Crystallographic engineering of spin transport in antiferromagnetic NiO thin films

In this work, we investigate how the crystallographic growth direction influences spin current transmission in antiferromagnetic (AF) NiO thin films. By manipulating epitaxial growth, we explored the spin transport characteristics in La2/3Sr1/3MnO3/NiO/Pt heterostructures grown on top of (001)- and...

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Autores: Chen, Shoulong, Pomar, Alberto, Balcells, Lluis, Konstantinovic, Zorica, Bozzo, Bernat, Frontera, Carlos, Magén, César, Mestres, Narcís, Martínez Perea, Benjamín
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2025
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/404166
Acesso em linha:http://hdl.handle.net/10261/404166
Access Level:acceso abierto
Palavra-chave:Spin pumping
Antiferromagnets
Spin currents transmission
Complex oxides heterostructures
Inverse spin Hall effect
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dc.title.none.fl_str_mv Crystallographic engineering of spin transport in antiferromagnetic NiO thin films
title Crystallographic engineering of spin transport in antiferromagnetic NiO thin films
spellingShingle Crystallographic engineering of spin transport in antiferromagnetic NiO thin films
Chen, Shoulong
Spin pumping
Antiferromagnets
Spin currents transmission
Complex oxides heterostructures
Inverse spin Hall effect
title_short Crystallographic engineering of spin transport in antiferromagnetic NiO thin films
title_full Crystallographic engineering of spin transport in antiferromagnetic NiO thin films
title_fullStr Crystallographic engineering of spin transport in antiferromagnetic NiO thin films
title_full_unstemmed Crystallographic engineering of spin transport in antiferromagnetic NiO thin films
title_sort Crystallographic engineering of spin transport in antiferromagnetic NiO thin films
dc.creator.none.fl_str_mv Chen, Shoulong
Pomar, Alberto
Balcells, Lluis
Konstantinovic, Zorica
Bozzo, Bernat
Frontera, Carlos
Magén, César
Mestres, Narcís
Martínez Perea, Benjamín
author Chen, Shoulong
author_facet Chen, Shoulong
Pomar, Alberto
Balcells, Lluis
Konstantinovic, Zorica
Bozzo, Bernat
Frontera, Carlos
Magén, César
Mestres, Narcís
Martínez Perea, Benjamín
author_role author
author2 Pomar, Alberto
Balcells, Lluis
Konstantinovic, Zorica
Bozzo, Bernat
Frontera, Carlos
Magén, César
Mestres, Narcís
Martínez Perea, Benjamín
author2_role author
author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Agencia Estatal de Investigación (España)
Ministerio de Ciencia, Innovación y Universidades (España)
European Commission
China Scholarship Council
CSIC - Instituto de Ciencia de Materiales de Barcelona (ICMAB)
Universidad Autónoma de Barcelona
Consejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]
dc.subject.none.fl_str_mv Spin pumping
Antiferromagnets
Spin currents transmission
Complex oxides heterostructures
Inverse spin Hall effect
topic Spin pumping
Antiferromagnets
Spin currents transmission
Complex oxides heterostructures
Inverse spin Hall effect
description In this work, we investigate how the crystallographic growth direction influences spin current transmission in antiferromagnetic (AF) NiO thin films. By manipulating epitaxial growth, we explored the spin transport characteristics in La2/3Sr1/3MnO3/NiO/Pt heterostructures grown on top of (001)- and (111)-oriented SrTiO3 substrates, varying the NiO barrier thickness (tNiO). Spin currents were generated via spin pumping (SP), and detection was done by the inverse spin Hall effect (ISHE). X-ray diffraction and high-resolution electron microscopy techniques confirmed high-quality epitaxial films with nearly atomically sharp interfaces and similar dislocation distributions, irrespective of the growth direction. Nevertheless, epitaxially engineered (111) heterostructures exhibited superior spin transport properties, including lower magnetic damping (α), longer spin diffusion lengths (λSd), and higher spin mixing conductance (g↑↓). The temperature dependence of the ISHE voltage signal (VISHE) also showed orientation-dependent behavior: while (001)-oriented samples followed a monotonic trend, (111)-oriented samples displayed a peak that shifted to higher temperatures with increasing tNiO, associated with the emergence of AF ordering. Moreover, (111)-oriented samples demonstrated notable spin current amplification at room temperature, peaking at tNiO ≈ 1 nm before decaying quasi-exponentially, indicative of spin diffusion-mediated conduction. Although the spin diffusion length in (111)-oriented samples was roughly double that of their (001)-oriented counterparts, it was still too short to be explained by angular momentum transport by mobile antiferromagnons through NiO. Instead, these findings point to a mechanism involving magnetic correlations and short-range thermal magnons. The superior spin transport properties and the enhanced spin conduction in (111)-oriented samples are primarily attributed to a synergistic combination of interfacial and dynamic effects, a more favorable Néel vector alignment and distinct interface symmetry, which can enhance spin-Hall effects or enable different spin textures. Overall, this study underscores the pivotal role of the Néel vector and crystallographic orientation in AF spin transport, providing valuable insights for the design and optimization of spintronic devices.
publishDate 2025
dc.date.none.fl_str_mv 2025
2025
2025
dc.type.none.fl_str_mv info:eu-repo/semantics/article
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Publisher's version
info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/404166
url http://hdl.handle.net/10261/404166
dc.language.none.fl_str_mv Inglés
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info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2021-128410OB-I00
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/CEX2023-001263-S
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-112914RB-I00
info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2021-124680OB-I00
Chen, Shoulong; Pomar, Alberto; Balcells, Lluis; Konstantinovic, Zorica; Bozzo, Bernat; Frontera, Carlos; Magén, César; Mestres, Narcís; Martínez Perea, Benjamín; 2025; Supporting Information: Crystallographic engineering of spin transport in antiferromagnetic NiO thin films [Dataset]; American Chemical Society; https://doi.org/10.1021/acsnano.5c06120
https://doi.org/10.1021/acsnano.5c06120
Sí
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
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dc.publisher.none.fl_str_mv American Chemical Society
publisher.none.fl_str_mv American Chemical Society
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
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spelling Crystallographic engineering of spin transport in antiferromagnetic NiO thin filmsChen, ShoulongPomar, AlbertoBalcells, LluisKonstantinovic, ZoricaBozzo, BernatFrontera, CarlosMagén, CésarMestres, NarcísMartínez Perea, BenjamínSpin pumpingAntiferromagnetsSpin currents transmissionComplex oxides heterostructuresInverse spin Hall effectIn this work, we investigate how the crystallographic growth direction influences spin current transmission in antiferromagnetic (AF) NiO thin films. By manipulating epitaxial growth, we explored the spin transport characteristics in La2/3Sr1/3MnO3/NiO/Pt heterostructures grown on top of (001)- and (111)-oriented SrTiO3 substrates, varying the NiO barrier thickness (tNiO). Spin currents were generated via spin pumping (SP), and detection was done by the inverse spin Hall effect (ISHE). X-ray diffraction and high-resolution electron microscopy techniques confirmed high-quality epitaxial films with nearly atomically sharp interfaces and similar dislocation distributions, irrespective of the growth direction. Nevertheless, epitaxially engineered (111) heterostructures exhibited superior spin transport properties, including lower magnetic damping (α), longer spin diffusion lengths (λSd), and higher spin mixing conductance (g↑↓). The temperature dependence of the ISHE voltage signal (VISHE) also showed orientation-dependent behavior: while (001)-oriented samples followed a monotonic trend, (111)-oriented samples displayed a peak that shifted to higher temperatures with increasing tNiO, associated with the emergence of AF ordering. Moreover, (111)-oriented samples demonstrated notable spin current amplification at room temperature, peaking at tNiO ≈ 1 nm before decaying quasi-exponentially, indicative of spin diffusion-mediated conduction. Although the spin diffusion length in (111)-oriented samples was roughly double that of their (001)-oriented counterparts, it was still too short to be explained by angular momentum transport by mobile antiferromagnons through NiO. Instead, these findings point to a mechanism involving magnetic correlations and short-range thermal magnons. The superior spin transport properties and the enhanced spin conduction in (111)-oriented samples are primarily attributed to a synergistic combination of interfacial and dynamic effects, a more favorable Néel vector alignment and distinct interface symmetry, which can enhance spin-Hall effects or enable different spin textures. Overall, this study underscores the pivotal role of the Néel vector and crystallographic orientation in AF spin transport, providing valuable insights for the design and optimization of spintronic devices.This work has received funding from the State Investigation Agency, through the Severo Ochoa Programme for Centres of Excellence in R&D (CEX2023–001263-S) and “OXISOT” (PID2021-128410OB-I00) and “AMONANO” (PID2020-112914RB-I00) and HTSUPERFUN (PID2021-124680OB-I00) funded by MCIN/AEI/10.13039/501100011033 and by “ERDF A way of making Europe”, by the “European Union”. Shoulong Chen acknowledges financial support from the China Scholarship Council (CSC). We acknowledge the contribution from ICMAB-CSIC’s Scientific & Technological Services: X-ray Diffraction (Mr. J. Esquius, Ms. A. Crespi and Mr. X. Campos). This work has been performed in the framework of the Ph.D. program in Materials Science of the Universitat Autònoma de Barcelona (UAB), through the CSC/UAB Joint Scholarship program.CEX2023-001263-SPeer reviewedAmerican Chemical SocietyAgencia Estatal de Investigación (España)Ministerio de Ciencia, Innovación y Universidades (España)European CommissionChina Scholarship CouncilCSIC - Instituto de Ciencia de Materiales de Barcelona (ICMAB)Universidad Autónoma de BarcelonaConsejo Superior de Investigaciones Científicas [https://ror.org/02gfc7t72]202520252025info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501Publisher's versioninfo:eu-repo/semantics/publishedVersionapplication/pdfhttp://hdl.handle.net/10261/404166reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglés#PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE##PLACEHOLDER_PARENT_METADATA_VALUE#info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2021-128410OB-I00info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/CEX2023-001263-Sinfo:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2017-2020/PID2020-112914RB-I00info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2021-2023/PID2021-124680OB-I00Chen, Shoulong; Pomar, Alberto; Balcells, Lluis; Konstantinovic, Zorica; Bozzo, Bernat; Frontera, Carlos; Magén, César; Mestres, Narcís; Martínez Perea, Benjamín; 2025; Supporting Information: Crystallographic engineering of spin transport in antiferromagnetic NiO thin films [Dataset]; American Chemical Society; https://doi.org/10.1021/acsnano.5c06120https://doi.org/10.1021/acsnano.5c06120Síinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/4041662026-05-22T06:33:51Z
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