rusiñol, Gerard\|\|\|0000-0001-9541-7586 Solar cells Bateries solars Cèl·lules solars Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
title_short	V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
title_full	V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
title_fullStr	V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
title_full_unstemmed	V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
title_sort	V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells
dc.creator.none.fl_str_mv	Masmitjà Rusiñol, Gerard\|\|\|0000-0001-9541-7586 Gerling Sarabia, Luis Guillermo Ortega Villasclaras, Pablo Rafael\|\|\|0000-0001-6577-614X Puigdollers i González, Joaquim\|\|\|0000-0002-1834-2565 Martín García, Isidro\|\|\|0000-0001-8833-9057 Voz Sánchez, Cristóbal\|\|\|0000-0002-0320-9606 Alcubilla González, Ramón\|\|\|0000-0003-4827-4513
author	Masmitjà Rusiñol, Gerard\|\|\|0000-0001-9541-7586
author_facet	Masmitjà Rusiñol, Gerard\|\|\|0000-0001-9541-7586 Gerling Sarabia, Luis Guillermo Ortega Villasclaras, Pablo Rafael\|\|\|0000-0001-6577-614X Puigdollers i González, Joaquim\|\|\|0000-0002-1834-2565 Martín García, Isidro\|\|\|0000-0001-8833-9057 Voz Sánchez, Cristóbal\|\|\|0000-0002-0320-9606 Alcubilla González, Ramón\|\|\|0000-0003-4827-4513
author_role	author
author2	Gerling Sarabia, Luis Guillermo Ortega Villasclaras, Pablo Rafael\|\|\|0000-0001-6577-614X Puigdollers i González, Joaquim\|\|\|0000-0002-1834-2565 Martín García, Isidro\|\|\|0000-0001-8833-9057 Voz Sánchez, Cristóbal\|\|\|0000-0002-0320-9606 Alcubilla González, Ramón\|\|\|0000-0003-4827-4513
author2_role	author author author author author author
dc.subject.none.fl_str_mv	Solar cells Bateries solars Cèl·lules solars Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
topic	Solar cells Bateries solars Cèl·lules solars Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
description	Over the last few years, transition metal oxide layers have been proposed as selective contacts both for electrons and holes and successfully applied to silicon solar cells. However, better published results need the use of both a thin and high quality intrinsic amorphous Si layer and TCO (Transparent Conductive Oxide) films. In this work, we explore the use of vanadium suboxide (V2Ox) capped with a thin Ni layer as a hole transport layer trying to avoid both the intrinsic amorphous silicon layer and the TCO contact layer. Obtained figures of merit for Ni/V2Ox/c-Si(n) test samples are saturation current densities of 175 fA cm-2 and specific contact resistance below 115 mO cm2 on 40 nm thick V2Ox layers. Finally, the Ni/V2Ox stack is used with an interdigitated back-contacted c-Si(n) solar cell architecture fully fabricated at low temperatures. An open circuit voltage, a short circuit current and a fill factor of 656 mV, 40.7 mA cm-2 and 74.0% are achieved, respectively, leading to a power conversion efficiency of 19.7%. These results confirm the high potential of Ni/V2Ox stacks as hole-selective contacts on crystalline silicon photovoltaics.
publishDate	2017
dc.date.none.fl_str_mv	2017 2017-04-06 2018 2018-04-24
dc.type.none.fl_str_mv	journal article http://purl.org/coar/resource_type/c_6501 AM http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv	info:eu-repo/semantics/article
format	article
dc.identifier.none.fl_str_mv	https://hdl.handle.net/2117/116632 https://dx.doi.org/10.1039/C7TA01959A
url	https://hdl.handle.net/2117/116632 https://dx.doi.org/10.1039/C7TA01959A
dc.language.none.fl_str_mv	Inglés eng
language_invalid_str_mv	Inglés
language	eng
dc.rights.none.fl_str_mv	open access http://purl.org/coar/access_right/c_abf2
dc.rights.openaire.fl_str_mv	info:eu-repo/semantics/openAccess
rights_invalid_str_mv	open access http://purl.org/coar/access_right/c_abf2
eu_rights_str_mv	openAccess
dc.format.none.fl_str_mv	application/pdf
dc.publisher.none.fl_str_mv	Royal Society of Chemistry
publisher.none.fl_str_mv	Royal Society of Chemistry
dc.source.none.fl_str_mv	reponame:UPCommons. Portal del coneixement obert de la UPC instname:Universitat Politècnica de Catalunya (UPC)
instname_str	Universitat Politècnica de Catalunya (UPC)
reponame_str	UPCommons. Portal del coneixement obert de la UPC
collection	UPCommons. Portal del coneixement obert de la UPC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score	15.301603

V2Ox-based hole-selective contacts for c-Si interdigitated back-contacted solar cells

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