Study of high In-content AlInN deposition on p-Si (111) by RF-sputtering
In this work, we investigate the effects of deposition conditions on the structural and morphological properties of AlInN thin films deposited on p-doped Si(111) substrates by reactive radio-frequency sputtering. The aluminum composition can be tuned in the 0 to 0.36 range by changing the power appl...
| Autores: | , , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2016 |
| País: | España |
| Recursos: | Universidad de Alcalá (UAH) |
| Repositorio: | e_Buah Biblioteca Digital Universidad de Alcalá |
| Idioma: | inglés |
| OAI Identifier: | oai:ebuah.uah.es:10017/26420 |
| Acesso em linha: | http://hdl.handle.net/10017/26420 https://dx.doi.org/10.7567/JJAP.55.05FB07 |
| Access Level: | acceso abierto |
| Palavra-chave: | Aluminum Sputtering Surface roughness Al incorporation Aluminum composition Deposition conditions Layer morphology Reactive radio frequency sputtering Room-temperature photoluminescence Si(111) substrate Structural and morphological properties Ciencias tecnológicas Electrónica Technology Electronics |
| Resumo: | In this work, we investigate the effects of deposition conditions on the structural and morphological properties of AlInN thin films deposited on p-doped Si(111) substrates by reactive radio-frequency sputtering. The aluminum composition can be tuned in the 0 to 0.36 range by changing the power applied to the aluminum target. Al incorporation leads to a change in the layer morphology and improvement of the rms surface roughness of the layers. The compact Al0.36In0.64N sample grown at 550 °C exhibits intense room-temperature photoluminescence centered at 1.75 eV. |
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