Graphene based photodetectors for on-chip and free-space data communication applications

(English) Moore's law, a longstanding guide for the semiconductor industry, successfully predicted the exponential growth in computing power by doubling transistor counts every two years. However, recent challenges in maintaining this pace, attributed to physical limitations, energy consumption...

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Author: Soundarapandian, Karuppasamy Pandian
Format: doctoral thesis
Publication Date:2024
Country:España
Institution:Universitat Politècnica de Catalunya (UPC)
Repository:UPCommons. Portal del coneixement obert de la UPC
Language:English
OAI Identifier:oai:upcommons.upc.edu:2117/424507
Online Access:https://hdl.handle.net/2117/424507
https://dx.doi.org/10.5821/dissertation-2117-424507
Access Level:Embargoed access
Keyword:621.3
Àrees temàtiques de la UPC::Enginyeria electrònica
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network_acronym_str ES
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repository_id_str
dc.title.none.fl_str_mv Graphene based photodetectors for on-chip and free-space data communication applications
title Graphene based photodetectors for on-chip and free-space data communication applications
spellingShingle Graphene based photodetectors for on-chip and free-space data communication applications
Soundarapandian, Karuppasamy Pandian
621.3
Àrees temàtiques de la UPC::Enginyeria electrònica
title_short Graphene based photodetectors for on-chip and free-space data communication applications
title_full Graphene based photodetectors for on-chip and free-space data communication applications
title_fullStr Graphene based photodetectors for on-chip and free-space data communication applications
title_full_unstemmed Graphene based photodetectors for on-chip and free-space data communication applications
title_sort Graphene based photodetectors for on-chip and free-space data communication applications
dc.creator.none.fl_str_mv Soundarapandian, Karuppasamy Pandian
author Soundarapandian, Karuppasamy Pandian
author_facet Soundarapandian, Karuppasamy Pandian
author_role author
dc.subject.none.fl_str_mv 621.3
Àrees temàtiques de la UPC::Enginyeria electrònica
topic 621.3
Àrees temàtiques de la UPC::Enginyeria electrònica
description (English) Moore's law, a longstanding guide for the semiconductor industry, successfully predicted the exponential growth in computing power by doubling transistor counts every two years. However, recent challenges in maintaining this pace, attributed to physical limitations, energy consumption, and escalating costs, have prompted a shift in focus towards two-dimensional (2D) materials in semiconductor technology. This thesis aims to bridge the gap in understanding the complexities of incorporating 2D materials, such as Graphene (Gr), Transition Metal Dichalcogenides (TMD), and hexagonal boron nitride (hBN), into Complementary Metal-Oxide-Semiconductor CMOS platforms, paving the way for innovative optoelectronic devices with improved functionality to overcome these challenges. High-quality heterostructures This thesis investigates the crucial role of encapsulants and substrates in Gr-based heterostructures, highlighting their impact on electronic transport characteristics, such as hysteresis (∆n), carrier mobility (µ), and residual charge carrier concentration (n*). Owing to the quality and integration complexity of scalable large-area thick hBN, this thesis explores the utilization of TMD-like tungsten diselenide (WSe2) and tungsten disulfide (WS2) as substrates and encapsulants, respectively, for Gr. The hybrid heterostructures fabricated with WSe2/Gr/hBN and WS2/Gr/hBN exhibited a high µ of ~170,000 and ~140,000 cm2V-1s-1 with a n^*of ~7 and 8 x 1010 cm-2 respectively. This study underscores the significance of substrate engineering, particularly for WS2. A successful demonstration of the effectiveness of TFSI-treated WS2 in encapsulating Gr and its role as a gate dielectric has been established. The treated devices exhibited remarkable stability and resilience, leading to a low ∆n of ~2 x 109 cm-2 with a µ of ~62,000 cm2V-1s-1 and a n^* of ~1.7 x 1011 cm-2. Waveguide-integrated photodetectors The exponential growth of internet users and data traffic necessitates higher bandwidth capabilities in communication systems. Optical transceivers play a pivotal role in meeting this demand, particularly in data centers and broadband access networks. This thesis focuses on the crucial components of optical transceivers, specifically photodetectors (PD), optimized for a wavelength of 1550 nm, a standard for long-distance communication in optical fibers. This thesis explores a photothermoelectric (PTE) WSe2 encapsulated Gr photodetector on a waveguide to address this challenge. Up on a comprehensive analysis of the device's design, the fabricated PD with different widths exhibited a responsivity up to ~12 V/W (long) or 0.1 A/W and ~32 mA/W or 18 V/W (short) with a setup limited bandwidth of 110 GHz. PDs also demonstrated direct detection of NRZ and PAM-4 optical signals up to 120 and 160 Gbps, respectively. Wireless receivers Meanwhile, in wireless telecommunications, efforts must be directed towards boosting data rates to accommodate growing data traffic, as indicated by Edholm's law. The proposed 6G wireless devices are expected to achieve peak data rates of up to 1Tbps. To overcome speed bottlenecks, this thesis proposes exploring the terahertz (THz) range, with a focus on the sub-THz (~200GHz-300GHz) window, exhibiting low-attenuation demands for short-range (<200m) wireless applications. We performed an extensive investigation and optimization of the performance of a PTE-based Gr photodetector using various encapsulants. Among these, the hBN-encapsulated Gr PDs exhibited superior performance compared to their counterparts (PD with CVD Gr), with an elevated responsivity of ~240 (~30) V/W and low noise equivalent power (NEP) of ~1 (~9) x 10-11 W/√Hz. The fabricated PDs exhibited a bandwidth of approximately 1.9 GHz, enabling data rates of 2 Gbps. Finally, we developed a Gr-based receiver, establishing a sub-terahertz wireless communication link that achieved data rates of up to 3 Gbps and efficiently operated over a distance of 2.5 meters.
publishDate 2024
dc.date.none.fl_str_mv 2024
2024-09-20
2025
2025-02-17
2026
2026-09-30
dc.type.none.fl_str_mv doctoral thesis
http://purl.org/coar/resource_type/c_db06
VoR
http://purl.org/coar/version/c_970fb48d4fbd8a85
dc.type.openaire.fl_str_mv info:eu-repo/semantics/doctoralThesis
format doctoralThesis
dc.identifier.none.fl_str_mv https://hdl.handle.net/2117/424507
https://dx.doi.org/10.5821/dissertation-2117-424507
url https://hdl.handle.net/2117/424507
https://dx.doi.org/10.5821/dissertation-2117-424507
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv embargoed access
http://purl.org/coar/access_right/c_f1cf

http://creativecommons.org/licenses/by-nc/4.0/
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dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Universitat Politècnica de Catalunya
publisher.none.fl_str_mv Universitat Politècnica de Catalunya
dc.source.none.fl_str_mv reponame:UPCommons. Portal del coneixement obert de la UPC
instname:Universitat Politècnica de Catalunya (UPC)
instname_str Universitat Politècnica de Catalunya (UPC)
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spelling Graphene based photodetectors for on-chip and free-space data communication applicationsSoundarapandian, Karuppasamy Pandian621.3Àrees temàtiques de la UPC::Enginyeria electrònica(English) Moore's law, a longstanding guide for the semiconductor industry, successfully predicted the exponential growth in computing power by doubling transistor counts every two years. However, recent challenges in maintaining this pace, attributed to physical limitations, energy consumption, and escalating costs, have prompted a shift in focus towards two-dimensional (2D) materials in semiconductor technology. This thesis aims to bridge the gap in understanding the complexities of incorporating 2D materials, such as Graphene (Gr), Transition Metal Dichalcogenides (TMD), and hexagonal boron nitride (hBN), into Complementary Metal-Oxide-Semiconductor CMOS platforms, paving the way for innovative optoelectronic devices with improved functionality to overcome these challenges. High-quality heterostructures This thesis investigates the crucial role of encapsulants and substrates in Gr-based heterostructures, highlighting their impact on electronic transport characteristics, such as hysteresis (∆n), carrier mobility (µ), and residual charge carrier concentration (n*). Owing to the quality and integration complexity of scalable large-area thick hBN, this thesis explores the utilization of TMD-like tungsten diselenide (WSe2) and tungsten disulfide (WS2) as substrates and encapsulants, respectively, for Gr. The hybrid heterostructures fabricated with WSe2/Gr/hBN and WS2/Gr/hBN exhibited a high µ of ~170,000 and ~140,000 cm2V-1s-1 with a n^*of ~7 and 8 x 1010 cm-2 respectively. This study underscores the significance of substrate engineering, particularly for WS2. A successful demonstration of the effectiveness of TFSI-treated WS2 in encapsulating Gr and its role as a gate dielectric has been established. The treated devices exhibited remarkable stability and resilience, leading to a low ∆n of ~2 x 109 cm-2 with a µ of ~62,000 cm2V-1s-1 and a n^* of ~1.7 x 1011 cm-2. Waveguide-integrated photodetectors The exponential growth of internet users and data traffic necessitates higher bandwidth capabilities in communication systems. Optical transceivers play a pivotal role in meeting this demand, particularly in data centers and broadband access networks. This thesis focuses on the crucial components of optical transceivers, specifically photodetectors (PD), optimized for a wavelength of 1550 nm, a standard for long-distance communication in optical fibers. This thesis explores a photothermoelectric (PTE) WSe2 encapsulated Gr photodetector on a waveguide to address this challenge. Up on a comprehensive analysis of the device's design, the fabricated PD with different widths exhibited a responsivity up to ~12 V/W (long) or 0.1 A/W and ~32 mA/W or 18 V/W (short) with a setup limited bandwidth of 110 GHz. PDs also demonstrated direct detection of NRZ and PAM-4 optical signals up to 120 and 160 Gbps, respectively. Wireless receivers Meanwhile, in wireless telecommunications, efforts must be directed towards boosting data rates to accommodate growing data traffic, as indicated by Edholm's law. The proposed 6G wireless devices are expected to achieve peak data rates of up to 1Tbps. To overcome speed bottlenecks, this thesis proposes exploring the terahertz (THz) range, with a focus on the sub-THz (~200GHz-300GHz) window, exhibiting low-attenuation demands for short-range (<200m) wireless applications. We performed an extensive investigation and optimization of the performance of a PTE-based Gr photodetector using various encapsulants. Among these, the hBN-encapsulated Gr PDs exhibited superior performance compared to their counterparts (PD with CVD Gr), with an elevated responsivity of ~240 (~30) V/W and low noise equivalent power (NEP) of ~1 (~9) x 10-11 W/√Hz. The fabricated PDs exhibited a bandwidth of approximately 1.9 GHz, enabling data rates of 2 Gbps. Finally, we developed a Gr-based receiver, establishing a sub-terahertz wireless communication link that achieved data rates of up to 3 Gbps and efficiently operated over a distance of 2.5 meters.(Català) La llei de Moore, en la indústria dels semiconductors, ha predit el exponencial en la potència de càlcul al duplicar el nombre de transistors cada dos anys. No obstant això, els recents reptes per mantenir aquest ritme, deguts a limitacions físiques, consum energètic i un increment de costos de producció, han impulsat un canvi de focus cap als materials bidimensionals (2D). Aquesta tesi pretén contribuir al millor enteniment i resolució de les complexitats d'incorporar materials 2D, com ara el grafè (Gr), els dicalcogenurs de metalls de transició(TMD) i el nitrat de bor hexagonal (hBN), en plataformes de Metall-Òxid-Semiconductor Complementari (CMOS), obrint pas a dispositius optoelectrònics innovadors amb una funcionalitat millorada per superar aquests reptes. Aquesta tesi investiga el paper crucial dels substrats i encapsulants en heterostructures basades en Gr, destacant el seu impacte en les característiques del transport electrònic, com ara la histèresi (∆n), la mobilitat (µ) i la concentració residual de càrrega (n*). A causa de la qualitat i complexitat d'integrar grans àrees de hBN de manera escalable, aquesta tesi explora la utilització de TMDs com el diselenur de tungstè(WSe2) i el disulfur de tungstè(WS2) com a substrat i encapsulant, respectivament, del Gr. Les heterostructures híbrides fabricades amb WSe2/Gr/hBN i WS2/Gr/hBN van exhibir alts valors de µ, ~ 170.000 i 140.000cm2V-1s-1 amb una n* de 7 i 8 x 1010cm-2. Aquest estudi destaca la importància de l'enginyeria del substrat, particularment per WS2. També estableix una demostració de l'eficàcia del WS2 tractat químicament com a encapsulant del Gr, així com el seu paper com a dielèctric. Els dispositius tractats van exhibir una estabilitat i una resistència remarcables, donant lloc a una baixa ∆n ~ 2 x 109cm-2 amb una µ de 62.000cm2V-1s-1 i n* 1,7 x1011cm-2. El creixement exponencial dels usuaris d'internet i del trànsit de dades necessita un increment de les capacitats de banda ampla en els sistemes de comunicació. Els transceptors òptics juguen un paper fonamental per satisfer aquesta demanda, especialment en centres de dades i xarxes de banda ampla. Aquesta tesi es centra en els components crucials dels transceptors òptics, específicament en els FDs. Per fer front a aquest desafiament, aquesta tesi explora un fotodetector (FD) foto-termoelèctric(PTE) de Gr encapsulat amb WSe2 en una guia d'ones. Després d'un anàlisi exhaustiu del disseny del dispositiu, els FDs, fabricats en diferents longituds, van exhibir una responsivitat de fins a ~12V/W (llarg) o 0,1A/W i ~32mA/W o 18V/W (curt) amb una amplada de banda limitada pel sistema de 110GHz. Els PDs també van demostrar la detecció directa de senyals òptics NRZ i PAM-4 fins a 120 i 160Gbps. En el camp de les telecomunicacions sense fils, els esforços s'han de dirigir cap a augmentar la freqüència de dades per acomodar el creixent trànsit de dades (llei d'Edholm). Es preveu que els dispositius sense fils proposats per al 6G aconsegueixin freqüències de dades de fins a 1 Tbps. Per superar els problemes de velocitat, aquesta tesi proposa explorar el rang terahertz (THz), amb el focus posat en la finestra sub-THz (200-300GHz), que exhibeix una atenuació inferior a la requerida per a aplicacions sense fils de curt abast (<200m). Hem realitzat una extensa investigació i optimització del rendiment d'un FD de Gr basat en PTE utilitzant diversos encapsulants. D'entre aquests, els FDs de Gr encapsulats amb hBN van exhibir un rendiment superior comparat amb els seus equivalents (FDs amb Gr CVD), amb una elevada responsivitat ~240 (30) V/W i una baixa potència equivalent de soroll (NEP) ~1 (9) x 10-11W/√Hz. Els FDs fabricats van exhibir una amplada de banda 1,9GHz, permetent freqüències de dades de 2Gbps. Finalment, vam desenvolupar un receptor basat en Gr, establint una comunicació sense fils sub-THz eficientment que va aconseguir freqüències de dades de fins a 3Gbps per a una distància de 2,5m.Universitat Politècnica de Catalunya20242024-09-2020252025-02-1720262026-09-30doctoral thesishttp://purl.org/coar/resource_type/c_db06VoRhttp://purl.org/coar/version/c_970fb48d4fbd8a85info:eu-repo/semantics/doctoralThesisapplication/pdfhttps://hdl.handle.net/2117/424507https://dx.doi.org/10.5821/dissertation-2117-424507reponame:UPCommons. Portal del coneixement obert de la UPCinstname:Universitat Politècnica de Catalunya (UPC)Inglésengembargoed accesshttp://purl.org/coar/access_right/c_f1cfhttp://creativecommons.org/licenses/by-nc/4.0/info:eu-repo/semantics/embargoedAccessoai:upcommons.upc.edu:2117/4245072026-05-27T15:37:01Z
score 15.812429

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