Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions

The resistive switching associated with polarization reversal is studied in detail in ferroelectric BaTiO3 tunnel junctions, with focus on the dynamics of the ferroelectric domain switching. It is observed that the transition between the high‐resistance state (HRS) and the low‐resistance state (LRS)...

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Detalles Bibliográficos
Autores: Mengdi, Qian, Fina, Ignasi, Sánchez Barrera, Florencio, Fontcuberta, Josep
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2019
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/181795
Acceso en línea:http://hdl.handle.net/10261/181795
Access Level:acceso abierto
Palabra clave:BaTiO3 films
Ferroelectric dynamics
Ferroelectric tunnel junctions
Memristors
Neuromorphic computing
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spelling Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel JunctionsMengdi, QianFina, IgnasiSánchez Barrera, FlorencioFontcuberta, JosepBaTiO3 filmsFerroelectric dynamicsFerroelectric tunnel junctionsMemristorsNeuromorphic computingThe resistive switching associated with polarization reversal is studied in detail in ferroelectric BaTiO3 tunnel junctions, with focus on the dynamics of the ferroelectric domain switching. It is observed that the transition between the high‐resistance state (HRS) and the low‐resistance state (LRS) is largely asymmetric being smooth from LRS to HRS, but proceeds via avalanches in the HRS‐to‐LRS transitions. It is shown that this distinct behavior is related to the presence of an imprint field in the junction and has important consequences on the junction's performance.Financial support from the Spanish Government, through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV‐2015‐0496) and the MAT2017‐85232‐R, MAT2014‐56063‐C2‐1‐R, and MAT2015‐73839‐JIN projects, and from Generalitat de Catalunya (2017 SGR 1377) was acknowledged. M.Q. was financially supported by China Scholarship Council (CSC) with Grant No. 201406890019. M.Q. work was done as a part of her Ph.D. program in Materials Science at Universitat Autònoma de Barcelona. I.F. acknowledges Ramon y Cajal contract RYC‐2017‐22531. The authors thank Dr. Neus Domingo for the use of PFM equipment.Peer reviewedWiley-VCHMinisterio de Economía y Competitividad (España)Generalitat de CatalunyaConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]201920192019info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Postprintinfo:eu-repo/semantics/acceptedVersionhttp://hdl.handle.net/10261/181795reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496MICIU/ICTI2017-2020/MAT2017-85232-Rinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2014-56063-C2-1-Rinfo:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2015-73839-JINhttp://dx.doi.org/10.1002/aelm.201800407Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/1817952026-05-22T06:33:51Z
dc.title.none.fl_str_mv Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
title Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
spellingShingle Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
Mengdi, Qian
BaTiO3 films
Ferroelectric dynamics
Ferroelectric tunnel junctions
Memristors
Neuromorphic computing
title_short Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
title_full Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
title_fullStr Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
title_full_unstemmed Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
title_sort Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions
dc.creator.none.fl_str_mv Mengdi, Qian
Fina, Ignasi
Sánchez Barrera, Florencio
Fontcuberta, Josep
author Mengdi, Qian
author_facet Mengdi, Qian
Fina, Ignasi
Sánchez Barrera, Florencio
Fontcuberta, Josep
author_role author
author2 Fina, Ignasi
Sánchez Barrera, Florencio
Fontcuberta, Josep
author2_role author
author
author
dc.contributor.none.fl_str_mv Ministerio de Economía y Competitividad (España)
Generalitat de Catalunya
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv BaTiO3 films
Ferroelectric dynamics
Ferroelectric tunnel junctions
Memristors
Neuromorphic computing
topic BaTiO3 films
Ferroelectric dynamics
Ferroelectric tunnel junctions
Memristors
Neuromorphic computing
description The resistive switching associated with polarization reversal is studied in detail in ferroelectric BaTiO3 tunnel junctions, with focus on the dynamics of the ferroelectric domain switching. It is observed that the transition between the high‐resistance state (HRS) and the low‐resistance state (LRS) is largely asymmetric being smooth from LRS to HRS, but proceeds via avalanches in the HRS‐to‐LRS transitions. It is shown that this distinct behavior is related to the presence of an imprint field in the junction and has important consequences on the junction's performance.
publishDate 2019
dc.date.none.fl_str_mv 2019
2019
2019
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
Postprint
info:eu-repo/semantics/acceptedVersion
format article
status_str acceptedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/181795
url http://hdl.handle.net/10261/181795
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.relation.none.fl_str_mv #PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
#PLACEHOLDER_PARENT_METADATA_VALUE#
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/SEV-2015-0496
MICIU/ICTI2017-2020/MAT2017-85232-R
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2014-56063-C2-1-R
info:eu-repo/grantAgreement/MINECO/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/MAT2015-73839-JIN
http://dx.doi.org/10.1002/aelm.201800407
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv Wiley-VCH
publisher.none.fl_str_mv Wiley-VCH
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
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