Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAs
A detailed analysis of the photocapacitance signal at the near‐band and extrinsic energetic ranges in Schottky barriers obtained on horizontal Bridgman GaAs wafers, which were implanted with boron at different doses and annealed at several temperatures, has been carried out by using the optical isot...
| Autores: | , , , , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1986 |
| País: | España |
| Institución: | Universidad de Barcelona |
| Repositorio: | Dipòsit Digital de la UB |
| OAI Identifier: | oai:diposit.ub.edu:2445/32216 |
| Acceso en línea: | https://hdl.handle.net/2445/32216 |
| Access Level: | acceso abierto |
| Palabra clave: | Optoelectrònica Matèria condensada Optoelectronics Condensed matter |
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Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAsMorante i Lleonart, Joan RamonSamitier i Martí, JosepPérez Rodríguez, AlejandroAltelarrea Soria, HermenegildoGourrier, S.OptoelectrònicaMatèria condensadaOptoelectronicsCondensed matterA detailed analysis of the photocapacitance signal at the near‐band and extrinsic energetic ranges in Schottky barriers obtained on horizontal Bridgman GaAs wafers, which were implanted with boron at different doses and annealed at several temperatures, has been carried out by using the optical isothermal transient spectroscopy, OITS. The optical cross sections have been determined as well as the quenching efficiency of the EL2 level which has been found to be independent of the annealing temperature. Moreover, the quenching relaxation presents two significant features: (i) a strong increase of the quenching efficiency from 1.35 eV on and (ii) a diminution of the quenching transient amplitude in relation with that shown by the fundamental EL2 level. In order to explain this behavior, different cases are discussed assuming the presence of several energy levels, the existence of an optical recuperation, or the association of the EL2 trap with two levels located, respectively, at Ev+0.45 eV and Ec−0.75 eV. The theoretical simulation, taking into account these two last cases, is in agreement with the experimental photocapacitance data at low temperature, as well as at room temperature where the EL2 filling phototransient shows an anomalous behavior. Moreover, unlike the previous data reported for the EL2 electron optical cross section, the values found using our experimental technique are in agreement with the behavior deduced from the theoretical calculation. The utilization of the OITS method has also allowed the determination of another level, whose faster optical contribution is often added to that of the EL2 level when the DLOS or standard photocapacitance is used.American Institute of Physics1986info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionapplication/pdfhttps://hdl.handle.net/2445/32216Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)reponame:Dipòsit Digital de la UBinstname:Universidad de BarcelonaInglésReproducció del document publicat a: http://dx.doi.org/10.1063/1.337255Journal of Applied Physics, 1986, vol. 60, num. 5, p. 1661-1669http://dx.doi.org/10.1063/1.337255(c) American Institute of Physics , 1986info:eu-repo/semantics/openAccessoai:diposit.ub.edu:2445/322162026-05-27T06:46:51Z |
| dc.title.none.fl_str_mv |
Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAs |
| title |
Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAs |
| spellingShingle |
Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAs Morante i Lleonart, Joan Ramon Optoelectrònica Matèria condensada Optoelectronics Condensed matter |
| title_short |
Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAs |
| title_full |
Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAs |
| title_fullStr |
Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAs |
| title_full_unstemmed |
Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAs |
| title_sort |
Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron implanted GaAs |
| dc.creator.none.fl_str_mv |
Morante i Lleonart, Joan Ramon Samitier i Martí, Josep Pérez Rodríguez, Alejandro Altelarrea Soria, Hermenegildo Gourrier, S. |
| author |
Morante i Lleonart, Joan Ramon |
| author_facet |
Morante i Lleonart, Joan Ramon Samitier i Martí, Josep Pérez Rodríguez, Alejandro Altelarrea Soria, Hermenegildo Gourrier, S. |
| author_role |
author |
| author2 |
Samitier i Martí, Josep Pérez Rodríguez, Alejandro Altelarrea Soria, Hermenegildo Gourrier, S. |
| author2_role |
author author author author |
| dc.subject.none.fl_str_mv |
Optoelectrònica Matèria condensada Optoelectronics Condensed matter |
| topic |
Optoelectrònica Matèria condensada Optoelectronics Condensed matter |
| description |
A detailed analysis of the photocapacitance signal at the near‐band and extrinsic energetic ranges in Schottky barriers obtained on horizontal Bridgman GaAs wafers, which were implanted with boron at different doses and annealed at several temperatures, has been carried out by using the optical isothermal transient spectroscopy, OITS. The optical cross sections have been determined as well as the quenching efficiency of the EL2 level which has been found to be independent of the annealing temperature. Moreover, the quenching relaxation presents two significant features: (i) a strong increase of the quenching efficiency from 1.35 eV on and (ii) a diminution of the quenching transient amplitude in relation with that shown by the fundamental EL2 level. In order to explain this behavior, different cases are discussed assuming the presence of several energy levels, the existence of an optical recuperation, or the association of the EL2 trap with two levels located, respectively, at Ev+0.45 eV and Ec−0.75 eV. The theoretical simulation, taking into account these two last cases, is in agreement with the experimental photocapacitance data at low temperature, as well as at room temperature where the EL2 filling phototransient shows an anomalous behavior. Moreover, unlike the previous data reported for the EL2 electron optical cross section, the values found using our experimental technique are in agreement with the behavior deduced from the theoretical calculation. The utilization of the OITS method has also allowed the determination of another level, whose faster optical contribution is often added to that of the EL2 level when the DLOS or standard photocapacitance is used. |
| publishDate |
1986 |
| dc.date.none.fl_str_mv |
1986 |
| dc.type.none.fl_str_mv |
info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion |
| format |
article |
| status_str |
publishedVersion |
| dc.identifier.none.fl_str_mv |
https://hdl.handle.net/2445/32216 |
| url |
https://hdl.handle.net/2445/32216 |
| dc.language.none.fl_str_mv |
Inglés |
| language_invalid_str_mv |
Inglés |
| dc.relation.none.fl_str_mv |
Reproducció del document publicat a: http://dx.doi.org/10.1063/1.337255 Journal of Applied Physics, 1986, vol. 60, num. 5, p. 1661-1669 http://dx.doi.org/10.1063/1.337255 |
| dc.rights.none.fl_str_mv |
(c) American Institute of Physics , 1986 info:eu-repo/semantics/openAccess |
| rights_invalid_str_mv |
(c) American Institute of Physics , 1986 |
| eu_rights_str_mv |
openAccess |
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application/pdf |
| dc.publisher.none.fl_str_mv |
American Institute of Physics |
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American Institute of Physics |
| dc.source.none.fl_str_mv |
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica) reponame:Dipòsit Digital de la UB instname:Universidad de Barcelona |
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Universidad de Barcelona |
| reponame_str |
Dipòsit Digital de la UB |
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Dipòsit Digital de la UB |
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|
| repository.mail.fl_str_mv |
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1869413365160345601 |
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15.301603 |