Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films

Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO f...

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Autores: Carreras Seguí, Paz, Antony, Aldrin, Rojas Tarazona, Fredy E., Bertomeu i Balagueró, Joan
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2011
País:España
Institución:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/47144
Acceso en línea:https://hdl.handle.net/2445/47144
Access Level:acceso abierto
Palabra clave:Pel·lícules fines
Metall-òxid-semiconductors
Cèl·lules solars
Optoelectrònica
Transistors
Energia fotovoltaica
Òxid de zinc
Thin films
Metal oxide semiconductors
Solar cells
Optoelectronics
Photovoltaic power generation
Zinc oxide
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repository_id_str
spelling Electrical and optical properties of Zn-In-Sn-O transparent conducting thin filmsCarreras Seguí, PazAntony, AldrinRojas Tarazona, Fredy E.Bertomeu i Balagueró, JoanPel·lícules finesMetall-òxid-semiconductorsCèl·lules solarsOptoelectrònicaTransistorsEnergia fotovoltaicaÒxid de zincThin filmsMetal oxide semiconductorsSolar cellsOptoelectronicsTransistorsPhotovoltaic power generationZinc oxideIndium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron co-sputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn-In-Sn-O (ZITO) with improved electrical and optical properties have been achieved. The samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67%. The optical, electrical and morphological properties have been thoroughly studied. The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17% zinc content ratio showed the lowest resistivity (6.6 × 10 - 4 Ω cm) and the highest transmittance (above 80% in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.Elsevier B.V.2011info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/47144Articles publicats en revistes (Física Aplicada)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2011.06.078Thin Solid Films, 2011, vol. 520, num. 4, p. 1222-1227http://dx.doi.org/10.1016/j.tsf.2011.06.078(c) Elsevier B.V., 2011info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/471442026-05-27T06:46:51Z
dc.title.none.fl_str_mv Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films
title Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films
spellingShingle Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films
Carreras Seguí, Paz
Pel·lícules fines
Metall-òxid-semiconductors
Cèl·lules solars
Optoelectrònica
Transistors
Energia fotovoltaica
Òxid de zinc
Thin films
Metal oxide semiconductors
Solar cells
Optoelectronics
Transistors
Photovoltaic power generation
Zinc oxide
title_short Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films
title_full Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films
title_fullStr Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films
title_full_unstemmed Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films
title_sort Electrical and optical properties of Zn-In-Sn-O transparent conducting thin films
dc.creator.none.fl_str_mv Carreras Seguí, Paz
Antony, Aldrin
Rojas Tarazona, Fredy E.
Bertomeu i Balagueró, Joan
author Carreras Seguí, Paz
author_facet Carreras Seguí, Paz
Antony, Aldrin
Rojas Tarazona, Fredy E.
Bertomeu i Balagueró, Joan
author_role author
author2 Antony, Aldrin
Rojas Tarazona, Fredy E.
Bertomeu i Balagueró, Joan
author2_role author
author
author
dc.subject.none.fl_str_mv Pel·lícules fines
Metall-òxid-semiconductors
Cèl·lules solars
Optoelectrònica
Transistors
Energia fotovoltaica
Òxid de zinc
Thin films
Metal oxide semiconductors
Solar cells
Optoelectronics
Transistors
Photovoltaic power generation
Zinc oxide
topic Pel·lícules fines
Metall-òxid-semiconductors
Cèl·lules solars
Optoelectrònica
Transistors
Energia fotovoltaica
Òxid de zinc
Thin films
Metal oxide semiconductors
Solar cells
Optoelectronics
Transistors
Photovoltaic power generation
Zinc oxide
description Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron co-sputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn-In-Sn-O (ZITO) with improved electrical and optical properties have been achieved. The samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67%. The optical, electrical and morphological properties have been thoroughly studied. The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17% zinc content ratio showed the lowest resistivity (6.6 × 10 - 4 Ω cm) and the highest transmittance (above 80% in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.
publishDate 2011
dc.date.none.fl_str_mv 2011
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/47144
url https://hdl.handle.net/2445/47144
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: http://dx.doi.org/10.1016/j.tsf.2011.06.078
Thin Solid Films, 2011, vol. 520, num. 4, p. 1222-1227
http://dx.doi.org/10.1016/j.tsf.2011.06.078
dc.rights.none.fl_str_mv (c) Elsevier B.V., 2011
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Elsevier B.V., 2011
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Elsevier B.V.
publisher.none.fl_str_mv Elsevier B.V.
dc.source.none.fl_str_mv Articles publicats en revistes (Física Aplicada)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15,300719

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