Cathodoluminescence study of isoelectronic doping of gallium oxide nanowires
Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires have been investigated by means of the secondary electrons...
| Autores: | , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2009 |
| País: | España |
| Recursos: | Universidad Complutense de Madrid (UCM) |
| Repositorio: | Docta Complutense |
| Idioma: | inglés |
| OAI Identifier: | oai:docta.ucm.es:20.500.14352/44098 |
| Acesso em linha: | https://hdl.handle.net/20.500.14352/44098 |
| Access Level: | acceso abierto |
| Palavra-chave: | 538.9 Luminescence Beta-Ga_2O_3 Física de materiales |
| Resumo: | Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires have been investigated by means of the secondary electrons and cathodoluminescence (CL) techniques in the SEM. Red and blue-UV emission bands appear as complex bands and their components are influenced by the presence of In or Al, leading to a blue-shift of the blue-UV band usually observed in undoped gallium oxide. These In and Al related changes in the luminescence features of doped Ga_2O_3 nanostructures are discussed. |
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