Mixed-valence gold bis (diselenolene) complex turning metallic under pressure.
While oxidation of d8 anionic gold bis(dithiolene) complexes most often affords the corresponding neutral radical single-component conductor, an original gold bis(diselenolene) complex isolated as a Ph4P+ salt affords upon electrocrystallization a mixed-valence 1 : 2 salt, [Ph4P][Au(Me-thiazds)2]2 (...
| Autores: | , , , , , , , , |
|---|---|
| Tipo de documento: | artigo |
| Estado: | Versión aceptada para publicación |
| Data de publicação: | 2021 |
| País: | España |
| Recursos: | Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
| Repositório: | Recercat. Dipósit de la Recerca de Catalunya |
| OAI Identifier: | oai:recercat.cat:2445/190207 |
| Acesso em linha: | https://hdl.handle.net/2445/190207 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Or Semiconductors Pressió Gold Pressure |
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Mixed-valence gold bis (diselenolene) complex turning metallic under pressure.Le Gal, YannCui, HengboAlemany i Cahner, PereCanadell, Enric, 1950-Kato, ReizoRoisnel, ThierryDorcet, VincentFourmigué, M.Lorcy, DominiqueOrSemiconductorsPressióGoldSemiconductorsPressureWhile oxidation of d8 anionic gold bis(dithiolene) complexes most often affords the corresponding neutral radical single-component conductor, an original gold bis(diselenolene) complex isolated as a Ph4P+ salt affords upon electrocrystallization a mixed-valence 1 : 2 salt, [Ph4P][Au(Me-thiazds)2]2 (Me-thiazds: 2-methyl-1,3-thiazoline-2-thione-4,5-diselenolate). This salt exhibits a rare charge alternation associated with the simultaneous presence of both cis and trans isomers of the gold complex in the conducting layers. The salt is semiconducting (σRT = 3 × 10−2 S cm−1, Eact = 0.137 eV) but, in contrast with other 1 : 2 gold bis(dithiolene) salts, turns metallic under pressure (>10 GPa). [Ph4P][Au(Me-thiazds)2]2 is thus the first metallic, fully characterized, 1 : 2 mixed-valence gold complex, opening the door for the preparation of highly conducting solids of this type.Royal Society of Chemistry2022202220212022info:eu-repo/semantics/articleinfo:eu-repo/semantics/acceptedVersion12 p.application/pdfhttps://hdl.handle.net/2445/190207Articles publicats en revistes (Ciència dels Materials i Química Física)reponame:Recercat. Dipósit de la Recerca de Catalunyainstname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)InglésVersió postprint del document publicat a: https://doi.org/10.1039/d1tc02751dJournal of Materials Chemistry C, 2021, vol. 9, num. 36, p. 12291-12302https://doi.org/10.1039/d1tc02751d(c) Le Gal, Yann et al., 2021info:eu-repo/semantics/openAccessoai:recercat.cat:2445/1902072026-05-29T05:05:01Z |
| dc.title.none.fl_str_mv |
Mixed-valence gold bis (diselenolene) complex turning metallic under pressure. |
| title |
Mixed-valence gold bis (diselenolene) complex turning metallic under pressure. |
| spellingShingle |
Mixed-valence gold bis (diselenolene) complex turning metallic under pressure. Le Gal, Yann Or Semiconductors Pressió Gold Semiconductors Pressure |
| title_short |
Mixed-valence gold bis (diselenolene) complex turning metallic under pressure. |
| title_full |
Mixed-valence gold bis (diselenolene) complex turning metallic under pressure. |
| title_fullStr |
Mixed-valence gold bis (diselenolene) complex turning metallic under pressure. |
| title_full_unstemmed |
Mixed-valence gold bis (diselenolene) complex turning metallic under pressure. |
| title_sort |
Mixed-valence gold bis (diselenolene) complex turning metallic under pressure. |
| dc.creator.none.fl_str_mv |
Le Gal, Yann Cui, Hengbo Alemany i Cahner, Pere Canadell, Enric, 1950- Kato, Reizo Roisnel, Thierry Dorcet, Vincent Fourmigué, M. Lorcy, Dominique |
| author |
Le Gal, Yann |
| author_facet |
Le Gal, Yann Cui, Hengbo Alemany i Cahner, Pere Canadell, Enric, 1950- Kato, Reizo Roisnel, Thierry Dorcet, Vincent Fourmigué, M. Lorcy, Dominique |
| author_role |
author |
| author2 |
Cui, Hengbo Alemany i Cahner, Pere Canadell, Enric, 1950- Kato, Reizo Roisnel, Thierry Dorcet, Vincent Fourmigué, M. Lorcy, Dominique |
| author2_role |
author author author author author author author author |
| dc.subject.none.fl_str_mv |
Or Semiconductors Pressió Gold Semiconductors Pressure |
| topic |
Or Semiconductors Pressió Gold Semiconductors Pressure |
| description |
While oxidation of d8 anionic gold bis(dithiolene) complexes most often affords the corresponding neutral radical single-component conductor, an original gold bis(diselenolene) complex isolated as a Ph4P+ salt affords upon electrocrystallization a mixed-valence 1 : 2 salt, [Ph4P][Au(Me-thiazds)2]2 (Me-thiazds: 2-methyl-1,3-thiazoline-2-thione-4,5-diselenolate). This salt exhibits a rare charge alternation associated with the simultaneous presence of both cis and trans isomers of the gold complex in the conducting layers. The salt is semiconducting (σRT = 3 × 10−2 S cm−1, Eact = 0.137 eV) but, in contrast with other 1 : 2 gold bis(dithiolene) salts, turns metallic under pressure (>10 GPa). [Ph4P][Au(Me-thiazds)2]2 is thus the first metallic, fully characterized, 1 : 2 mixed-valence gold complex, opening the door for the preparation of highly conducting solids of this type. |
| publishDate |
2021 |
| dc.date.none.fl_str_mv |
2021 2022 2022 2022 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/acceptedVersion |
| format |
article |
| status_str |
acceptedVersion |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/2445/190207 |
| url |
https://hdl.handle.net/2445/190207 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
Versió postprint del document publicat a: https://doi.org/10.1039/d1tc02751d Journal of Materials Chemistry C, 2021, vol. 9, num. 36, p. 12291-12302 https://doi.org/10.1039/d1tc02751d |
| dc.rights.none.fl_str_mv |
(c) Le Gal, Yann et al., 2021 info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
(c) Le Gal, Yann et al., 2021 |
| eu_rights_str_mv |
openAccess |
| dc.format.none.fl_str_mv |
12 p. application/pdf |
| dc.publisher.none.fl_str_mv |
Royal Society of Chemistry |
| publisher.none.fl_str_mv |
Royal Society of Chemistry |
| dc.source.none.fl_str_mv |
Articles publicats en revistes (Ciència dels Materials i Química Física) reponame:Recercat. Dipósit de la Recerca de Catalunya instname:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
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Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya) |
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Recercat. Dipósit de la Recerca de Catalunya |
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Recercat. Dipósit de la Recerca de Catalunya |
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15,811543 |