Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf_0.5Zr_0.5O_2 thin films

Epitaxial orthorhombic Hf_(0.5)Zr_(0.5)O_2 (HZO) films on La_(0.67)Sr_(0.33)MnO_3 (LSMO) electrodes show robust ferroelectricity with high polarization, endurance and retention. However, no similar results have been achieved using other perovskite electrodes so far. Here, LSMO and other perovskite e...

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Detalles Bibliográficos
Autores: Estandía, Saúl, Gazquez, Jaume, Dix, Nico, Varela Del Arco, María, Qian, Mengdi, Solanas, Raúl, Fina, Ignasi, Sánchez Barrera, Florencio
Tipo de recurso: artículo
Fecha de publicación:2021
País:España
Institución:Universidad Complutense de Madrid (UCM)
Repositorio:Docta Complutense
Idioma:inglés
OAI Identifier:oai:docta.ucm.es:20.500.14352/7960
Acceso en línea:https://hdl.handle.net/20.500.14352/7960
Access Level:acceso abierto
Palabra clave:538.9
Materials Science
Multidisciplinary
Physics
Applied
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
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spelling Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf_0.5Zr_0.5O_2 thin filmsEstandía, SaúlGazquez, JaumeDix, NicoVarela Del Arco, MaríaQian, MengdiSolanas, RaúlFina, IgnasiSánchez Barrera, Florencio538.9Materials ScienceMultidisciplinaryPhysicsAppliedFísica de materialesFísica del estado sólido2211 Física del Estado SólidoEpitaxial orthorhombic Hf_(0.5)Zr_(0.5)O_2 (HZO) films on La_(0.67)Sr_(0.33)MnO_3 (LSMO) electrodes show robust ferroelectricity with high polarization, endurance and retention. However, no similar results have been achieved using other perovskite electrodes so far. Here, LSMO and other perovskite electrodes are compared. A small amount of orthorhombic phase and low polarization are found in HZO films grown on La-doped BaSnO_3 and Nb-doped SrTiO_3, while null amounts of orthorhombic phase and polarization are detected in films on LaNiO3 and SrRuO_3. The critical effect of the electrode on the stabilized phases is not a consequence of the differences in the electrode lattice parameter. The interface is critical, and engineering the HZO bottom interface on just a few monolayers of LSMO permits the stabilization of the orthorhombic phase. Furthermore, while the specific divalent ion (Sr or Ca) in the manganite is not relevant, reducing the La content causes a severe reduction of the amount of orthorhombic phase and the ferroelectric polarization in the HZO film.Royal Society of ChemistryUniversidad Complutense de Madrid20212021-03-1420212021-03-14journal articlehttp://purl.org/coar/resource_type/c_6501info:eu-repo/semantics/articleapplication/pdfhttps://hdl.handle.net/20.500.14352/7960reponame:Docta Complutenseinstname:Universidad Complutense de Madrid (UCM)Inglésengopen accesshttp://purl.org/coar/access_right/c_abf2Atribución 3.0 Españahttps://creativecommons.org/licenses/by/3.0/es/info:eu-repo/semantics/openAccessoai:docta.ucm.es:20.500.14352/79602026-06-02T12:44:21Z
dc.title.none.fl_str_mv Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf_0.5Zr_0.5O_2 thin films
title Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf_0.5Zr_0.5O_2 thin films
spellingShingle Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf_0.5Zr_0.5O_2 thin films
Estandía, Saúl
538.9
Materials Science
Multidisciplinary
Physics
Applied
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
title_short Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf_0.5Zr_0.5O_2 thin films
title_full Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf_0.5Zr_0.5O_2 thin films
title_fullStr Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf_0.5Zr_0.5O_2 thin films
title_full_unstemmed Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf_0.5Zr_0.5O_2 thin films
title_sort Critical effect of the bottom electrode on the ferroelectricity of epitaxial Hf_0.5Zr_0.5O_2 thin films
dc.creator.none.fl_str_mv Estandía, Saúl
Gazquez, Jaume
Dix, Nico
Varela Del Arco, María
Qian, Mengdi
Solanas, Raúl
Fina, Ignasi
Sánchez Barrera, Florencio
author Estandía, Saúl
author_facet Estandía, Saúl
Gazquez, Jaume
Dix, Nico
Varela Del Arco, María
Qian, Mengdi
Solanas, Raúl
Fina, Ignasi
Sánchez Barrera, Florencio
author_role author
author2 Gazquez, Jaume
Dix, Nico
Varela Del Arco, María
Qian, Mengdi
Solanas, Raúl
Fina, Ignasi
Sánchez Barrera, Florencio
author2_role author
author
author
author
author
author
author
dc.contributor.none.fl_str_mv Universidad Complutense de Madrid
dc.subject.none.fl_str_mv 538.9
Materials Science
Multidisciplinary
Physics
Applied
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
topic 538.9
Materials Science
Multidisciplinary
Physics
Applied
Física de materiales
Física del estado sólido
2211 Física del Estado Sólido
description Epitaxial orthorhombic Hf_(0.5)Zr_(0.5)O_2 (HZO) films on La_(0.67)Sr_(0.33)MnO_3 (LSMO) electrodes show robust ferroelectricity with high polarization, endurance and retention. However, no similar results have been achieved using other perovskite electrodes so far. Here, LSMO and other perovskite electrodes are compared. A small amount of orthorhombic phase and low polarization are found in HZO films grown on La-doped BaSnO_3 and Nb-doped SrTiO_3, while null amounts of orthorhombic phase and polarization are detected in films on LaNiO3 and SrRuO_3. The critical effect of the electrode on the stabilized phases is not a consequence of the differences in the electrode lattice parameter. The interface is critical, and engineering the HZO bottom interface on just a few monolayers of LSMO permits the stabilization of the orthorhombic phase. Furthermore, while the specific divalent ion (Sr or Ca) in the manganite is not relevant, reducing the La content causes a severe reduction of the amount of orthorhombic phase and the ferroelectric polarization in the HZO film.
publishDate 2021
dc.date.none.fl_str_mv 2021
2021-03-14
2021
2021-03-14
dc.type.none.fl_str_mv journal article
http://purl.org/coar/resource_type/c_6501
dc.type.openaire.fl_str_mv info:eu-repo/semantics/article
format article
dc.identifier.none.fl_str_mv https://hdl.handle.net/20.500.14352/7960
url https://hdl.handle.net/20.500.14352/7960
dc.language.none.fl_str_mv Inglés
eng
language_invalid_str_mv Inglés
language eng
dc.rights.none.fl_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución 3.0 España
https://creativecommons.org/licenses/by/3.0/es/
dc.rights.openaire.fl_str_mv info:eu-repo/semantics/openAccess
rights_invalid_str_mv open access
http://purl.org/coar/access_right/c_abf2
Atribución 3.0 España
https://creativecommons.org/licenses/by/3.0/es/
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.publisher.none.fl_str_mv Royal Society of Chemistry
publisher.none.fl_str_mv Royal Society of Chemistry
dc.source.none.fl_str_mv reponame:Docta Complutense
instname:Universidad Complutense de Madrid (UCM)
instname_str Universidad Complutense de Madrid (UCM)
reponame_str Docta Complutense
collection Docta Complutense
repository.name.fl_str_mv
repository.mail.fl_str_mv
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score 15.300719

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