Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphization

A thermal-spike model has been applied to characterize the damage structure of the latent tracks generated by high-energy ion irradiations on LiNb O3 through electron excitation mechanisms. It applies to ions having electronic stopping powers both below and above the threshold value for lattice amor...

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Autores: Agulló-López, F., García, Gustavo, Olivares Pascual, José
Formato: artículo
Fecha de publicación:2005
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/64657
Acesso em linha:http://hdl.handle.net/10261/64657
Access Level:acceso abierto
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spelling Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphizationAgulló-López, F.García, GustavoOlivares Pascual, JoséA thermal-spike model has been applied to characterize the damage structure of the latent tracks generated by high-energy ion irradiations on LiNb O3 through electron excitation mechanisms. It applies to ions having electronic stopping powers both below and above the threshold value for lattice amorphization. The model allows to estimate the defect concentrations in the heavily damaged (preamorphized) regions that have not reached the threshold for amorphization. They include the halo and tail surrounding the core of a latent track. The existence of the preamorphized regions accounts for a synergy between successive irradiations and predicts a dependence of the amorphization threshold on previous irradiation fluence. The predicted dependence is in accordance with irradiation experiments using N (4.53 MeV), O (5.00 MeV), F (5.13 MeV), and Si (5 and 7.5 MeV). For electronic stopping powers above the threshold value the model describes the generation of homogeneous amorphous layers and predicts the propagation of the amorphization front with fluence. A theoretical expression, describing this propagation, has been obtained that is in reasonable agreement with silicon irradiation experiments at 5 and 7.5 MeV. The accordance is improved by including in a simple phenomenological way the velocity effect on the threshold. At the highest fluences (or depths) a significant discrepancy appears that may be attributed to the contribution of the nuclear collision damage. © 2005 American Institute of Physics.Peer ReviewedAmerican Institute of Physics2013201320052013info:eu-repo/semantics/articlehttp://purl.org/coar/resource_type/c_6501http://hdl.handle.net/10261/64657reponame:DIGITAL.CSIC. Repositorio Institucional del CSICinstname:Consejo Superior de Investigaciones Científicas (CSIC)Inglésinfo:eu-repo/semantics/openAccessoai:digital.csic.es:10261/646572026-05-22T06:33:51Z
dc.title.none.fl_str_mv Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphization
title Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphization
spellingShingle Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphization
Agulló-López, F.
title_short Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphization
title_full Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphization
title_fullStr Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphization
title_full_unstemmed Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphization
title_sort Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphization
dc.creator.none.fl_str_mv Agulló-López, F.
García, Gustavo
Olivares Pascual, José
author Agulló-López, F.
author_facet Agulló-López, F.
García, Gustavo
Olivares Pascual, José
author_role author
author2 García, Gustavo
Olivares Pascual, José
author2_role author
author
description A thermal-spike model has been applied to characterize the damage structure of the latent tracks generated by high-energy ion irradiations on LiNb O3 through electron excitation mechanisms. It applies to ions having electronic stopping powers both below and above the threshold value for lattice amorphization. The model allows to estimate the defect concentrations in the heavily damaged (preamorphized) regions that have not reached the threshold for amorphization. They include the halo and tail surrounding the core of a latent track. The existence of the preamorphized regions accounts for a synergy between successive irradiations and predicts a dependence of the amorphization threshold on previous irradiation fluence. The predicted dependence is in accordance with irradiation experiments using N (4.53 MeV), O (5.00 MeV), F (5.13 MeV), and Si (5 and 7.5 MeV). For electronic stopping powers above the threshold value the model describes the generation of homogeneous amorphous layers and predicts the propagation of the amorphization front with fluence. A theoretical expression, describing this propagation, has been obtained that is in reasonable agreement with silicon irradiation experiments at 5 and 7.5 MeV. The accordance is improved by including in a simple phenomenological way the velocity effect on the threshold. At the highest fluences (or depths) a significant discrepancy appears that may be attributed to the contribution of the nuclear collision damage. © 2005 American Institute of Physics.
publishDate 2005
dc.date.none.fl_str_mv 2005
2013
2013
2013
dc.type.none.fl_str_mv info:eu-repo/semantics/article
http://purl.org/coar/resource_type/c_6501
format article
dc.identifier.none.fl_str_mv http://hdl.handle.net/10261/64657
url http://hdl.handle.net/10261/64657
dc.language.none.fl_str_mv Inglés
language_invalid_str_mv Inglés
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.publisher.none.fl_str_mv American Institute of Physics
publisher.none.fl_str_mv American Institute of Physics
dc.source.none.fl_str_mv reponame:DIGITAL.CSIC. Repositorio Institucional del CSIC
instname:Consejo Superior de Investigaciones Científicas (CSIC)
instname_str Consejo Superior de Investigaciones Científicas (CSIC)
reponame_str DIGITAL.CSIC. Repositorio Institucional del CSIC
collection DIGITAL.CSIC. Repositorio Institucional del CSIC
repository.name.fl_str_mv
repository.mail.fl_str_mv
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