Determination of the electron density in GaAs/AlxGa1-xAs heterostructures
An optimized self-consistent method for determination of the quantal electron density is presented. It is applied, in the zero-temperature case, to devices with either partial or full donor ionization. A Thomas-Fermi approximation for the T=0 limit is developed and shown to be appropriate for system...
| Autores: | , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1994 |
| País: | España |
| Recursos: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositorio: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/9945 |
| Acesso em linha: | https://hdl.handle.net/2445/9945 |
| Access Level: | acceso abierto |
| Palavra-chave: | Electrònica quàntica Física de l'estat sòlid Quantum electronics Solid state physics |
| Resumo: | An optimized self-consistent method for determination of the quantal electron density is presented. It is applied, in the zero-temperature case, to devices with either partial or full donor ionization. A Thomas-Fermi approximation for the T=0 limit is developed and shown to be appropriate for systematic studies of the two-dimensional electron density, σ − . A suitable linear approximation is found that provides simple and accurate analytic expressions for σ − in terms of the physical parameters of the device. |
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