Energetics and carrier transport in doped Si/SiO2 quantum dots

In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5 nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored dop...

ver descrição completa

Detalhes bibliográficos
Autores: Garcia-Castello, Nuria, Illera Robles, Sergio, Prades García, Juan Daniel, Ossicini, Stefano, Cirera Hernández, Albert, Guerra, Roberto
Formato: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2015
País:España
Recursos:Universidad de Barcelona
Repositorio:Dipòsit Digital de la UB
OAI Identifier:oai:diposit.ub.edu:2445/103227
Acesso em linha:https://hdl.handle.net/2445/103227
Access Level:acceso abierto
Palavra-chave:Transport d'electrons
Semiconductors
Electrònica quàntica
Nanoelectrònica
Electron transport
Quantum electronics
Nanoelectronics
id ES_9cf79a54b7bfc8e1141a82caa7bf9cf3
oai_identifier_str oai:diposit.ub.edu:2445/103227
network_acronym_str ES
network_name_str España
repository_id_str
spelling Energetics and carrier transport in doped Si/SiO2 quantum dotsGarcia-Castello, NuriaIllera Robles, SergioPrades García, Juan DanielOssicini, StefanoCirera Hernández, AlbertGuerra, RobertoTransport d'electronsSemiconductorsElectrònica quànticaNanoelectrònicaElectron transportSemiconductorsQuantum electronicsNanoelectronicsIn the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5 nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime. At higher voltage, our findings indicate a significant increase of transport only for P-doped Si-QDs, while the electrical response of B-doped ones does not stray from the undoped case. These findings are of support for the employment of doped Si-QDs in a wide range of applications, such as Si-based photonics or photovoltaic solar cells.Royal Society of Chemistry2015info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersionapplication/pdfhttps://hdl.handle.net/2445/103227Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésVersió postprint del document publicat a: https://doi.org/10.1039/C5NR02616DNanoscale, 2015, vol. 7, num. 29, p. 12564-12571https://doi.org/10.1039/C5NR02616Dinfo:eu-repo/grantAgreement/EC/FP7/320796(c) Garcia-Castello, Nuria et al., 2015info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/1032272026-05-27T06:46:51Z
dc.title.none.fl_str_mv Energetics and carrier transport in doped Si/SiO2 quantum dots
title Energetics and carrier transport in doped Si/SiO2 quantum dots
spellingShingle Energetics and carrier transport in doped Si/SiO2 quantum dots
Garcia-Castello, Nuria
Transport d'electrons
Semiconductors
Electrònica quàntica
Nanoelectrònica
Electron transport
Semiconductors
Quantum electronics
Nanoelectronics
title_short Energetics and carrier transport in doped Si/SiO2 quantum dots
title_full Energetics and carrier transport in doped Si/SiO2 quantum dots
title_fullStr Energetics and carrier transport in doped Si/SiO2 quantum dots
title_full_unstemmed Energetics and carrier transport in doped Si/SiO2 quantum dots
title_sort Energetics and carrier transport in doped Si/SiO2 quantum dots
dc.creator.none.fl_str_mv Garcia-Castello, Nuria
Illera Robles, Sergio
Prades García, Juan Daniel
Ossicini, Stefano
Cirera Hernández, Albert
Guerra, Roberto
author Garcia-Castello, Nuria
author_facet Garcia-Castello, Nuria
Illera Robles, Sergio
Prades García, Juan Daniel
Ossicini, Stefano
Cirera Hernández, Albert
Guerra, Roberto
author_role author
author2 Illera Robles, Sergio
Prades García, Juan Daniel
Ossicini, Stefano
Cirera Hernández, Albert
Guerra, Roberto
author2_role author
author
author
author
author
dc.subject.none.fl_str_mv Transport d'electrons
Semiconductors
Electrònica quàntica
Nanoelectrònica
Electron transport
Semiconductors
Quantum electronics
Nanoelectronics
topic Transport d'electrons
Semiconductors
Electrònica quàntica
Nanoelectrònica
Electron transport
Semiconductors
Quantum electronics
Nanoelectronics
description In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameters around 1.5 nm, embedded in a SiO2 matrix. Formation energy calculations reveal that the most energetically-favored doping sites are inside the QD and at the Si/SiO2 interface for P and B impurities, respectively. Furthermore, electron and hole transport calculations show in all the cases a strong reduction of the minimum voltage threshold, and a corresponding increase of the total current in the low-voltage regime. At higher voltage, our findings indicate a significant increase of transport only for P-doped Si-QDs, while the electrical response of B-doped ones does not stray from the undoped case. These findings are of support for the employment of doped Si-QDs in a wide range of applications, such as Si-based photonics or photovoltaic solar cells.
publishDate 2015
dc.date.none.fl_str_mv 2015
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv https://hdl.handle.net/2445/103227
url https://hdl.handle.net/2445/103227
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv Versió postprint del document publicat a: https://doi.org/10.1039/C5NR02616D
Nanoscale, 2015, vol. 7, num. 29, p. 12564-12571
https://doi.org/10.1039/C5NR02616D
info:eu-repo/grantAgreement/EC/FP7/320796
dc.rights.none.fl_str_mv (c) Garcia-Castello, Nuria et al., 2015
info:eu-repo/semantics/openAccess
rights_invalid_str_mv (c) Garcia-Castello, Nuria et al., 2015
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Royal Society of Chemistry
publisher.none.fl_str_mv Royal Society of Chemistry
dc.source.none.fl_str_mv Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)
reponame:Dipòsit Digital de la UB
instname:Universidad de Barcelona
instname_str Universidad de Barcelona
reponame_str Dipòsit Digital de la UB
collection Dipòsit Digital de la UB
repository.name.fl_str_mv
repository.mail.fl_str_mv
_version_ 1869414703531294720
score 15,300719

Registos relacionados