Improved metal-graphene contacts for low-noise, high-density microtransistor arrays for neural sensing

Poor metal contact interfaces are one of the main limitations preventing unhampered access to the full potential of two-dimensional materials in electronics. Here we present graphene solution-gated field-effect-transistors (gSGFETs) with strongly improved linearity, homogeneity and sensitivity for s...

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Detalles Bibliográficos
Autores: Schaefer, Nathan|||0000-0002-2392-3858, Garcia Cortadella, Ramon|||0000-0002-1506-6534, Bonaccini Calia, Andrea|||0000-0002-7873-4296, Mavredakis, Nikolaos|||0000-0003-3630-9416, Illa, Xavi|||0000-0002-3212-1128, Masvidal Codina, Eduard|||0000-0002-9579-8603, De la Cruz, Jose|||0000-0001-9656-9653, Del Corro, Elena|||0000-0001-6452-9139, Rodríguez Domínguez, Laura|||0000-0002-6669-1962, Prats Alfonso, Elisabet|||0000-0002-7320-1896, Bousquet, Jessica|||0000-0001-5721-8092, Martínez-Aguilar, Javier, Pérez-Marín, Antonio Pablo|||0000-0003-1843-8273, Hébert, Clément|||0000-0001-9667-033X, Villa, Rosa|||0000-0003-2735-3204, Jiménez, David|||0000-0002-8148-198X, Guimerà Brunet, Anton|||0000-0003-1768-3293, Garrido, Jose|||0000-0001-5621-1067
Tipo de recurso: artículo
Fecha de publicación:2020
País:España
Institución:Universitat Autònoma de Barcelona
Repositorio:Dipòsit Digital de Documents de la UAB
Idioma:inglés
OAI Identifier:oai:ddd.uab.cat:233980
Acceso en línea:https://ddd.uab.cat/record/233980
https://dx.doi.org/urn:doi:10.1016/j.carbon.2020.01.066
Access Level:acceso abierto
Palabra clave:Contact treatment
Graphene contacts
Metal-contact interfaces
Neural interfaces
State of the art
Theoretical modeling
Two-dimensional materials
Ultraviolet-ozone
Descripción
Sumario:Poor metal contact interfaces are one of the main limitations preventing unhampered access to the full potential of two-dimensional materials in electronics. Here we present graphene solution-gated field-effect-transistors (gSGFETs) with strongly improved linearity, homogeneity and sensitivity for small sensor sizes, resulting from ultraviolet ozone (UVO) contact treatment. The contribution of channel and contact region to the total device conductivity and flicker noise is explored experimentally and explained with a theoretical model. Finally, in-vitro recordings of flexible microelectrocorticography (μ-ECoG) probes were performed to validate the superior sensitivity of the UVO-treated gSGFET to brain-like activity. These results connote an important step towards the fabrication of high-density gSGFET μ-ECoG arrays with state-of-the-art sensitivity and homogeneity, thus demonstrating the potential of this technology as a versatile platform for the new generation of neural interfaces.

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