Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN

Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a p...

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Detalles Bibliográficos
Autores: Kim, Gwangwoo, Ma, Kyung Yeol, Park, Minsu, Kim, Minsu, Jeon, Jonghyuk, Song, Jinouk, Barrios Vargas, José Eduardo, Sato, Yuta, Lin, Yung-Chang, Suenaga, Kazu, Roche, Stephan, Yoo, Seunghyup, Sohn, Byeong-Hyeok, Jeon, Seokwoo, Shin, Hyeon Suk
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2020
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/233649
Acceso en línea:http://hdl.handle.net/10261/233649
Access Level:acceso abierto
Descripción
Sumario:Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. However, to date, the possible emergence of physical properties and functionalities monitored by the interfaces between metallic graphene and insulating h-BN remains largely unexplored. Here, we demonstrate a blue emitting atomic-resolved heterojunction between graphene and h-BN. Such emission is tentatively attributed to localized energy states formed at the disordered boundaries of h-BN and graphene. The weak blue emission at the heterojunctions in simple in-plane heterostructures of h-BN and graphene can be enhanced by increasing the density of the interface in graphene quantum dots array embedded in the h-BN monolayer. This work suggests that the narrowest, atomically resolved heterojunctions of in-plane two-dimensional heterostructures provides a future playground for optoelectronics.

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