A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications

Capacitive Metal-Insulator-Semiconductor structures with graphene as interfacial layer between the HfO dielectric and the top electrode have been fabricated and investigated at device level and at the nanoscale with Conductive Atomic Force Microscope. In particular, their electrical properties and v...

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Autores: Claramunt, Sergi|||0000-0002-2888-7825, Ruiz Flores, Ana|||0000-0002-2475-7353, Wu, Q., Porti i Pujal, Marc|||0000-0001-7438-3823, Nafria, Montserrat|||0000-0002-9549-2890, Aymerich Humet, Xavier|||0000-0002-5874-6257
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:249448
Acceso en línea:https://ddd.uab.cat/record/249448
https://dx.doi.org/urn:doi:10.1016/j.sse.2021.108080
Access Level:acceso abierto
Palabra clave:ReRAM
Graphene
Non-volatile memory
CAFM
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spelling A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applicationsClaramunt, Sergi|||0000-0002-2888-7825Ruiz Flores, Ana|||0000-0002-2475-7353Wu, Q.Porti i Pujal, Marc|||0000-0001-7438-3823Nafria, Montserrat|||0000-0002-9549-2890Aymerich Humet, Xavier|||0000-0002-5874-6257ReRAMGrapheneNon-volatile memoryCAFMCapacitive Metal-Insulator-Semiconductor structures with graphene as interfacial layer between the HfO dielectric and the top electrode have been fabricated and investigated at device level and at the nanoscale with Conductive Atomic Force Microscope. In particular, their electrical properties and variability have been compared to devices without graphene to evaluate their feasibility as ReRAM devices. At device level, we observe that, when graphene is present as an intercalated layer, several resistive switching cycles can be measured, meanwhile the standard structures without graphene do not show resistive switching behavior. Nanoscale analysis showed that the graphene layer prevents the microstructural irreversible damage of the oxide material during a forming process. Therefore, graphene somehow protects the structure during the CF formation. This protection would explain the observation of RS of the devices with intercalated graphene. 22021-01-0120212021-01-01Articlehttp://purl.org/coar/resource_type/c_6501AMhttp://purl.org/coar/version/c_ab4af688f83e57aainfo:eu-repo/semantics/articleapplication/pdfhttps://ddd.uab.cat/record/249448https://dx.doi.org/urn:doi:10.1016/j.sse.2021.108080reponame:Dipòsit Digital de Documents de la UABinstname:Universitat Autònoma de BarcelonaInglésengAgencia Estatal de Investigación https://doi.org/10.13039/501100011033 TEC2016-75151-C3-1-Ropen accesshttp://purl.org/coar/access_right/c_abf2Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, i la comunicació pública de l'obra, sempre que no sigui amb finalitats comercials, i sempre que es reconegui l'autoria de l'obra original. No es permet la creació d'obres derivades.https://creativecommons.org/licenses/by-nc-nd/4.0/info:eu-repo/semantics/openAccessoai:ddd.uab.cat:2494482026-06-06T12:50:31Z
dc.title.none.fl_str_mv A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications
title A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications
spellingShingle A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications
Claramunt, Sergi|||0000-0002-2888-7825
ReRAM
Graphene
Non-volatile memory
CAFM
title_short A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications
title_full A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications
title_fullStr A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications
title_full_unstemmed A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications
title_sort A CAFM and device level study of MIS structures with graphene as interfacial layer for ReRAM applications
dc.creator.none.fl_str_mv Claramunt, Sergi|||0000-0002-2888-7825
Ruiz Flores, Ana|||0000-0002-2475-7353
Wu, Q.
Porti i Pujal, Marc|||0000-0001-7438-3823
Nafria, Montserrat|||0000-0002-9549-2890
Aymerich Humet, Xavier|||0000-0002-5874-6257
author Claramunt, Sergi|||0000-0002-2888-7825
author_facet Claramunt, Sergi|||0000-0002-2888-7825
Ruiz Flores, Ana|||0000-0002-2475-7353
Wu, Q.
Porti i Pujal, Marc|||0000-0001-7438-3823
Nafria, Montserrat|||0000-0002-9549-2890
Aymerich Humet, Xavier|||0000-0002-5874-6257
author_role author
author2 Ruiz Flores, Ana|||0000-0002-2475-7353
Wu, Q.
Porti i Pujal, Marc|||0000-0001-7438-3823
Nafria, Montserrat|||0000-0002-9549-2890
Aymerich Humet, Xavier|||0000-0002-5874-6257
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv ReRAM
Graphene
Non-volatile memory
CAFM
topic ReRAM
Graphene
Non-volatile memory
CAFM
description Capacitive Metal-Insulator-Semiconductor structures with graphene as interfacial layer between the HfO dielectric and the top electrode have been fabricated and investigated at device level and at the nanoscale with Conductive Atomic Force Microscope. In particular, their electrical properties and variability have been compared to devices without graphene to evaluate their feasibility as ReRAM devices. At device level, we observe that, when graphene is present as an intercalated layer, several resistive switching cycles can be measured, meanwhile the standard structures without graphene do not show resistive switching behavior. Nanoscale analysis showed that the graphene layer prevents the microstructural irreversible damage of the oxide material during a forming process. Therefore, graphene somehow protects the structure during the CF formation. This protection would explain the observation of RS of the devices with intercalated graphene.
publishDate 2021
dc.date.none.fl_str_mv 2
2021-01-01
2021
2021-01-01
dc.type.none.fl_str_mv Article
http://purl.org/coar/resource_type/c_6501
AM
http://purl.org/coar/version/c_ab4af688f83e57aa
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://ddd.uab.cat/record/249448
https://dx.doi.org/urn:doi:10.1016/j.sse.2021.108080
url https://ddd.uab.cat/record/249448
https://dx.doi.org/urn:doi:10.1016/j.sse.2021.108080
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.relation.none.fl_str_mv Agencia Estatal de Investigación https://doi.org/10.13039/501100011033 TEC2016-75151-C3-1-R
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
https://creativecommons.org/licenses/by-nc-nd/4.0/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Dipòsit Digital de Documents de la UAB
instname:Universitat Autònoma de Barcelona
instname_str Universitat Autònoma de Barcelona
reponame_str Dipòsit Digital de Documents de la UAB
collection Dipòsit Digital de Documents de la UAB
repository.name.fl_str_mv
repository.mail.fl_str_mv
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