Optoelectronic refractometric sensing device for gases based on dielectric bow-ties and amorphous silicon solar cells

The transformation of an hydrogenated amorphous silicon solar cell (aSiH) into an optoelectronic refratometric sensor has been possible through the addition of dielectric bow-tie resonant structures. The indium transparent oxide top electrode is replaced by a thin metallic layer to selectively preve...

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Detalles Bibliográficos
Autores: Hamdy Mohamed Elshorbagy, Mahmoud, Esteban Martínez, Óscar, Cuadrado Conde, Alexander, Alda, Javier
Tipo de recurso: artículo
Fecha de publicación:2022
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/72988
Acceso en línea:https://hdl.handle.net/20.500.14352/72988
Access Level:acceso abierto
Palabra clave:539.2:620.1
535.14
537.533.3
Nanoscale advices
Nanoscience and technology
Optics and photonics
Materiales ópticos
Óptica geométrica e instrumental
Optoelectrónica
Óptica física, óptica cuántica
2209.14 Propiedad ópticas de los sólidos
2209.06 Óptica geométrica
2209.19 Óptica física
Descripción
Sumario:The transformation of an hydrogenated amorphous silicon solar cell (aSiH) into an optoelectronic refratometric sensor has been possible through the addition of dielectric bow-tie resonant structures. The indium transparent oxide top electrode is replaced by a thin metallic layer to selectively prevent the direct transmission of light to the active layer of the cell. Then, an array of dielectric bow-tie structures is placed on top of this electrode, to activate the optical absorption through surface plasmon resonance (SPR). The whole device is exposed to the analyte under measure, which is the surrounding medium. Three different dielectric materials with low, medium, and high refractive index were selected for the bow-ties, namely magnesium fluoride (MgF2), silicon dioxide (SiO2), and aluminum nitride (AlN) have been tested as coupling structure for SPR excitation. The maximization of the readout/short circuit current has been achieved through the geometrical parameters of such structure. We have selected the geometrical parameters to maximize the short circuit current delivered by the a-Si cell at a given selected wavelength. The design has been customized to gas measurements application, where the index of refraction is slightly above 1 around 10−4. Our analysis reveals ultra-high sensitivity of 2.4×104 (mA/W)/RIU, and a figure of merit FOM= 107 RIU−1, when the bow-tie is made of SiO2. A performance rally competitive with those previously reported in literature, with the additional advantage of circunventing both moving parts and spectral interrogation elements.