Revealing Fast Cu-Ion Transport and Enhanced Conductivity at the CuInP2S6-In4/3P2S6 Heterointerface

Van der Waals layered ferroelectrics, such as CuInP2S6 (CIPS), offer a versatile platform for miniaturization of ferroelectric device technology. Control of the targeted composition and kinetics of CIPS synthesis, enables the formation of stable self-assembled heterostructures of ferroelectric CIPS...

Descripción completa

Detalles Bibliográficos
Autores: Checa Nualart, Martí, Jin, Xin, Millán Solsona, Rubén, Neumayer, Sabine M., Susner, Michael A., McGuire, Michael A., O'Hara, Andrew, Gomila Lluch, Gabriel, Maksymovych, Petro, Pantelides, Socrates T., Collins, Liam
Tipo de recurso: artículo
Estado:Versión aceptada para publicación
Fecha de publicación:2022
País:España
Institución:Varias* (Consorci de Biblioteques Universitáries de Catalunya, Centre de Serveis Científics i Acadèmics de Catalunya)
Repositorio:Recercat. Dipósit de la Recerca de Catalunya
OAI Identifier:oai:recercat.cat:2445/197427
Acceso en línea:https://hdl.handle.net/2445/197427
Access Level:acceso abierto
Palabra clave:Microscòpia electrònica d'escombratge
Nanotecnologia
Microscòpia de força atòmica
Scanning electron microscopy
Nanotechnology
Atomic force microscopy
Descripción
Sumario:Van der Waals layered ferroelectrics, such as CuInP2S6 (CIPS), offer a versatile platform for miniaturization of ferroelectric device technology. Control of the targeted composition and kinetics of CIPS synthesis, enables the formation of stable self-assembled heterostructures of ferroelectric CIPS and non-ferroelectric In4/3P2S6 (IPS). Here, we use advanced quantitative scanning probe microscopy and density-functional-theory to explore in detail the nanoscale variability in dynamic functional properties of the CIPS-IPS heterostructure. We report evidence of fast ionic transport mediating an appreciable out-of-plane electromechanical response of CIPS in the paraelectric phase. Further, we map the local dielectric constant and ionic conductivity on the nanoscale as we thermally stimulate the ferroelectric-paraelectric phase transition, recovering the bulk dielectric peak of the transition at the nanoscale. Finally, we discover a conductivity enhancement at the CIPS/IPS interface, indicating the possibility of engineering its interfacial properties for next generation device applications.

Similares en LA Referencia